scholarly journals Inkjet-printed co-continuous mesoporous oxides for high-current power transistors

Nanoscale ◽  
2019 ◽  
Vol 11 (29) ◽  
pp. 13731-13740 ◽  
Author(s):  
Nehru Devabharathi ◽  
Sandeep Kumar Mondal ◽  
Subho Dasgupta
Keyword(s):  
Electronic Transport ◽  
Channel Length ◽  
Large Set ◽  
Vertical Edge ◽  
High Current ◽  
Functional Oxides ◽  
Power Transistors ◽  
Mesoporous Structures ◽  
Mesoporous Oxides

Inkjet-printed co-continuous mesoporous structures have been demonstrated for a large set of functional oxides. Channel-length-independent electronic transport was achieved when the mesoporous oxides were used to obtain printed, vertical edge FETs.

scholarly journals High-Voltage and High-Current Id–Vds Measurement Method for Power Transistors Improved by Reducing Self-Heating

2020 ◽  
Vol 41 (4) ◽  
pp. 581-584
Author(s):  
Yohei Nakamura ◽  
Naotaka Kuroda ◽  
Tatsuya Yanagi ◽  
Hiroyuki Sakairi ◽  
Ken Nakahara
Keyword(s):  
High Voltage ◽  
Measurement Method ◽  
High Current ◽  
Power Transistors ◽  
Self Heating
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