scholarly journals Optical properties of plasmonic nanopore arrays prepared by electron beam and colloidal lithography

2019 ◽  
Vol 1 (11) ◽  
pp. 4282-4289
Author(s):  
Bita Malekian ◽  
Kunli Xiong ◽  
Evan S. H. Kang ◽  
John Andersson ◽  
Gustav Emilsson ◽  
...  

We present new plasmonic nanopore arrays and their optical properties, in particular the influence from short-range vs. long-range ordering.

2020 ◽  
Vol 61 (11-12) ◽  
pp. 792-797
Author(s):  
A. Yu. Zhilyakov ◽  
S. V. Belikov ◽  
A. F. Gibadullina ◽  
I. B. Polovov ◽  
I. V. Ilikbaev

1998 ◽  
Vol 517 ◽  
Author(s):  
Yoshiyasu Yamada ◽  
Takao Suzuki

AbstractThe very large perpendicular magnetic anisotropy of the order of 2 x 107 erg/cm3 at room temperature was found in CoJ-x Ptx(0<x<0.5) alloy thin films made by e-beam evaporation. The large magnetic anisotropy is likely related to the anisotropic Co-Co bonding distribution, which is similar to the cases of Co/Pt multilayers and FePt alloy thin films. The activation energy estimated for the ordering is approximately 0.3 eV, which is preferably compared to 0.2 eV for FePt. A model is proposed, for which both a short range and long range ordering are present, depending on substrate deposition temperature.


2000 ◽  
Vol 2 (17) ◽  
pp. 3933-3941 ◽  
Author(s):  
Ana I. Becerro ◽  
Falko Langenhorst ◽  
Ross J. Angel ◽  
Stefan Marion ◽  
Catherine A. McCammon ◽  
...  

Nanoscale ◽  
2019 ◽  
Vol 11 (17) ◽  
pp. 8416-8432 ◽  
Author(s):  
Maura Cesaria ◽  
Antonietta Taurino ◽  
Maria Grazia Manera ◽  
Maria Minunni ◽  
Simona Scarano ◽  
...  

A simplified colloidal lithography protocol (polyelectrolyte monolayer) for Au nanohole fabrication and autocorrelation/FFT analysis of SEM images to disclose hidden short-range periodicities.


1993 ◽  
Vol 20 (3) ◽  
pp. 241-253 ◽  
Author(s):  
G. Messina ◽  
A. Paoletti ◽  
S. Santangelo ◽  
A. Tucciarone

IUCrJ ◽  
2020 ◽  
Vol 7 (4) ◽  
pp. 673-680
Author(s):  
Nikolaj Roth ◽  
Tiejun Zhu ◽  
Bo B. Iversen

Defective half-Heusler systems X 1−x YZ with large amounts of intrinsic vacancies, such as Nb1−x CoSb, Ti1−x NiSb and V1−x CoSb, are a group of promising thermoelectric materials. Even with high vacancy concentrations they maintain the average half-Heusler crystal structure. These systems show high electrical conductivity but low thermal conductivity arising from an ordered YZ substructure, which conducts electrons, while the large amounts of vacancies in the X substructure effectively scatters phonons. Using electron scattering, it was recently observed that, in addition to Bragg diffraction from the average cubic half-Heusler structure, some of these samples show broad diffuse scattering indicating short-range vacancy order, while other samples show sharp additional peaks indicating long-range vacancy ordering. Here it is shown that both the short- and long-range ordering can be explained using the same simple model, which assumes that vacancies in the X substructure avoid each other. The samples showing long-range vacancy order are in agreement with the predicted ground state of the model, while short-range order samples are quenched high-temperature states of the system. A previous study showed that changes in sample stoichiometry affect whether the short- or long-range vacancy structure is obtained, but the present model suggests that thermal treatment of samples should allow controlling the degree of vacancy order, and thereby the thermal conductivity, without changes in composition. This is important as the composition also dictates the amount of electrical carriers. Independent control of electrical carrier concentration and degree of vacancy order should allow further improvements in the thermoelectric properties of these systems.


1978 ◽  
Vol 11 (13) ◽  
pp. 2815-2822 ◽  
Author(s):  
L Billard ◽  
P Villemain ◽  
A Chamberod

MRS Bulletin ◽  
1997 ◽  
Vol 22 (7) ◽  
pp. 38-43 ◽  
Author(s):  
J. Mirecki Millunchick ◽  
R.D. Twesten ◽  
S.R. Lee ◽  
D.M. Follstaedt ◽  
E.D. Jones ◽  
...  

The application of III-V semiconductor alloys in device structures is of importance for high-speed microelectronics and optoelectronics. These alloys have allowed the device engineer to tailor material parameters such as the bandgap and carrier mobility to the need of the device by altering the alloy composition. When using ternary or quaternary materials, the device designer presumes that the alloy is completely disordered, without any correlation between the atoms on the cation (anion) sublattice. However the thermodynamics of the alloy system often produce material that has some degree of macroscopic or microscopic ordering. Short-range ordering occurs when atoms adopt correlated neighboring positions over distances of the order of a few lattice spacings. This can be manifested as the preferential association of like atoms, as in clustering, or of unlike atoms, as in chemical ordering (e.g., CuPt ordering). Long-range ordering occurs over many tens of lattice spacings, as in the case of phase separation. In either short-range or long-range ordering, the band structure and the crystal symmetry are greatly altered. Therefore it is absolutely critical that the mechanisms be fully understood to prevent ordering when necessary or to exploit it when possible.


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