Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with x ∼ 1

Nanoscale ◽  
2019 ◽  
Vol 11 (36) ◽  
pp. 16978-16990 ◽  
Author(s):  
Carlos M. M. Rosário ◽  
Bo Thöner ◽  
Alexander Schönhals ◽  
Stephan Menzel ◽  
Alexander Meledin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Electrical Transport ◽  
Valence Change ◽  
Insight Into ◽  
Switching Devices

A detailed study of the electrical transport in TaOx thin films with x ∼ 1 provides an insight into the conduction in conductive filaments inside Ta2O5-based resistive switching devices.

scholarly journals Resistive switching in diamondoid thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Resistive Switching ◽  
Electrical Transport ◽  
Hysteresis Curve ◽  
Applied Potential ◽  
Electrical Transport Properties ◽  
Non Volatile Memory ◽  
Memory Applications

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.

scholarly journals Degradable and Dissolvable Thin-Film Materials for the Applications of New-Generation Environmental-Friendly Electronic Devices

2020 ◽  
Vol 10 (4) ◽  
pp. 1320 ◽  
Author(s):  
Xiaoyan Liu ◽  
Mingmin Shi ◽  
Yuhao Luo ◽  
Lvyang Zhou ◽  
Zhi Rong Loh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sustainable Development ◽  
Resistive Switching ◽  
Electronic Waste ◽  
Electronic Devices ◽  
Preparation Methods ◽  
Von Neumann ◽  
Environmental Friendly ◽  
Switching Devices

The environmental pollution generated by electronic waste (e-waste), waste-gas, and wastewater restricts the sustainable development of society. Environmental-friendly electronics made of degradable, resorbable, and compatible thin-film materials were utilized and explored, which was beneficial for e-waste dissolution and sustainable development. In this paper, we present a literature review about the development of various degradable and disposable thin-films for electronic applications. The corresponding preparation methods were simply reviewed and one of the most exciting and promising methods was discussed: Printing electronics technology. After a short introduction, detailed applications in the environment sensors and eco-friendly devices based on these degradable and compatible thin-films were mainly reviewed, finalizing with the main conclusions and promising perspectives. Furthermore, the future on these upcoming environmental-friendly electronic devices are proposed and prospected, especially on resistive switching devices, showing great potential applications in artificial intelligence (AI) and the Internet of Thing (IoT). These resistive switching devices combine the functions of storage and computations, which can complement the off-shelf computing based on the von Neumann architecture and advance the development of the AI.

scholarly journals High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Growth Temperature ◽  
High Performance ◽  
20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

scholarly journals Nanocharacterization of Strontium Titanate Thin Films and Oxide-Electrode Interfaces in Resistive Switching Devices

2016 ◽  
Vol 22 (S3) ◽  
pp. 1568-1569
Author(s):  
William J. Bowman ◽  
Eva Sediva ◽  
Peter Crozier ◽  
Jennifer L.M. Rupp
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Resistive Switching ◽  
Oxide Electrode ◽  
Switching Devices

Fabrication of a resistive switching gallium oxide thin film with a tailored gallium valence state and oxygen deficiency by rf cosputtering process

RSC Advances ◽  
2016 ◽  
Vol 6 (11) ◽  
pp. 8964-8970 ◽  
Author(s):  
Chiharu Kura ◽  
Yoshitaka Aoki ◽  
Etsushi Tsuji ◽  
Hiroki Habazaki ◽  
Manfred Martin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Valence State ◽  
Gallium Oxide ◽  
Oxygen Deficiency ◽  
Oxide Thin Film ◽  
Oxide Thin Films

Resistive switching gallium oxide thin films with tailored oxygen deficiency and gallium valence state were fabricated by rf cosputtering of Ga2O3 and Cr.

scholarly journals Inorganic–organic superlattice thin films for thermoelectrics

2015 ◽  
Vol 3 (40) ◽  
pp. 10349-10361 ◽  
Author(s):  
J.-P. Niemelä ◽  
A. J. Karttunen ◽  
M. Karppinen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Thermoelectric Materials ◽  
Electrical Transport ◽  
Molecular Layer ◽  
Organic Thin Film ◽  
Electrical Transport Properties ◽  
Molecular Layer Deposition ◽  
Layer Deposition

Nanoscale layer-engineering using the combined atomic/molecular layer deposition (ALD/MLD) technique for the fabrication of oxide–organic thin-film superlattices is an attractive way to tailor the performance of thermoelectric materials as it potentially allows us to suppress thermal conductivity without significantly hindering the electrical transport properties.

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