A new family of two-dimensional ferroelastic semiconductors with negative Poisson's ratios

Nanoscale ◽  
2020 ◽  
Vol 12 (26) ◽  
pp. 14150-14159
Author(s):  
Jun-Hui Yuan ◽  
Ge-Qi Mao ◽  
Kan-Hao Xue ◽  
Jiafu Wang ◽  
Xiang-Shui Miao

Two-dimensional (2D) materials with both ferroelasticity and negative Poisson's ratios have attracted intensive interest, but it is very rare to have both ferroelasticity and negative Poisson's ratios in a single material.

Author(s):  
Xiaodong Lv ◽  
Linke Yu ◽  
Fengyu Li ◽  
Jian Gong ◽  
Yong He ◽  
...  

Seeking novel materials with specific applications is always an attractive theme in developing two-dimensional (2D) materials. Here 10 2D pentagonal transition metal dichalcogenids are identified with high stability and their promising applications.


2017 ◽  
Author(s):  
Varun Bheemireddy

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>


2021 ◽  
Author(s):  
Xikui Ma ◽  
Jian Liu ◽  
Yingcai Fan ◽  
Weifeng Li ◽  
Jifan Hu ◽  
...  

Two-dimensional (2D) auxetic materials with exceptional negative Poisson’s ratios (NPR) are drawing increasing interest due to the potentials in medicine, fasteners, tougher composites and many other applications. Improving the auxetic...


2018 ◽  
Vol 9 ◽  
pp. 1247-1253 ◽  
Author(s):  
Sri Kasi Matta ◽  
Chunmei Zhang ◽  
Yalong Jiao ◽  
Anthony O'Mullane ◽  
Aijun Du

The properties of bulk compounds required to be suitable for photovoltaic applications, such as excellent visible light absorption, favorable exciton formation, and charge separation are equally essential for two-dimensional (2D) materials. Here, we systematically study 2D group IV–V compounds such as SiAs2 and GeAs2 with regard to their structural, electronic and optical properties using density functional theory (DFT), hybrid functional and Bethe–Salpeter equation (BSE) approaches. We find that the exfoliation of single-layer SiAs2 and GeAs2 is highly feasible and in principle could be carried out experimentally by mechanical cleavage due to the dynamic stability of the compounds, which is inferred by analyzing their vibrational normal mode. SiAs2 and GeAs2 monolayers possess a bandgap of 1.91 and 1.64 eV, respectively, which is excellent for sunlight harvesting, while the exciton binding energy is found to be 0.25 and 0.14 eV, respectively. Furthermore, band-gap tuning is also possible by application of tensile strain. Our results highlight a new family of 2D materials with great potential for solar cell applications.


Author(s):  
Qingwen Lan ◽  
Changpeng Chen

Two-dimensional ferroelastic materials and two-dimensional materials with negative Poisson’s ratios have attracted great interest. Here, using first-principles calculations, we reveal the materials—monolayer YbX (X=S, Se, Te) that harbors both ferroelasticity...


2007 ◽  
Vol 334-335 ◽  
pp. 157-160
Author(s):  
Hui Wan ◽  
Zhen Yu Hu ◽  
Wu Jun Bao ◽  
Guo Ming Hu

This study deals with the in-plane Young’s moduli of two-dimensional auxetic cellular materials with negative Poisson’s ratios. The in-plane Young’s moduli of these cellular materials are theoretically analyzed, and calculated from the cell member bending with large deflection. Expressions for the in-plane Young’s moduli of the above-mentioned cellular materials are given by incomplete elliptic integrals. It is found that the in-plane Young’s moduli of two-dimensional cellular materials with negative Poisson’s ratios depend both on the geometry of the cell, and on the induced strain of these cellular materials. The in-plane Young’s moduli are no longer constants at large deformation. But at the limit of small strain, they converge to the results predicted by the small deformation model of flexure.


2016 ◽  
Vol 3 (2) ◽  
pp. 247-252
Author(s):  
Alex Marsden ◽  
Alexander James Marsden

Materials have been at the heart of humankind’s development since our beginning. Recently, a new family of materials have emerged that promise to revolutionise our technologies. These are materials that are only one atom thick, truly two-dimensional. From 1 to 5 of February 2016, Warwick hosted Materials Week, which brought together students, researchers, and the public to discuss materials research at Warwick. This critical reflection piece looks at the events in Materials Week that focused on the emerging field of 2D materials: a workshop to discuss 2D materials in composites and electrochemistry; a colloquium by Professor Jonathan Coleman, a leader in the production of 2D materials; and finally a lecture from Professor Sir Konstantin Novoselov, one of the two researchers who won the Nobel Prize in Physics for having started the 2D revolution.


2017 ◽  
Author(s):  
Varun Bheemireddy

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>


Author(s):  
Jiazhong Geng ◽  
Keyu An ◽  
Iat-Neng Chan ◽  
Haoqiang Ai ◽  
Kin Ho Lo ◽  
...  

Two-dimensional (2D) materials with unique structures and diverse applications have attracted extensive interest. Here, we survey a new series of two-dimensional materials, transition metal carbon nitrogen compounds (MCNs), and investigate...


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