scholarly journals The matrix effect in TOF-SIMS analysis of two-element inorganic thin films

2020 ◽  
Vol 35 (6) ◽  
pp. 1156-1166 ◽  
Author(s):  
Agnieszka Priebe ◽  
Tianle Xie ◽  
Gerhard Bürki ◽  
Laszlo Pethö ◽  
Johann Michler
Keyword(s):  
Thin Films ◽  
Matrix Effect ◽  
Ion Beam ◽  
Ionization Probability ◽  
Tof Sims ◽  
The Matrix ◽  
Inorganic Thin Films ◽  
Sims Analysis

Investigation of the matrix effect in Zr-based two-element alloys under continuous bombardment of a Ga+ primary ion beam in a study of ionization probability towards exploring the potential and limitations of gas-assisted TOF-SIMS.

Development of an Argon Gas Cluster Ion Beam for ToF‐SIMS Analysis

2019 ◽  
Vol 40 (9) ◽  
pp. 877-881 ◽  
Author(s):  
Sang Ju Lee ◽  
Chang Min Choi ◽  
Boo Ki Min ◽  
Ji Young Baek ◽  
Jae Yeong Eo ◽  
...  
Keyword(s):  
Ion Beam ◽  
Argon Gas ◽  
Tof Sims ◽  
Cluster Ion ◽  
Sims Analysis ◽  
Gas Cluster Ion Beam

TOF SIMS analysis, structure and photoluminescence properties of pulsed laser deposited CaS:Eu2+ thin films

2015 ◽  
Vol 167 ◽  
pp. 172-178 ◽  
Author(s):  
R.L. Nyenge ◽  
S.K.K. Shaat ◽  
L.L. Noto ◽  
P.P. Mokoena ◽  
H.C. Swart ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Photoluminescence Properties ◽  
Tof Sims ◽  
Sims Analysis

scholarly journals ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition

Nanomaterials ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 1035 ◽  
Author(s):  
Alireza M. Kia ◽  
Nora Haufe ◽  
Sajjad Esmaeili ◽  
Clemens Mart ◽  
Mikko Utriainen ◽  
...  
Keyword(s):  
Thin Films ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
3D Analysis ◽  
Tof Sims ◽  
Before And After ◽  
Sims Analysis

For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary ion mass spectrometry (ToF-SIMS) overcomes several challenges in comparison to other frequently used techniques such as electron microscopy. The research presented herein focuses on two different kinds of HAR structures that represent different semiconductor technologies. In the first study, ToF-SIMS is used to illustrate cobalt seed layer corrosion by the copper electrolyte within the large through-silicon-vias (TSVs) before and after copper electroplating. However, due to the sample’s surface topography, ToF-SIMS analysis proved to be difficult due to the geometrical shadowing effects. Henceforth, in the second study, we introduce a new test platform to eliminate the difficulties with the HAR structures, and again, use ToF-SIMS for elemental analysis. We use data image slicing of 3D ToF-SIMS analysis combined with lateral HAR test chips (PillarHall™) to study the uniformity of silicon dopant concentration in atomic layer deposited (ALD) HfO2 thin films.

Measurement of InxGa1-xN and AlxGa1-xN Compositions by RBS and SIMS

1997 ◽  
Vol 468 ◽  
Author(s):  
Y. Gao ◽  
J. Kirchhoff ◽  
S. Mitha ◽  
J. W. Erickson ◽  
C. Huang ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Quantum Well ◽  
Matrix Effect ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Compositional Analysis ◽  
Analytical Technique ◽  
The Matrix ◽  
Sims Analysis ◽  
Secondary Ion

ABSTRACTSecondary ion mass spectrometry (SIMS) and Rutherford Backscattering Spectrometry (RBS) techniques were used to determine InxGa1-xN and AlxGa1-xN compositions. While RBS is generally considered a quantitative technique for compositional analysis, SIMS has not been. We have applied a new analytical technique, which reduces the matrix effect in SIMS analysis, to accurately determine stoichiometry. The composition of InxGa1-xN (AlxGa1-xN) in the multiple layers and quantum well of the LED can be measured by SIMS, but is inaccessible to RBS.

scholarly journals TOF-SIMS Analysis by Means of Cluster Ion Beam

2018 ◽  
Vol 61 (7) ◽  
pp. 435-439
Author(s):  
Takuya MIYAYAMA
Keyword(s):  
Ion Beam ◽  
Tof Sims ◽  
Cluster Ion ◽  
Sims Analysis

Sub-0.1 µm Patterning Characteristics of Inorganic Thin Films by Focused-Ion-Beam Lithography

1998 ◽  
Vol 37 (Part 1, No. 12B) ◽  
pp. 6792-6796 ◽  
Author(s):  
Hyun-Yong Lee ◽  
Seung-Woo Paek ◽  
Hong-Bay Chung
Keyword(s):  
Thin Films ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Lithography ◽  
Inorganic Thin Films

scholarly journals ToF-SIMS analysis of an organic layer using toluene and its cluster ion beam projectiles generated by multiphoton ionization

2018 ◽  
Vol 458 ◽  
pp. 805-809 ◽  
Author(s):  
Chang Min Choi ◽  
Sang Ju Lee ◽  
Ji Young Baek ◽  
Jeong Jin Kim ◽  
Myoung Choul Choi
Keyword(s):  
Ion Beam ◽  
Multiphoton Ionization ◽  
Organic Layer ◽  
Tof Sims ◽  
Cluster Ion ◽  
Sims Analysis

Characterization of the inverted tetrahedral twin particles in the heteroepitaxial KNbO3 thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 466-467
Author(s):  
Shang H. Rou ◽  
John J. Hren ◽  
Philip D. Hren ◽  
Thomas M. Graettingcr ◽  
Michael S. Ameen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Diffraction Pattern ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Epitaxial Relationship ◽  
Target Holder ◽  
Transmission Electron ◽  
The Matrix

Perovskite potassium niobate (KNbO3) possesses good electrooptic properties for modulated channel waveguide applications, Epitaxial KNbO3 thin films were deposited onto (100) MgO substrates using an ion beam sputtering technique equipped with a novel computer-controlled rotating target holder , Conventional transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM) were employed to perform defect structure and microstructure analysis. Special TEM sample preparation procedures have been developed, which will be reported elsewhere, Tetrahedral twin particles (TTP's) were observed in the epitaxial KNbO3 thin films. Since, the orientation difference between the TTP's and the matrix may affect the polarization switching properties, it is essential to understand their origin and eliminate them if possible.A selected area diffraction pattern of a KNbO3 thin film taken along the substrate (012) (figure 1) reveals twin and double diffraction spots. The mirror planes are determined to be of the {211} family. Figure 2(a) shows the electron diffraction pattern taken along the substrate (100). Twin spots coincide with some of the matrix spots indicating that the twin also maintains an epitaxial relationship with the MgO substrate. The orientation relationship between the twins and the matrix is [221]twin//[100]matrix.

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