scholarly journals Barrier thickness dependence of MgxZn1−xO/ZnO quantum well (QW) on the performance of a p-NiO/QW/n-ZnO photodiode

RSC Advances ◽  
2019 ◽  
Vol 9 (51) ◽  
pp. 29967-29972
Author(s):  
Jun Dar Hwang ◽  
Jhong Yung Jiang

An MgxZn1−xO/ZnO quantum well (QW) structure, with various barrier (MgxZn1−xO layer) thicknesses, was inserted into p-NiO/n-ZnO heterojunction photodiodes (HPDs) by using a radio-frequency magnetron sputtering system.

2013 ◽  
Vol 795 ◽  
pp. 721-725 ◽  
Author(s):  
Fatima Aldaw Idrees ◽  
Samsudi Sakrani ◽  
Zulkafli Othaman

In this paper self-assembled silicon nanodots have been grown on silicon substrate using radio-frequency magnetron sputtering system. This system were settled at varying experimental conditions such as substrate temperature, time of deposition, RF power and fixed argon flow rate. Then the surface roughness was measured by AFM which resulted average dots size of 113 nm. However, the presence of a small amount of grain atoms formed on the surface was confirmed using SEM measurement. The crystalline Si-NDs with (100) plane contributed sharp diffraction peak located at 69.5° was confirmed using XRD measurement. These results of Si-NDs structural properties support the possible growth technique of radio-frequency magnetron sputtering.


2004 ◽  
Vol 95 (12) ◽  
pp. 7611-7618 ◽  
Author(s):  
A. Palmero ◽  
E. D. van Hattum ◽  
W. M. Arnoldbik ◽  
A. M. Vredenberg ◽  
F. H. P. M. Habraken

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