Line-narrowed argon fluoride LA-LEAF for trace arsenic analysis

2020 ◽  
Vol 35 (1) ◽  
pp. 78-83
Author(s):  
P. D. Tribbett ◽  
C. A. Jones ◽  
A. G. Anders ◽  
B. Rougeau ◽  
J. A. Merten
Keyword(s):  
Deep Ultraviolet ◽  
Arf Laser ◽  
Argon Fluoride

A tunable ArF laser is used for deep ultraviolet LIF of arsenic in LIPs.

Novel organic, polymeric materials for electronics applications

2002 ◽  
Vol 722 ◽  
Author(s):  
Ram W. Sabnis ◽  
Mary J. Spencer ◽  
Douglas J. Guerrero
Keyword(s):  
Optical Density ◽  
Chemical Vapor ◽  
Polymeric Materials ◽  
Substantial Improvement ◽  
Polymeric Systems ◽  
Patterned Wafers ◽  
Visible Spectra ◽  
Potential Applications ◽  
Deep Ultraviolet ◽  
Deposited Films

AbstractNovel organic, polymeric materials and processes of depositing thin films on electronics substrates by chemical vapor deposition (CVD) have been developed and the lithographic behavior of photoresist coated over these CVD films at deep ultraviolet (DUV) wavelength has been evaluated. The specific monomers synthesized for DUV applications include [2.2](1,4)- naphthalenophane, [2.2](9,10)-anthracenophane and their derivatives which showed remarkable film uniformity on flat wafers and conformality over structured topography wafers, upon polymerization by CVD. The chemical, physical and optical properties of the deposited films have been characterized by measuring parameters such as thickness uniformity, solubility, conformality, adhesion to semiconductor substrates, ultraviolet-visible spectra, optical density, optical constants, defectivity, and resist compatibility. Scanning electron microscope (SEM) photos of cross-sectioned patterned wafers showed verticle profiles with no footing, standing waves or undercut. Resist profiles down to 0.10 νm dense lines and 0.09 νm isolated lines were achieved in initial tests. CVD coatings generated 96-100% conformal films, which is a substantial improvement over commercial spin-on polymeric systems. The light absorbing layers have high optical density at 248 nm and are therefore capable materials for DUV lithography applications. CVD is a potentially useful technology to extend lithography for sub-0.15 νm devices. These films have potential applications in microelectronics, optoelectronics and photonics.

Intrinsic doping limit and defect-assisted luminescence in Cs4PbBr6

2019 ◽  
Author(s):  
Young-Kwang Jung ◽  
Joaquin Calbo ◽  
Ji-Sang Park ◽  
Lucy D. Wahlley ◽  
Sunghyun Kim ◽  
...  
Keyword(s):  
First Principles ◽  
Room Temperature ◽  
Stokes Shift ◽  
Green Luminescence ◽  
Counter Ions ◽  
Self Consistent ◽  
Deep Ultraviolet ◽  
Halide Perovskite ◽  
Related Compounds ◽  
Level Analysis

Cs<sub>4</sub>PbBr<sub>6 </sub>is a member of the halide perovskite family that is built from isolated (zero-dimensional) PbBr<sub>6</sub><sup>4-</sup> octahedra with Cs<sup>+</sup> counter ions. The material exhibits anomalous optoelectronic properties: optical absorption and weak emission in the deep ultraviolet (310 - 375 nm) with efficient luminescence in the green region (~ 540 nm). Several hypotheses have been proposed to explain the giant Stokes shift including: (i) phase impurities; (ii) self-trapped exciton; (iii) defect emission. We explore, using first-principles theory and self-consistent Fermi level analysis, the unusual defect chemistry and physics of Cs<sub>4</sub>PbBr<sub>6</sub>. We find a heavily compensated system where the room-temperature carrier concentrations (< 10<sup>9</sup> cm<sup>-3</sup>) are more than one million times lower than the defect concentrations. We show that the low-energy Br-on-Cs antisite results in the formation of a polybromide (Br<sub>3</sub>) species that can exist in a range of charge states. We further demonstrate from excited-state calculations that tribromide moieties are photoresponsive and can contribute to the observed green luminescence. Photoactivity of polyhalide molecules is expected to be present in other halide perovskite-related compounds where they can influence light absorption and emission. <br>

Intrinsic doping limit and defect-assisted luminescence in Cs4PbBr6

2019 ◽  
Author(s):  
Young-Kwang Jung ◽  
Joaquin Calbo ◽  
Ji-Sang Park ◽  
Lucy D. Wahlley ◽  
Sunghyun Kim ◽  
...  
Keyword(s):  
First Principles ◽  
Room Temperature ◽  
Stokes Shift ◽  
Green Luminescence ◽  
Counter Ions ◽  
Self Consistent ◽  
Deep Ultraviolet ◽  
Halide Perovskite ◽  
Related Compounds ◽  
Level Analysis

Cs<sub>4</sub>PbBr<sub>6 </sub>is a member of the halide perovskite family that is built from isolated (zero-dimensional) PbBr<sub>6</sub><sup>4-</sup> octahedra with Cs<sup>+</sup> counter ions. The material exhibits anomalous optoelectronic properties: optical absorption and weak emission in the deep ultraviolet (310 - 375 nm) with efficient luminescence in the green region (~ 540 nm). Several hypotheses have been proposed to explain the giant Stokes shift including: (i) phase impurities; (ii) self-trapped exciton; (iii) defect emission. We explore, using first-principles theory and self-consistent Fermi level analysis, the unusual defect chemistry and physics of Cs<sub>4</sub>PbBr<sub>6</sub>. We find a heavily compensated system where the room-temperature carrier concentrations (< 10<sup>9</sup> cm<sup>-3</sup>) are more than one million times lower than the defect concentrations. We show that the low-energy Br-on-Cs antisite results in the formation of a polybromide (Br<sub>3</sub>) species that can exist in a range of charge states. We further demonstrate from excited-state calculations that tribromide moieties are photoresponsive and can contribute to the observed green luminescence. Photoactivity of polyhalide molecules is expected to be present in other halide perovskite-related compounds where they can influence light absorption and emission. <br>

Amplification of fibre Bragg grating reflectivity by post-writing exposure with a 193 nm ArF laser

1994 ◽  
Vol 30 (14) ◽  
pp. 1133-1134 ◽  
Author(s):  
P. E. Dyer ◽  
K. C. Byron ◽  
R. J. Farley ◽  
R. Giedl
Keyword(s):  
Bragg Grating ◽  
Fibre Bragg Grating ◽  
Arf Laser ◽  
193 Nm

scholarly journals An Improved Algorithm for Measuring Nitrate Concentrations in Seawater Based on Deep-Ultraviolet Spectrophotometry: A Case Study of the Aoshan Bay Seawater and Western Pacific Seawater

Sensors ◽  
2021 ◽  
Vol 21 (3) ◽  
pp. 965
Author(s):  
Xingyue Zhu ◽  
Kaixiong Yu ◽  
Xiaofan Zhu ◽  
Juan Su ◽  
Chi Wu
Keyword(s):  
Weighted Average ◽  
Measuring Method ◽  
Western Pacific ◽  
Nitrate Concentrations ◽  
Deep Ultraviolet ◽  
Ultraviolet Spectrometer ◽  
Seawater Samples ◽  
Reflection Probe

Nowadays, it is still a challenge for commercial nitrate sensors to meet the requirement of high accuracy in a complex water. Based on deep-ultraviolet spectral analysis and a regression algorithm, a different measuring method for obtaining the concentration of nitrate in seawater is proposed in this paper. The system consists of a deuterium lamp, an optical fiber splitter module, a reflection probe, temperature and salinity sensors, and a deep-ultraviolet spectrometer. The regression model based on weighted average kernel partial least squares (WA-KPLS) algorithm together with corrections for temperature and salinity (TSC) is established. After that, the seawater samples from Western Pacific and Aoshan Bay in Qingdao, China with the addition of various nitrate concentrations are studied to verify the reliability and accuracy of the method. The results show that the TSC-WA-KPLS algorithm shows the best results when compared against the multiple linear regression (MLR) and ISUS (in situ ultraviolet spectrophotometer) algorithms in the temperatures range of 4–25 °C, with RMSEP of 0.67 µmol/L for Aoshan Bay seawater and 1.08 µmol/L for Western Pacific seawater. The method proposed in this paper is suitable for measuring the nitrate concentration in seawater with higher accuracy, which could find application in the development of in-situ and real-time nitrate sensors.

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