Monovalent sulfur oxoanions enable millimeter-long single-crystalline h-WO3 nanowire synthesis

Nanoscale ◽  
2020 ◽  
Vol 12 (16) ◽  
pp. 9058-9066 ◽  
Author(s):  
Guozhu Zhang ◽  
Chen Wang ◽  
Wataru Mizukami ◽  
Takuro Hosomi ◽  
Kazuki Nagashima ◽  
...  
Keyword(s):  
Nanowire Growth ◽  
Single Crystalline ◽  
Nanowire Synthesis

Monovalent sulfur oxoanions (HSO4− and CH3SO3−), rather than the previously proposed SO42−, significantly promote the anisotropic nanowire growth of hexagonal WO3.

Single-crystalline CuO nanowire growth and its electrode-dependent resistive switching characteristics

2013 ◽  
Vol 114 (4) ◽  
pp. 043514 ◽  
Author(s):  
Deok-kee Kim ◽  
Jeong Ho Shin ◽  
Ho Sun Shin ◽  
Jae Yong Song
Keyword(s):  
Resistive Switching ◽  
Nanowire Growth ◽  
Single Crystalline ◽  
Cuo Nanowire ◽  
Switching Characteristics

Characterization of single-crystalline PbTiO3 nanowire growth via surfactant-free hydrothermal method

2007 ◽  
Vol 101 (2) ◽  
pp. 024319 ◽  
Author(s):  
Haoshuang Gu ◽  
Yongming Hu ◽  
Jing You ◽  
Zhenglong Hu ◽  
Ying Yuan ◽  
...  
Keyword(s):  
Hydrothermal Method ◽  
Nanowire Growth ◽  
Single Crystalline

scholarly journals Controlled growth of single-crystalline metal nanowires via thermomigration across a nanoscale junction

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
De-Gang Xie ◽  
Zhi-Yu Nie ◽  
Shuhei Shinzato ◽  
Yue-Qing Yang ◽  
Feng-Xian Liu ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Gradient ◽  
Morphological Changes ◽  
Back Stress ◽  
Solid Substrate ◽  
Metal Nanowires ◽  
Nanowire Growth ◽  
Single Crystalline ◽  
Czochralski Crystal Growth ◽  
Crystalline Metal

Abstract Mass transport driven by temperature gradient is commonly seen in fluids. However, here we demonstrate that when drawing a cold nano-tip off a hot solid substrate, thermomigration can be so rampant that it can be exploited for producing single-crystalline aluminum, copper, silver and tin nanowires. This demonstrates that in nanoscale objects, solids can mimic liquids in rapid morphological changes, by virtue of fast surface diffusion across short distances. During uniform growth, a thin neck-shaped ligament containing a grain boundary (GB) usually forms between the hot and the cold ends, sustaining an extremely high temperature gradient that should have driven even larger mass flux, if not counteracted by the relative sluggishness of plating into the GB and the resulting back stress. This GB-containing ligament is quite robust and can adapt to varying drawing directions and velocities, imparting good controllability to the nanowire growth in a manner akin to Czochralski crystal growth.

Single-crystalline hafnium carbide nanowire growth below the eutectic temperature by CVD

2013 ◽  
Vol 384 ◽  
pp. 44-49 ◽  
Author(s):  
Song Tian ◽  
Hejun Li ◽  
Yulei Zhang ◽  
Shouyang Zhang ◽  
Yongjie Wang ◽  
...  
Keyword(s):  
Eutectic Temperature ◽  
Nanowire Growth ◽  
Hafnium Carbide ◽  
Single Crystalline

A one-step chemical vapor deposition approach for solid solution PrxNd1−xB6 nanowire growth

RSC Advances ◽  
2015 ◽  
Vol 5 (117) ◽  
pp. 96412-96415
Author(s):  
Qidong Li ◽  
Yanming Zhao ◽  
Qinghua Fan ◽  
Wei Han
Keyword(s):  
Solid Solution ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Crystalline Solid ◽  
Nanowire Growth ◽  
Single Crystalline ◽  
One Step ◽  
First Time

Structurally uniform and well-doped single crystalline solid solution PrxNd1−xB6 nanowires were fabricated by a one-step CVD approach for the first time.

Mechanistic Evaluation of Single-Crystalline Aluminum Nitride Nanowire Synthesis from Plastic Waste

2021 ◽  
Vol 9 (5) ◽  
pp. 2291-2299
Author(s):  
Songyan Yin ◽  
Yu Wang ◽  
Charlie Kong ◽  
Bin Gong ◽  
Christopher E. Marjo ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Plastic Waste ◽  
Single Crystalline ◽  
Nanowire Synthesis

“Preparation of Single Crystalline Gold Films for ED Studies”

1972 ◽  
Vol 30 ◽  
pp. 634-635
Author(s):  
Joseph D. C. Peng
Keyword(s):  
Crystal Morphology ◽  
Diffraction Theory ◽  
Scattering Matrix ◽  
Vacuum Evaporation ◽  
Gold Films ◽  
Matrix Formulation ◽  
Silver Films ◽  
Single Crystalline ◽  
Grating Pattern ◽  
Stacking Disorder

The relative intensities of the ED spots in a cross-grating pattern can be calculated using N-beam electron diffraction theory. The scattering matrix formulation of N-beam ED theory has been previously applied to imperfect microcrystals of gold containing stacking disorder (coherent twinning) in the (111) crystal plane. In the present experiment an effort has been made to grow single-crystalline, defect-free (111) gold films of a uniform and accurately know thickness using vacuum evaporation techniques. These represent stringent conditions to be met experimentally; however, if a meaningful comparison is to be made between theory and experiment, these factors must be carefully controlled. It is well-known that crystal morphology, perfection, and orientation each have pronounced effects on relative intensities in single crystals.The double evaporation method first suggested by Pashley was employed with some modifications. Oriented silver films of a thickness of about 1500Å were first grown by vacuum evaporation on freshly cleaved mica, with the substrate temperature at 285° C during evaporation with the deposition rate at 500-800Å/sec.

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Synthesis of Jumbo-size Single Crystalline Bi$lt;inf$gt;2$lt;/inf$gt;Se$lt;inf$gt;3$lt;/inf$gt; Nanoplates and Nanoribbons by Vapor Transportation

2014 ◽  
Vol 29 (11) ◽  
pp. 1199
Author(s):  
LI Xiao-Shuai ◽  
WANG Zeng-Mei ◽  
ZHU Ming-Fang ◽  
WANG Shan-Peng ◽  
TAO Xu-Tang ◽  
...  
Keyword(s):  
Single Crystalline

Formation of Large, Orientation-Controlled, Nearly Single Crystalline Si Thin Films on SiO2 Using Contact Printing of Rolled and Annealed Nickel Tapes

2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Amorphous Silicon ◽  
Tem Analysis ◽  
Contact Printing ◽  
Single Crystalline ◽  
High Resolution Tem ◽  
Lateral Crystallization ◽  
Si Films

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)

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