Porous Co3O4 nanoplates as an efficient electromaterial for non-enzymatic glucose sensing

CrystEngComm ◽  
2020 ◽  
Vol 22 (1) ◽  
pp. 35-43 ◽  
Author(s):  
Min Kang ◽  
Hai Zhou ◽  
Ning Zhao ◽  
Baoliang Lv
Keyword(s):  
Hydrothermal Treatment ◽  
Thermal Annealing ◽  
Glucose Sensing ◽  
Subsequent Thermal Annealing

Porous Co3O4 nanoplates constructed by loosely interconnected nanoparticles were synthesized via an l-lysine assisted hydrothermal treatment and subsequent thermal annealing.

scholarly journals Creation of pure non-crystalline diamond nanostructures via room temperature ion irradiation and subsequent thermal annealing

2021 ◽  
Author(s):  
Federico Picollo ◽  
Alfio Battiato ◽  
Federico Bosia ◽  
Fabio Scaffidi Muta ◽  
Paolo Olivero ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Group Iv ◽  
Chemical Bonds ◽  
Group Iv Elements ◽  
Silicon And Germanium ◽  
Subsequent Thermal Annealing

Carbon exhibits a remarkable range of structural forms, due to the availability of sp3, sp2 and sp1 chemical bonds. Contrarily to other group IV elements such as silicon and germanium,...

Size characterisation of noble-metal nano-crystals formed in sapphire by ion irradiation and subsequent thermal annealing

2012 ◽  
Vol 259 ◽  
pp. 574-581 ◽  
Author(s):  
Pablo-Ernesto Mota-Santiago ◽  
Alejandro Crespo-Sosa ◽  
José-Luis Jiménez-Hernández ◽  
Hector-Gabriel Silva-Pereyra ◽  
Jorge-Alejandro Reyes-Esqueda ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Noble Metal ◽  
Ion Irradiation ◽  
Subsequent Thermal Annealing

Radiation hard amorphous silicon particle sensors

2005 ◽  
Vol 862 ◽  
Author(s):  
N. Wyrsch ◽  
C. Miazza ◽  
S. Dunand ◽  
C. Ballif ◽  
A. Shah ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Proton Beam ◽  
Thermal Annealing ◽  
Silicon Particle ◽  
Hydrogenated Amorphous Silicon ◽  
High Energy ◽  
Significant Drop ◽  
Radiation Hard ◽  
Hydrogenated Amorphous ◽  
Subsequent Thermal Annealing

AbstractRadiation tests of 32 μm thick hydrogenated amorphous silicon n-i-p diodes have been performed using a high energy 24 GeV proton beam up to fluences in excess of 1016 protons/cm2. The results are compared to irradiation of similar 1 μm and 32 μm thick n-i-p diodes using a proton beam of 280 keV at a fluence of 3x1013 protons/cm2. Even though both types of irradiation cause a significant drop in photoconductivity of thin or thick diodes, all samples survived the experiment and recover almost fully after a subsequent thermal annealing.

Evolution of Photoluminescence Mechanisms of Si+-Implanted SiO2 Films with Thermal Annealing

2008 ◽  
Vol 8 (7) ◽  
pp. 3555-3560 ◽  
Author(s):  
L. Ding ◽  
T. P. Chen ◽  
Y. Liu ◽  
C. Y. Ng ◽  
M. Yang ◽  
...  
Keyword(s):  
Band Structure ◽  
Thermal Annealing ◽  
Annealing Temperature ◽  
Energy Gap ◽  
The Other ◽  
Extended Defects ◽  
Band Transition ◽  
Luminescent Centers ◽  
Subsequent Thermal Annealing ◽  
Si Ion Implantation

The information of band structure of silicon nanocrystal (nc-Si) embedded in SiO2 thin films synthesized by Si ion implantation and subsequent thermal annealing at various temperatures has been obtained from spectroscopy ellipsometric (SE) analysis. The indirect band structure and the energy gap of the nc-Si are not affected by the annealing. In contrast, the photoluminescence (PL) spectra show a continuous evolution with the annealing. Six PL bands located at 415, 460, 520, 630, 760, and 845 nm, respectively, have been observed depending on the annealing temperature. The annealing at 1100 °C yields the strongest PL band at 760 nm (∼1.63 eV) with the intensity much higher than that of all the other PL bands. Based on the knowledge of the band structure, the 760 nm-PL band could be attributed to the indirect band-to-band transition of the nc-Si assisted by the Si—O vibration of the nc-Si/SiO2 interface with the stretching frequency of ∼1083 cm−1 (&sim0.13 eV). On the other hand, the first four PL bands mentioned above could originate from different extended defects in the oxide matrix, while the 845-nm PL band could be related to the interface luminescent centers.

Effect of Self-Interstitials – Nanovoids Interaction on Two-Dimensional Diffusion and Activation of Implanted B in Si

2005 ◽  
Vol 108-109 ◽  
pp. 395-400 ◽  
Author(s):  
Filippo Giannazzo ◽  
E. Bruno ◽  
S. Mirabella ◽  
G. Impellizzeri ◽  
E. Napolitani ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Device Fabrication ◽  
Electrical Activation ◽  
High Dose ◽  
Dimensional Diffusion ◽  
Transmission Electron ◽  
Sio2 Mask ◽  
The Impact ◽  
Subsequent Thermal Annealing

In this work, we investigate the effect of performing a high dose 20 keV He+ implant before the implantation of B at low energy (3 keV) in silicon and the subsequent thermal annealing at 800 °C. The implants were performed in laterally confined regions defined by opening windows in a SiO2 mask, in order to evidence the impact on a realistic configuration used in device fabrication. High resolution quantitative scanning capacitance microscopy (SCM) combined with cross-section transmission electron microscopy (XTEM) allowed to clarify the role of the voids distribution produced during the thermal annealing on the diffusion and electrical activation of implanted B in Si. Particular evidence was given to the effect of the uniform nanovoids distribution, which forms in the region between the surface and the buried cavity layer.

scholarly journals Incorporation of Iron Cations Into Epitaxial Sapphire Thin Films by CO-Evaporation and Subsequent Thermal Annealing

1994 ◽  
Vol 341 ◽  
Author(s):  
Ning Yu ◽  
Harriet Kung ◽  
Michael Nastasi ◽  
DeQuan Li
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Ultra Violet ◽  
Cation Sublattice ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
Simple Method ◽  
Subsequent Thermal Annealing

AbstractIron-doped sapphire thin films have been successfully epitaxially grown onto sapphire single crystal substrates by electron beam deposition and subsequent thermal annealing. Amorphous A12O3 thin films, about 280–390 nm thick, cation doped with iron have been deposited on [0001] oriented sapphire substrates. Iron doping with cation concentrations (a ratio of Fe content to total cation content) up to 5 at.% can be incorporated into the octahedral sites of Al-cation sublattice during the epitaxial regrowth process at 1000–1400 C, as determined by Rutherford Backscattering Spectrometry and ion channeling measurements. Cross-sectional Transmission Electron Microscopy shows the presence of two distinct regions in the annealed films. One exhibits the epitaxial relationship with the sapphire substrate and the second region has amorphous type of contrast. External optical transmittance measurements in the ultra violet and visible light range have exhibited the absorption associated with Fe3+. This study has demonstrated a simple method of incorporating dopants into single crystal sapphire, which has potential in the fabrications of thin film planar optical waveguiles.

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