scholarly journals Thermal effect of annealing-temperature on solution-processed high-k ZrO2 dielectrics

RSC Advances ◽  
2019 ◽  
Vol 9 (72) ◽  
pp. 42415-42422 ◽  
Author(s):  
Shangxiong Zhou ◽  
Jianhua Zhang ◽  
Zhiqiang Fang ◽  
Honglong Ning ◽  
Wei Cai ◽  
...  
Keyword(s):  
Thermal Effect ◽  
Spin Coating ◽  
Zirconium Oxide ◽  
Annealing Temperature ◽  
Solution Processed ◽  
Annealing Temperatures ◽  
Post Annealing ◽  
High K

In this paper, a solution-processed zirconium oxide (ZrO2) dielectric was deposited by spin coating with varying pre-annealing temperatures and post-annealing temperatures.

Electrical Properties of Nanostructured Titanium Dioxide Thin Films Prepared by Sol-Gel Spin-Coating Method

2011 ◽  
Vol 312-315 ◽  
pp. 1027-1031
Author(s):  
Mohd Noor Asiah ◽  
Mat Zain Basri ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Electrical Properties ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Tio2 Thin Films ◽  
Nanostructured Titanium ◽  
Annealing Temperatures ◽  
Vis Spectroscopy

This paper investigated the electrical properties of nanostructured Titanium Dioxide (TiO2) thin films prepared by the sol-gel method at different annealing temperatures. The precursor used was Titanium (IV) butoxide at concentration of 0.4 M. The TiO2 thin films were deposited on the glass and silicon substrates by using the spin coating technique. The influence of annealing temperatures on the electrical, structural, surface morphology and optical properties of the films were characterized by I-V measurement, X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and UV-Vis Spectroscopy, respectively. It was found that the electrical properties of TiO2¬ thin films were changed due to the changes of annealing temperatures. As the annealing temperatures rises, the resistivity of the film found to be decreased. The result also shows that films which does not applied annealing temperature called as deposited were found to be amorphous while the films with annealing temperature T = 350oC and above became crystalline structure. The anatase phase can be obtained at annealing temperatures from T = 350oC up to T = 500oC.

Influences of Stirring Speed and Post Annealing Temperature on the Properties of Zinc Oxide Colloid Prepared by Sol-Gel Spin Coating Method

2016 ◽  
Vol 701 ◽  
pp. 159-163 ◽  
Author(s):  
Sheen Jeff Teh ◽  
Yew Keong Sin ◽  
Kah Yoong Chan ◽  
Nisha Kumari Devaraj
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Low Cost ◽  
Sol Gel ◽  
Structural And Optical Properties ◽  
Post Annealing ◽  
Wide Range ◽  
Post Annealing Temperature

Zinc oxide (ZnO) colloid has drawn significant attention recently due to its wide range of potential applications such as photonic crystals, solar cells, sensors, and other optical devices. In this work, low cost sol-gel spin coating technique was employed to synthesis ZnO colloid. The influences of stirring speed and post annealing temperature on the properties of ZnO colloid was investigated. The structural and optical properties of ZnO colloid was characterized using field-emission scanning electron microscopy (FESEM) and ultraviolet-visible (UV-Vis) spectrophotometer, respectively. Subsequently, Tauc method was used to estimate the optical band gap of the ZnO colloid based on the optical transmittance data. The effects of the stirring speed and post annealing temperature on the structural and optical properties of ZnO colloid are revealed and discussed in this paper. It was found that ZnO colloid prepared by the stirring speed of 500rpm and 400°C post annealing temperature demonstrates the best dispersity quality of colloid system.

Temperature Effect on Structural and Optical Characteristics of Solution-processed Polytriarylamine (PTAA) Thin Films for Optoelectronic Applications

2021 ◽  
Vol 16 ◽  
pp. 1-6
Author(s):  
ABDUL ISMAIL ABDUL RANI ◽  
Muhammad Afif Abd Rani ◽  
Samat Iderus ◽  
Mohd Shahril Osman ◽  
Norjannah Yusop ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Low Cost ◽  
Xrd Analysis ◽  
Band Gap Energy ◽  
Green Technology ◽  
Solution Processed ◽  
Coating Method

Polytriarylamine (PTAA) is a promising yet trending organic semiconductor material in which has unique characteristics that are low-cost fabrication, flexible and stable in room condition. The unique characteristic of PTAA thin films have attracted researchers to explore more on its ability as future green technology solutions. In this works, the effect of annealing temperature towards PTAA thin films are focused. PTAA thin films is fabricated by solution processed technique and sintered onto the glass substrate by spin coating method. The spin coating speed are 1000 RPM to 5000 RPM. The PTAA thin films are further annealed for an hour with temperatures of 80 oC, 120 oC and 150 oC. It is shown that grain size of thin films are increasing as the temperature increased based on XRD analysis. As for 1000 to 5000 RPM, the highest grain size obtain are 26.46 nm, 31.34 nm, 37.19 nm, 39.96 nm and 42.72 nm, respectively. Optical characteristic also reveals that band gap energy value is perpendicular to the increasing in temperature obtain from the UV-Vis spectrum. The results strongly show that annealing temperature had significantly affected both structural and optical properties of PTAA thin films.

Effect of post-annealing temperature on the dielectric function of solution-processed LaAlO x /Si Films

2014 ◽  
Vol 64 (10) ◽  
pp. 1509-1513
Author(s):  
Tae Jung Kim ◽  
Jae Chan Park ◽  
Soon Yong Hwang ◽  
Jun Seok Byun ◽  
Han Gyeol Park ◽  
...  
Keyword(s):  
Dielectric Function ◽  
Annealing Temperature ◽  
Solution Processed ◽  
Post Annealing ◽  
Si Films ◽  
Post Annealing Temperature

scholarly journals Phase transformation in tungsten oxide nanoplates as a function of post-annealing temperature and its electrochemical influence on energy storage

2020 ◽  
Vol 2 (10) ◽  
pp. 4689-4701 ◽  
Author(s):  
Shobhnath P. Gupta ◽  
Harishchandra H. Nishad ◽  
Sanjay D. Chakane ◽  
Suresh W. Gosavi ◽  
Dattatray J. Late ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Phase Transformation ◽  
Energy Storage ◽  
Electrochemical Performance ◽  
Tungsten Oxide ◽  
Annealing Temperature ◽  
Schematic Representation ◽  
Annealing Temperatures ◽  
Post Annealing ◽  
Post Annealing Temperature

The schematic representation exhibits phase transformation of WO3 nanoplates at various annealing temperatures confirmed by XRD and Raman spectra. The superior electrochemical performance is achieved by the mixed phase WO3 crystal structure.

scholarly journals Influence of the Curing and Annealing Temperatures on the Properties of Solution Processed Tin Oxide Thin Films

Crystals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 851
Author(s):  
Christophe Avis ◽  
Jin Jang
Keyword(s):  
Grain Size ◽  
Carrier Concentration ◽  
Tin Oxide ◽  
Annealing Temperature ◽  
Optical Transmittance ◽  
Curing Temperature ◽  
Electrical And Optical Properties ◽  
Solution Processed ◽  
Annealing Temperatures ◽  
Grain Sizes

We report the effect of the curing (Tcuring) and annealing (Tanneal) temperatures on the structural, electrical, and optical properties of solution processed tin oxide. Tanneal was varied from 300 to 500 °C, and Tcuring from 200 °C to Tanneal. All Tanneal lead to a polycrystalline phase, but the amorphous phase was observed at Tanneal = 300 °C and Tcuring ranging from 250 to 300 °C. This could be explained by the melting point of the precursor (SnCl2), occurring at 250 °C. The crystallinity can be effectively controlled by the annealing temperature, but the curing temperature dramatically affects the grain size. We can reach grain sizes from 5–10 nm (Tcuring = 200 °C and Tanneal = 300 °C) to 30–50 nm (Tcuring = 500 °C and Tanneal = 500 °C). At a fixed Tanneal, Hall mobilities, carrier concentration, and conductivity increased with the curing temperature. The Hall mobility was in the range of 1 to 9.4 cm2/Vs, the carrier concentration was 1018 to 1019 cm−3, and the conductivity could reach ~20 S/cm when the grain size was 30–50 nm. The optical transmittance, the optical bandgap, the refractive index, and the extinction coefficient were also analyzed and they show a correlation with the annealing process.

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

2014 ◽  
Vol 806 ◽  
pp. 57-60
Author(s):  
Nicolas Thierry-Jebali ◽  
Arthur Vo-Ha ◽  
Davy Carole ◽  
Mihai Lazar ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Process Condition ◽  
Specific Contact Resistance ◽  
High Doping Level ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
P Type

This work reports on the improvement of ohmic contacts made on heavily p-type doped 4H-SiC epitaxial layer selectively grown by Vapor-Liquid-Solid (VLS) transport. Even before any annealing process, the contact is ohmic. This behavior can be explained by the high doping level of the VLS layer (Al concentration > 1020 cm-3) as characterized by SIMS profiling. Upon variation of annealing temperatures, a minimum value of the Specific Contact Resistance (SCR) down to 1.3x10-6 Ω.cm2 has been obtained for both 500 °C and 800 °C annealing temperature. However, a large variation of the SCR was observed for a same process condition. This variation is mainly attributed to a variation of the Schottky Barrier Height.

Conductivity of solution-processed films of a metal-free chlorophyll derivative: drop casting vs. spin coating

2021 ◽  
Author(s):  
Andrey I. Koptyaev ◽  
Vlad V. Travkin ◽  
Yury I. Sachkov ◽  
Yuliya V. Romanenko ◽  
Georgy L. Pakhomov
Keyword(s):  
Spin Coating ◽  
Solution Processed ◽  
Metal Free ◽  
Chlorophyll Derivative
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