Femtosecond Laser Irradiation-Mediated MoS2–Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors

2021 ◽  
Author(s):  
Jinpeng Huo ◽  
Yu Xiao ◽  
Tianming Sun ◽  
Guisheng Zou ◽  
Daozhi Shen ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Laser Irradiation ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Femtosecond Laser Irradiation ◽  
Metal Contact ◽  
Contact Engineering

Contact engineering of single core/shell SiC/SiO2 nanowire memory unit with high current tolerance using focused femtosecond laser irradiation

Nanoscale ◽  
2020 ◽  
Vol 12 (9) ◽  
pp. 5618-5626
Author(s):  
Luchan Lin ◽  
Jinpeng Huo ◽  
Peng Peng ◽  
Guisheng Zou ◽  
Lei Liu ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Metal Oxide ◽  
Laser Irradiation ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Femtosecond Laser Irradiation ◽  
Core Shell ◽  
Memory Unit ◽  
High Current ◽  
Contact Engineering

Single nanowire memory unit is developed with precise contact engineering on metal–oxide–semiconductor heterojunction by using the localized plasmonic effects.

Generation of nano-bumps on transparent quartz glass surface under femtosecond laser irradiation

2008 ◽  
Author(s):  
Wei Guo ◽  
Zeng Bo Wang ◽  
Lin Li ◽  
Zhu Liu ◽  
Boris Luk’yanchuk ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Laser Irradiation ◽  
Quartz Glass ◽  
Glass Surface ◽  
Femtosecond Laser Irradiation

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

scholarly journals Condensation of Si-rich region inside soda-lime glass by parallel femtosecond laser irradiation

2014 ◽  
Vol 22 (13) ◽  
pp. 16493 ◽  
Author(s):  
Masaaki Sakakura ◽  
Kouhei Yoshimura ◽  
Torataro Kurita ◽  
Masahiro Shimizu ◽  
Yasuhiko Shimotsuma ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Laser Irradiation ◽  
Soda Lime ◽  
Femtosecond Laser Irradiation ◽  
Soda Lime Glass ◽  
Rich Region

scholarly journals Three- and four-photon excited upconversion luminescence in terbium doped lutetium silicate powders by femtosecond laser irradiation

2013 ◽  
Vol 3 (11) ◽  
pp. 1803 ◽  
Author(s):  
Nikifor Rakov ◽  
Whualkuer Lozano B. ◽  
Edilson L. Falcão-filho ◽  
Renato B. Guimarães ◽  
Glauco S. Maciel ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Laser Irradiation ◽  
Upconversion Luminescence ◽  
Femtosecond Laser Irradiation

scholarly journals Photo-initiation of ZnO nanorod formation by femtosecond laser irradiation

2010 ◽  
Vol 118 (1374) ◽  
pp. 147-151 ◽  
Author(s):  
Nan WU ◽  
Yasuhiko SHIMOTSUMA ◽  
Masayuki NISHI ◽  
Masaaki SAKAKURA ◽  
Kiyotaka MIURA ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Laser Irradiation ◽  
Femtosecond Laser Irradiation ◽  
Zno Nanorod
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