scholarly journals Non-ohmic behavior and resistive switching of Au cluster-assembled films beyond the percolation threshold

2019 ◽  
Vol 1 (8) ◽  
pp. 3119-3130 ◽  
Author(s):  
M. Mirigliano ◽  
F. Borghi ◽  
A. Podestà ◽  
A. Antidormi ◽  
L. Colombo ◽  
...  
Keyword(s):  
Percolation Threshold ◽  
Resistive Switching ◽  
Neuromorphic Computing ◽  
Ohmic Behavior ◽  
Au Cluster

Networks based on nanoscale resistive switching junctions are considered promising for the fabrication of neuromorphic computing architectures.

scholarly journals Multistate resistive switching behaviors for neuromorphic computing in memristor

2021 ◽  
Vol 9 ◽  
pp. 100125
Author(s):  
B. Sun ◽  
S. Ranjan ◽  
G. Zhou ◽  
T. Guo ◽  
Y. Xia ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Neuromorphic Computing

Reliable analog resistive switching behaviors achieved using memristive devices in AlOx/HfOx bilayer structure for neuromorphic systems

2021 ◽  
Author(s):  
Meng Qi ◽  
Tianquan Fu ◽  
Huadong Yang ◽  
ye tao ◽  
Chunran Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Learning Experience ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Spike Timing ◽  
Information Storage ◽  
Bilayer Structure ◽  
Neuromorphic Computing ◽  
Von Neumann ◽  
Simulation Based

Abstract Human brain synaptic memory simulation based on resistive random access memory (RRAM) has an enormous potential to replace traditional Von Neumann digital computer thanks to several advantages, including its simple structure, high-density integration, and the capability to information storage and neuromorphic computing. Herein, the reliable resistive switching (RS) behaviors of RRAM are demonstrated by engineering AlOx/HfOx bilayer structure. This allows for uniform multibit information storage. Further, the analog switching behaviors are capable of imitate several synaptic learning functions, including learning experience behaviors, short-term plasticity-long-term plasticity transition, and spike-timing-dependent-plasticity (STDP). In addition, the memristor based on STDP learning rules are implemented in image pattern recognition. These results may offer a promising potential of HfOx-based memristors for future information storage and neuromorphic computing applications.

Resistive Switching Memory based on Silver-doped Chitosan Thin Films

MRS Advances ◽  
2018 ◽  
Vol 3 (33) ◽  
pp. 1943-1948 ◽  
Author(s):  
C. Strobel ◽  
T. Sandner ◽  
S. Strehle
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tin Oxide ◽  
Bottom Electrode ◽  
Low Cost ◽  
Memory Devices ◽  
Neuromorphic Computing ◽  
Resistive Switching Memory ◽  
Switching Behaviour ◽  
Switching Memory

AbstractMemristors represent an intriguing two-terminal device strategy potentially able to replace conventional memory devices as well as to support neuromorphic computing architectures. Here, we present the resistive switching behaviour of the sustainable and low-cost biopolymer chitosan, which can be extracted from natural chitin present for instance in crab exoskeletons. The biopolymer films were doped with Ag ions in varying concentrations and sandwiched between a bottom electrode such as fluorinated-tin-oxide and a silver top electrode. Silver-doped devices showed an overall promising resistive switching behaviour for doping concentrations between 0.5 to 1 wt% AgNO3. As bottom electrode fluorinated-tin-oxide, nickel, silver and titanium were studied and multiple write and erase cycles were recorded. However, the overall reproducibility and stability are still insufficient to support broader applicability.

Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory

Nanoscale ◽  
2020 ◽  
Vol 12 (43) ◽  
pp. 22070-22074 ◽  
Author(s):  
Kuan-Chang Chang ◽  
Tianjiao Dai ◽  
Lei Li ◽  
Xinnan Lin ◽  
Shengdong Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Neuromorphic Computing ◽  
Resistive Switching Memory ◽  
Multilevel Storage ◽  
Multi Level ◽  
Switching Memory

This work investigated the influence of surrounding material on RRAM and offered a strategy to achieve multilevel storage functionality with superior scalability and stability, suggesting its potential to be applied in neuromorphic computing area.

Analog‐Type Resistive Switching Devices for Neuromorphic Computing

2019 ◽  
Vol 13 (10) ◽  
pp. 1900204 ◽  
Author(s):  
Wenbin Zhang ◽  
Bin Gao ◽  
Jianshi Tang ◽  
Xinyi Li ◽  
Wei Wu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Neuromorphic Computing ◽  
Switching Devices

The Resistive Switching Behavior of ZnO Films Depending on Li Dopant Concentration and Electrode Materials

2016 ◽  
Vol 99 ◽  
pp. 75-80
Author(s):  
Arsen Igityan ◽  
Yevgenia Kafadaryan ◽  
Natella Aghamalyan ◽  
Silva Petrosyan
Keyword(s):  
Resistive Switching ◽  
Electrode Materials ◽  
Switching Behavior ◽  
Zno Films ◽  
Lithium Content ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Glass Substrates ◽  
Ohmic Behavior ◽  
Doped Zno

Lithium (0, 1.0 and 10 at.%)-doped ZnO (LiZnO) polycrystalline thin films were deposited on Pt/SiO2, LaB6/Al2O3, Au/SiO2 and 20 at.% fluorine-doped SnO2(FTO)/glass substrates by an e-beam evaporation method. Metal/LiZnO/Metal sandwich structures were constructed by depositing different top electrodes (Ag, Al and Au) to find memristive characteristics depending on the lithium content and electrode materials. Compared with undoped and 1%Li-doped ZnO devices, the 10 at.%Li-doped ZnO (10LiZnO) device exhibits resistive switching memory. The Ag/10LiZnO/Pt and Ag/10LiZnO/LaB6 memory devices exhibit unipolar resistive switching behavior while bipolar resistive switching in Ag/10LiZnO/FTO, Au/10LiZnO/FTO and Al/10LiZnO/LaB6 structures is revealed. The dominant conduction mechanisms are explained in terms of Ohmic behavior, space charge limited current (SCLC) and Schottky emission for the URS and BRS behaviors.

scholarly journals Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Sifan Li ◽  
Bochang Li ◽  
Xuewei Feng ◽  
Li Chen ◽  
Yesheng Li ◽  
...  
Keyword(s):  
Electron Beam ◽  
Resistive Switching ◽  
Neuromorphic Computing ◽  
Reset Voltage ◽  
Voltage Variation ◽  
Artificial Synapse ◽  
Metal Insulator Metal ◽  
Temporal And Spatial ◽  
Transition Voltage

AbstractState-of-the-art memristors are mostly formed by vertical metal–insulator–metal (MIM) structure, which rely on the formation of conductive filaments for resistive switching (RS). However, owing to the stochastic formation of filament, the set/reset voltage of vertical MIM memristors is difficult to control, which results in poor temporal and spatial switching uniformity. Here, a two-terminal lateral memristor based on electron-beam-irradiated rhenium disulfide (ReS2) is realized, which unveils a resistive switching mechanism based on Schottky barrier height (SBH) modulation. The devices exhibit a forming-free, stable gradual RS characteristic, and simultaneously achieve a small transition voltage variation during positive and negative sweeps (6.3%/5.3%). The RS is attributed to the motion of sulfur vacancies induced by voltage bias in the device, which modulates the ReS2/metal SBH. The gradual SBH modulation stabilizes the temporal variation in contrast to the abrupt RS in MIM-based memristors. Moreover, the emulation of long-term synaptic plasticity of biological synapses is demonstrated using the device, manifesting its potential as artificial synapse for energy-efficient neuromorphic computing applications.

Nonvolatile Resistive Memory Switching in Amorphous LaGdO3 Thin Films

2013 ◽  
Vol 1562 ◽  
Author(s):  
P. Misra ◽  
S. P. Pavunny ◽  
R. S. Katiyar
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
High Resistance ◽  
Temperature Dependent ◽  
Memory Switching ◽  
Ohmic Behavior ◽  
Nonvolatile Memories ◽  
Frenkel Emission ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

ABSTRACTNonvolatile unipolar resistive switching properties of the amorphous LaGdO3 thin films deposited by pulsed laser deposition have been studied. Reliable and repeatable switching of the resistance of LaGdO3 film was obtained between low and high resistance states with nearly constant resistance ratio ∼ 106 and non-overlapping switching voltages in the range of ∼0.6-0.75 V and 2.5-4 V respectively. The switching between low and high resistance states was attributed to the formation and rupture of conductive filaments using temperature dependent resistance measurements. The current conduction mechanisms of the LaGdO3 film in low and high resistance states were found to follow the Ohmic behavior and Poole-Frenkel emission respectively. The resistance of low and high resistance states of the film remained nearly constant for up to ∼ 104 seconds indicating good retention. The observed resistive switching characteristics of LaGdO3 thin films are promising for futuristic nonvolatile memories.

scholarly journals Мемристоры на основе поли-n-ксилилена с внедренными наночастицами серебра

2020 ◽  
Vol 46 (2) ◽  
pp. 25
Author(s):  
А.Н. Мацукатова ◽  
А.В. Емельянов ◽  
А.А. Миннеханов ◽  
Д.А. Сахарутов ◽  
А.Ю. Вдовиченко ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Resistive Switching ◽  
Retention Time ◽  
Switching Effect ◽  
Neuromorphic Computing ◽  
Computing Systems ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Resistive Switching Effect

The properties of parylene based memristors with embedded silver nanoparticles were studied: current–voltage characteristics and resistive switching effect, endurance and retention time. It was found that introduction of nanoparticles leads to a significant improvement of the main memristive characteristics. Obtained results could be used to create large memristor arrays with homogeneous characteristics that emulate synapses in neuromorphic computing systems.

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