Reliability characterizations of resistive switching devices using zinc oxide thin film

Author(s):  
Fu-Chien Chiu ◽  
Peng-Wei Li ◽  
Wen-Yuan Chang ◽  
Tai-Bor Wu ◽  
Chih-Chi Chen ◽  
...  
Sensors ◽  
2021 ◽  
Vol 21 (13) ◽  
pp. 4435
Author(s):  
Hyeong-Un Jeon ◽  
Won-Ju Cho

This paper presents a fully transparent and sensitivity-programmable biosensor based on an amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with embedded resistive switching memories (ReRAMs). The sensor comprises a control gate (CG) and a sensing gate (SG), each with a resistive switching (RS) memory connected, and a floating gate (FG) that modulates the channel conductance of the a-IGZO TFT. The resistive coupling between the RS memories connected to the CG and SG produces sensitivity properties that considerably exceed the limit of conventional ion-sensitive field-effect transistor (ISFET)-based sensors. The resistances of the embedded RS memories were determined by applying a voltage to the CG–FG and SG–FG structures independently and adjusting the compliance current. Sensors constructed using RS memories with different resistance ratios yielded a pH sensitivity of 50.5 mV/pH (RCG:RSG = 1:1), 105.2 mV/pH (RCG:RSG = 2:1), and 161.9 mV/pH (RCG:RSG = 3:1). Moreover, when the RCG:RSG = 3:1, the hysteresis voltage width (VH) and drift rate were 54.4 mV and 32.9 mV/h, respectively. As the increases in VH and drift rate are lower than the amplified sensitivity, the sensor performs capably. The proposed device is viable as a versatile sensing device capable of detecting various substances, such as cells, antigens, DNA, and gases.


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Vol 35 (5) ◽  
pp. 604-607
Author(s):  
杨帆 YANG Fan ◽  
韦敏 WEI Min ◽  
邓宏 DENG Hong ◽  
杨胜辉 YANG Sheng-hui ◽  
刘冲 LIU Chong

2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  

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pp. 247-253
Author(s):  
Dae-Gyu Yang ◽  
Hyoung-Do Kim ◽  
Jong-Heon Kim ◽  
Hyun-Suk Kim

2021 ◽  
Vol 42 (3) ◽  
pp. 031101
Author(s):  
Ying Zhu ◽  
Yongli He ◽  
Shanshan Jiang ◽  
Li Zhu ◽  
Chunsheng Chen ◽  
...  

2011 ◽  
Vol 50 (3) ◽  
pp. 03CB06 ◽  
Author(s):  
Tong-Hun Hwang ◽  
Ik-Seok Yang ◽  
Oh-Kyong Kwon ◽  
Min-Ki Ryu ◽  
Choon-Won Byun ◽  
...  

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