A homogeneous p–n junction diode by selective doping of few layer MoSe2 using ultraviolet ozone for high-performance photovoltaic devices

Nanoscale ◽  
2019 ◽  
Vol 11 (28) ◽  
pp. 13469-13476 ◽  
Author(s):  
Xiaoming Zheng ◽  
Yuehua Wei ◽  
Jinxin Liu ◽  
Shitan Wang ◽  
Jiao Shi ◽  
...  
Keyword(s):  
High Performance ◽  
Photovoltaic Devices ◽  
Selective Doping ◽  
Photo Response ◽  
Junction Diode

We demonstrate the formation of MoSe2 p–n homojunction via partial modification, which shows good photo response.

P–N Junction Diode Using Plasma Boron-Doped Black Phosphorus for High-Performance Photovoltaic Devices

ACS Nano ◽  
2019 ◽  
Author(s):  
Dae-Kyoung Kim ◽  
Seok-Bo Hong ◽  
Kwangsik Jeong ◽  
Changmin Lee ◽  
Hyoungsub Kim ◽  
...  
Keyword(s):  
High Performance ◽  
Black Phosphorus ◽  
Photovoltaic Devices ◽  
Boron Doped ◽  
Junction Diode

Interfacial self-assembly engineering for constructing a 2D flexible superlattice polyoxometalate/rGO heterojunction for high-performance photovoltaic devices

2020 ◽  
Vol 49 (12) ◽  
pp. 3766-3774 ◽  
Author(s):  
Jianping Li ◽  
Dai Wu ◽  
Chunlei Wang ◽  
Ding Liu ◽  
Weilin Chen ◽  
...  
Keyword(s):  
Conversion Efficiency ◽  
Self Assembly ◽  
High Performance ◽  
Photoelectric Conversion Efficiency ◽  
Photovoltaic Devices ◽  
Photoelectric Conversion

The strategy of constructing a 2D flexible superlattice polyoxometalate/rGO heterojunction is proposed to improve the photoelectric conversion efficiency of photovoltaic devices.

scholarly journals Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1692
Author(s):  
Emmanuel K. Ampadu ◽  
Jungdong Kim ◽  
Eunsoon Oh
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Photovoltaic Device ◽  
Photovoltaic Devices ◽  
Temperature Spectrum ◽  
Terahertz Region ◽  
Room Temperature Spectrum ◽  
Ftir Spectrometer ◽  
Titanium Substrates ◽  
Deposition Conditions

We fabricated a lateral photovoltaic device for use as infrared to terahertz (THz) detectors by chemically depositing PbS films on titanium substrates. We discussed the material properties of PbS films grown on glass with varying deposition conditions. PbS was deposited on Ti substrates and by taking advantage of the Ti/PbS Schottky junction, we discussed the photocurrent transients as well as the room temperature spectrum response measured by Fourier transform infrared (FTIR) spectrometer. Our photovoltaic PbS device operates at room temperature for wavelength ranges up to 50 µm, which is in the terahertz region, making the device highly applicable in many fields.

scholarly journals Selective Doping of Quantum Dot Nanomaterials for Managing Intersubband Absorption, Dark Current, and Photoelectron Lifetime

MRS Advances ◽  
2017 ◽  
Vol 2 (14) ◽  
pp. 759-766 ◽  
Author(s):  
Kimberly Sablon ◽  
Andrei Sergeev ◽  
Xiang Zhang ◽  
Vladimir Mitin ◽  
Michael Yakimov ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Dark Current ◽  
Spectral Characteristics ◽  
Nonradiative Recombination ◽  
Photovoltaic Devices ◽  
Electron Population ◽  
Selective Doping ◽  
Intersubband Absorption ◽  
Novel Approach ◽  
N Doping

ABSTRACTNovel approach to optimize quantum dot (QD) materials for specific optoelectronic applications is based on engineering of nanoscale potential profile, which is created by charged QDs. The nanoscale barriers prevent capture of photocarriers and drastically increase the photoelectron lifetime, which in turn strongly improves the photoconductive gain, responsivity, and sensitivity of photodetectors and decreases the nonradiative recombination losses of photovoltaic devices. QD charging may be created by various types of selective doping. To investigate effects of selective doping, we model, fabricated, and characterized AlGaAs/InAs QD structures with n-doping of QD layers, doping of interdot layers, and bipolar doping, which combines p-doping of QD layers with strong n-doping of the interdot space. We have measured spectral characteristics of photoresponse, photocurrent and dark current. The experimental data show that providing the same electron population of QDs, the bipolar doping creates the most contrasting nanoscale profile with the highest barriers around dots.

Constructing efficient organic photovoltaic devices with a spirobifluorene based water/alcohol-soluble cathode interlayer

2018 ◽  
Vol 42 (11) ◽  
pp. 8960-8967 ◽  
Author(s):  
Yang Miao ◽  
Yincai Xu ◽  
Yuewei Zhang ◽  
Xianju Yan ◽  
Kaiqi Ye ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Polymer Solar Cells ◽  
Organic Photovoltaic ◽  
Photovoltaic Devices ◽  
Organic Photovoltaic Devices ◽  
High Performance Polymer ◽  
Cathode Interlayer ◽  
Water Alcohol

Water/alcohol-soluble 3D-structured spirobifluorene based cathode interlayers (CILs) were synthesized and employed to fabricate high performance polymer solar cells (PSCs).

Two-dimensional GeSe for high performance thin-film solar cells

2018 ◽  
Vol 6 (12) ◽  
pp. 5032-5039 ◽  
Author(s):  
Xingshuai Lv ◽  
Wei Wei ◽  
Cong Mu ◽  
Baibiao Huang ◽  
Ying Dai
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Schottky Barrier ◽  
High Performance ◽  
Thin Film Solar Cells ◽  
Two Dimensional ◽  
Photovoltaic Devices ◽  
Promising Candidate

Multilayer GeSe can be a promising candidate for flexible photovoltaic devices because of the low Schottky barrier at the back electrode and high PCE of ∼18%.

Two-dimensional (PEA)2PbBr4 perovskite single crystals for a high performance UV-detector

2019 ◽  
Vol 7 (6) ◽  
pp. 1584-1591 ◽  
Author(s):  
Yunxia Zhang ◽  
Yucheng Liu ◽  
Zhuo Xu ◽  
Haochen Ye ◽  
Qingxian Li ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
High Performance ◽  
Two Dimensional ◽  
Uv Detector ◽  
High Quality ◽  
Photo Response ◽  
Response Performance

A centimeter-sized high-quality two-dimensional (PEA)2PbBr4 single crystal was prepared, which exhibited superior UV photo-response performance.

Local photo-response measurements of photovoltaic devices

2008 ◽  
Vol 5 (2) ◽  
pp. 645-648 ◽  
Author(s):  
A. R. Gxasheka ◽  
E. E. van Dyk ◽  
F. J. Vorster
Keyword(s):  
Photovoltaic Devices ◽  
Photo Response
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