scholarly journals Gate-tunable gas sensing behaviors in air-stable ambipolar organic thin-film transistors

RSC Advances ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 1910-1916 ◽  
Author(s):  
Hyunah Kwon ◽  
Hocheon Yoo ◽  
Masahiro Nakano ◽  
Kazuo Takimiya ◽  
Jae-Joon Kim ◽  
...  

Ambipolar organic field effect transistor shows a great potential to be used for multi-gas sensing device utilizing gate-tunable gas sensing behaviors.

CrystEngComm ◽  
2021 ◽  
Author(s):  
Tommaso Salzillo ◽  
Francesco D'Amico ◽  
Nieves Montes ◽  
Raphael Pfattner ◽  
Marta Mas-Torrent

The presented work concerns the study of solution sheared organic thin film transistors based on a 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES-ADT) polymer blend.


2014 ◽  
Vol 104 (23) ◽  
pp. 233306 ◽  
Author(s):  
Kenji Kotsuki ◽  
Hiroshige Tanaka ◽  
Seiji Obata ◽  
Sven Stauss ◽  
Kazuo Terashima ◽  
...  

Nanoscale ◽  
2018 ◽  
Vol 10 (8) ◽  
pp. 3613-3620 ◽  
Author(s):  
Nan Cui ◽  
Hang Ren ◽  
Qingxin Tang ◽  
Xiaoli Zhao ◽  
Yanhong Tong ◽  
...  

A fully transparent conformal organic thin-film field-effect transistor array is obtained based on an ultrathin embedded metal-grid electrode and a solution-processed C8-BTBT film.


2012 ◽  
Vol 1435 ◽  
Author(s):  
S. Gupta ◽  
K. C. Chinnam ◽  
M. Zelzer ◽  
R. Ulijn ◽  
H. Gleskova

ABSTRACTWe have studied the effect of pentacene purity and evaporation rate on low-voltage organic thin-film transistors (OTFTs) prepared solely by dry fabrication techniques. The maximum field-effect mobility of 0.07 cm2/Vs was achieved for the highest pentacene evaporation rate of 0.32 Å/s and four-time purified pentacene. Four-time purified pentacene also led to the lowest threshold voltage of -1.1 V and inverse subthreshold slope of ∼100 mV/decade. In addition, pentacene surface was imaged using atomic force microscopy, and the transistor channel and contact resistances for various pentacene evaporation rates were extracted and compared to field-effect mobilities.


2006 ◽  
Vol 35 (1) ◽  
pp. 20-21 ◽  
Author(s):  
Tomohiro Koyanagi ◽  
Masanori Muratsubaki ◽  
Yoshinobu Hosoi ◽  
Takanori Shibata ◽  
Ken Tsutsui ◽  
...  

1999 ◽  
Vol 558 ◽  
Author(s):  
C.D. Sheraw ◽  
D.J. Gundlach ◽  
T.N. Jackson

ABSTRACTWe have investigated the polymeric insulators benzocyclobutene (BCB), parylene C and polyimide for use as gate dielectrics in pentacene organic thin film transistors (TFTs). Atomic force microscopy (AFM) was used to examine the surface roughness of the polymeric dielectrics and the morphology of pentacene films deposited onto them. X-ray diffraction was used to examine the molecular ordering of pentacene films deposited onto the polymeric dielectrics. We find a correlation between the surface roughness of the gate dielectric and the grain size in deposited pentacene films, with smooth surfaces yielding larger, more dendritic grains. Despite significant changes in film morphology, pentacene TFTs using BCB, parylene C, or polyimide as the gate dielectric have performance comparable to devices using SiO2 as the gate dielectric. These results suggest that there is not a strong correlation between pentacene film grain size and field-effect mobility for these devices. Pentacene TFTs using BCB as the gate dielectric had field-effect mobility as high as 0.7 cm2/V-s, on/off ratio > 107, subthreshold slope less than 2 V/decade, and negative threshold voltage, making them an attractive candidate for use in organic-based large-area electronic applications on flexible substrates.


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