InAs/AlGaAs quantum dots grown by a novel molecular beam epitaxy multistep design for intermediate band solar cells: physical insight into the structure, composition, strain and optical properties

CrystEngComm ◽  
2019 ◽  
Vol 21 (31) ◽  
pp. 4644-4652 ◽  
Author(s):  
Antonietta Taurino ◽  
Massimo Catalano ◽  
Moon J. Kim ◽  
Vittorianna Tasco ◽  
Iolena Tarantini ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Solar Cells ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells ◽  
Physical Insight ◽  
Insight Into

Structural, chemical and strain assessment of In-based quantum dots grown by a peculiar multistep MBE process, for application in intermediate band solar cells (IBSCs).

Optimization towards high density quantum dots for intermediate band solar cells grown by molecular beam epitaxy

2010 ◽  
Vol 96 (6) ◽  
pp. 061913 ◽  
Author(s):  
D. Zhou ◽  
G. Sharma ◽  
S. F. Thomassen ◽  
T. W. Reenaas ◽  
B. O. Fimland
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Density ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells

scholarly journals Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation

2016 ◽  
Vol 120 (3) ◽  
pp. 034301 ◽  
Author(s):  
H. Xie ◽  
R. Prioli ◽  
A. M. Fischer ◽  
F. A. Ponce ◽  
R. M. S. Kawabata ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Solar Cells ◽  
Strain Relaxation ◽  
Misfit Strain ◽  
Inas Quantum Dots ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells

scholarly journals Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb0.44matrix for use in intermediate band solar cells

2017 ◽  
Vol 121 (21) ◽  
pp. 214304 ◽  
Author(s):  
Mukul C. Debnath ◽  
Baolai Liang ◽  
Ramesh B. Laghumavarapu ◽  
Guodong Wang ◽  
Aparna Das ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Solar Cells ◽  
Inas Quantum Dots ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells

High-density InAs/GaAs1−xSbx quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells

2016 ◽  
Vol 119 (11) ◽  
pp. 114301 ◽  
Author(s):  
M. C. Debnath ◽  
T. D. Mishima ◽  
M. B. Santos ◽  
Y. Cheng ◽  
V. R. Whiteside ◽  
...  
Keyword(s):  
Solar Cells ◽  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Molecular Beam ◽  
High Density ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells

scholarly journals Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 344
Author(s):  
Yasushi Shoji ◽  
Ryo Tamaki ◽  
Yoshitaka Okada
Keyword(s):  
Solar Cells ◽  
Molecular Beam ◽  
Optical Excitation ◽  
Material System ◽  
Intermediate Band ◽  
Temperature Characteristics ◽  
Quantum Nanostructures ◽  
Band Engineering ◽  
Intermediate Band Solar Cells ◽  
Carrier Extraction

From the viewpoint of band engineering, the use of GaSb quantum nanostructures is expected to lead to highly efficient intermediate-band solar cells (IBSCs). In IBSCs, current generation via two-step optical excitations through the intermediate band is the key to the operating principle. This mechanism requires the formation of a strong quantum confinement structure. Therefore, we focused on the material system with GaSb quantum nanostructures embedded in AlGaAs layers. However, studies involving crystal growth of GaSb quantum nanostructures on AlGaAs layers have rarely been reported. In our work, we fabricated GaSb quantum dots (QDs) and quantum rings (QRs) on AlGaAs layers via molecular-beam epitaxy. Using the Stranski–Krastanov growth mode, we demonstrated that lens-shaped GaSb QDs can be fabricated on AlGaAs layers. In addition, atomic force microscopy measurements revealed that GaSb QDs could be changed to QRs under irradiation with an As molecular beam even when they were deposited onto AlGaAs layers. We also investigated the suitability of GaSb/AlGaAs QDSCs and QRSCs for use in IBSCs by evaluating the temperature characteristics of their external quantum efficiency. For the GaSb/AlGaAs material system, the QDSC was found to have slightly better two-step optical excitation temperature characteristics than the QRSC.

scholarly journals Molecular beam and pulsed laser deposition of ZnS:Cr for intermediate band solar cells

2015 ◽  
Vol 141 ◽  
pp. 322-330 ◽  
Author(s):  
Mohammadreza Nematollahi ◽  
Xiaodong Yang ◽  
Lars Martin Sandvik Aas ◽  
Zahra Ghadyani ◽  
Morten Kildemo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Pulsed Laser Deposition ◽  
Molecular Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells

Growth and optical properties of ZnTe quantum dots on ZnMgSe by molecular beam epitaxy

2015 ◽  
Vol 425 ◽  
pp. 186-190 ◽  
Author(s):  
W.C. Fan ◽  
S.H. Huang ◽  
W.C. Chou ◽  
M.H. Tsou ◽  
C.S. Yang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam

Effect of spacer layer thickness on multi-stacked InGaAs quantum dots grown on GaAs (311)B substrate for application to intermediate band solar cells

2012 ◽  
Vol 111 (7) ◽  
pp. 074305 ◽  
Author(s):  
Yasushi Shoji ◽  
Kohei Narahara ◽  
Hideharu Tanaka ◽  
Takashi Kita ◽  
Katsuhiro Akimoto ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Layer Thickness ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells ◽  
Spacer Layer Thickness ◽  
Spacer Layer
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