Effect of interfacial recombination, bulk recombination and carrier mobility on the J–V hysteresis behaviors of perovskite solar cells: a drift-diffusion simulation study
2019 ◽
Vol 21
(32)
◽
pp. 17836-17845
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Keyword(s):
A J–V hysteresis loop with a large gap near the VOC (or JSC) region appears by interfacial recombination (or bulk recombination).
Keyword(s):
2018 ◽
Keyword(s):
Keyword(s):
2020 ◽
2019 ◽
2021 ◽
Vol 34
(1)
◽
pp. 01-08
Keyword(s):
2013 ◽
Vol 34
(4)
◽
pp. 463-468
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