Approaching subthreshold-swing limit for thin-film transistors by using a giant-dielectric-constant gate dielectric
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Low-temperature giant-dielectric-constant thin films (In0.0025Nb0.0025Ti0.995O2) fabricated with RF sputtering are employed as the dielectrics for IZO-TFTs.
2010 ◽
Vol 13
(9)
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pp. H313
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2010 ◽
Vol 8
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pp. 012005
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2015 ◽
Vol 25
(17)
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pp. 2564-2572
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2016 ◽
Vol 4
(10)
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pp. 2072-2078
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2013 ◽
Vol 1
(5)
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pp. 967-976
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2021 ◽