Surface-dominated transport and enhanced thermoelectric figure of merit in topological insulator Bi1.5Sb0.5Te1.7Se1.3

Nanoscale ◽  
2015 ◽  
Vol 7 (2) ◽  
pp. 518-523 ◽  
Author(s):  
Te-Chih Hsiung ◽  
Chung-Yu Mou ◽  
Ting-Kuo Lee ◽  
Yang-Yuan Chen
Keyword(s):  
Topological Insulator ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Bulk Specimen ◽  
Thermoelectric Transport ◽  
Transport Measurements

Thermoelectric transport measurements of topological insulator Bi1.5Sb0.5Te1.7Se1.3 nanowires reveal an enhancement of the thermoelectric figure of merit as compared with the bulk specimen.

Enhanced thermoelectric transport properties of n-type InSe due to the emergence of the flat band by Si doping

2019 ◽  
Vol 6 (6) ◽  
pp. 1475-1481 ◽  
Author(s):  
Kyu Hyoung Lee ◽  
Min-Wook Oh ◽  
Hyun-Sik Kim ◽  
Weon Ho Shin ◽  
Kimoon Lee ◽  
...  
Keyword(s):  
Transport Properties ◽  
Figure Of Merit ◽  
Flat Band ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Thermoelectric Transport ◽  
Si Doping ◽  
Thermoelectric Transport Properties ◽  
Si Doped

An improved thermoelectric figure of merit (zT) of 0.14 at 795 K was obtained in 7% Si doped InSe due to the emergence of the flat band.

Thermoelectric Transport in Superlattices

1997 ◽  
Vol 478 ◽  
Author(s):  
T. L. Reinecke ◽  
D. A. Broido
Keyword(s):  
Exact Solution ◽  
Figure Of Merit ◽  
Phonon Scattering ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Thermoelectric Transport ◽  
Barrier Layers ◽  
Thermoelectric Transport Properties ◽  
Carrier Tunneling

AbstractThe thermoelectric transport properties of superlattices have been studied using an exact solution of the Boltzmann equation. The role of heat transport along the barrier layers, of carrier tunneling through the barriers, of valley degeneracy and of the well width and energy dependences of the carrier-phonon scattering rates on the thermoelectric figure of merit are given. Calculations are given for Bi2Te3 and for PbTe, and the results of recent experiments are discussed.

Crystal chemistry and thermoelectric transport of layered AM2X2compounds

2018 ◽  
Vol 5 (8) ◽  
pp. 1744-1759 ◽  
Author(s):  
Wanyue Peng ◽  
Sevan Chanakian ◽  
Alexandra Zevalkink
Keyword(s):  
Transport Properties ◽  
Crystal Chemistry ◽  
Figure Of Merit ◽  
Chemical Diversity ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Thermoelectric Transport

This review highlights the chemical diversity and transport properties of AM2X2Zintl compounds and strategies to achieve a high thermoelectric figure of merit.

scholarly journals Measuring thermoelectric transport properties of materials

2015 ◽  
Vol 8 (2) ◽  
pp. 423-435 ◽  
Author(s):  
Kasper A. Borup ◽  
Johannes de Boor ◽  
Heng Wang ◽  
Fivos Drymiotis ◽  
Franck Gascoin ◽  
...  
Keyword(s):  
Transport Properties ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Thermoelectric Transport ◽  
Thermoelectric Transport Properties ◽  
The Common ◽  
Properties Of Materials

In this review we discuss considerations regarding the common techniques used for measuring thermoelectric transport properties necessary for calculating the thermoelectric figure of merit, zT.

Extraordinary thermoelectric performance of NaBaBi with degenerate and highly non-parabolic bands compared to LiBaSb and Bi2Te3

2021 ◽  
Author(s):  
Enamul Haque
Keyword(s):  
Fermi Level ◽  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure

This article reports the extraordinary thermoelectric figure of merit (ZT) of NaBaBi: degenerate bands, instead of the valley degeneracy of Bi2Te3, highly non-parabolic bands, and low DOS near the Fermi level of NaBaBi lead to an extraordinary ZTisotropic ≈ 1.60 at 350 K.

Influence of multi-sintering on the thermoelectric properties of Bi2Sr2Co2Oy ceramics

2019 ◽  
Vol 34 (02) ◽  
pp. 2050019 ◽  
Author(s):  
Y. Zhang ◽  
M. M. Fan ◽  
C. C. Ruan ◽  
Y. W. Zhang ◽  
X.-J. Li ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Phonon Scattering ◽  
Sintered Sample ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
The Third ◽  
Ceramic Samples ◽  
Optimum Formula

[Formula: see text] ceramic samples have a structure similar to phonon glass electronic crystals, and their thermoelectric properties can be effectively adjusted through repeated grinding and sintering. The results show that multi-sintering can make their grain refined and increase their grain boundary, which will effectively increase density and phonon scattering. Finally, multi-sintering can reduce the resistivity and thermal conductivity, thus obviously improve thermoelectric figure of merit [Formula: see text] of [Formula: see text]. The optimum [Formula: see text] value of 0.26 is achieved at 923 K by the third sintered sample.

A strategy for boosting the thermoelectric performance of famatinite Cu3SbS4

2020 ◽  
Vol 22 (4) ◽  
pp. 2081-2086 ◽  
Author(s):  
Taiki Tanishita ◽  
Koichiro Suekuni ◽  
Hirotaka Nishiate ◽  
Chul-Ho Lee ◽  
Michitaka Ohtaki
Keyword(s):  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Co Substitution

Co-substitution of Ge and P for Sb in Cu3SbS4 famatinite boosted dimensionless thermoelectric figure of merit.

Thermoelectric Properties of n-Type 90% Bi2Te3+10%Bi2Se3 Thermoelectric Materials Produced by Melt Spinning Method and Sintering

2007 ◽  
Vol 534-536 ◽  
pp. 161-164 ◽  
Author(s):  
Taek Soo Kim ◽  
Byong Sun Chun
Keyword(s):  
Solid Solutions ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Melt Spinning ◽  
Bending Strength ◽  
Sintering Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Vacuum Sintering ◽  
Thermoelectric Figure ◽  
Sintering Processes

N-type Bi2Te3-Sb2Te3 solid solutions doped with CdCl2 was prepared by melt spinning, crushing and vacuum sintering processes. Microstructure, bending strength and thermoelectric property were investigated as a function of the doping quantity from 0.03wt.% to 0.10wt.% and sintering temperature from 400oC to 500oC, and finally compared with those of conventionally fabricated alloys. The alloy showed a good structural homogeneity as well as bending strength of 3.88Kgf/mm2. The highest thermoelectric figure of merit was obtained by doping 0.03wt.% and sintering at 500oC.

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