Contact engineering of single core/shell SiC/SiO2 nanowire memory unit with high current tolerance using focused femtosecond laser irradiation
Keyword(s):
Single nanowire memory unit is developed with precise contact engineering on metal–oxide–semiconductor heterojunction by using the localized plasmonic effects.
1993 ◽
Vol 32
(Part 2, No. 7B)
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pp. L967-L970
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Keyword(s):
1998 ◽
Vol 37
(Part 1, No. 10)
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pp. 5503-5506
2012 ◽
Vol 51
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pp. 090111
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2012 ◽
Vol 51
(9R)
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pp. 090111
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2003 ◽
Vol 42
(Part 1, No. 6A)
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pp. 3377-3378
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