Effect of spacer layer thickness on multi-stacked InGaAs quantum dots grown on GaAs (311)B substrate for application to intermediate band solar cells

2012 ◽  
Vol 111 (7) ◽  
pp. 074305 ◽  
Author(s):  
Yasushi Shoji ◽  
Kohei Narahara ◽  
Hideharu Tanaka ◽  
Takashi Kita ◽  
Katsuhiro Akimoto ◽  
...  
2015 ◽  
Vol 6 ◽  
pp. 2046-2051 ◽  
Author(s):  
Chamanei S Perera ◽  
Alison M Funston ◽  
Han-Hao Cheng ◽  
Kristy C Vernon

In this paper we image the highly confined long range plasmons of a nanoscale metal stripe waveguide using quantum emitters. Plasmons were excited using a highly focused 633 nm laser beam and a specially designed grating structure to provide stronger incoupling to the desired mode. A homogeneous thin layer of quantum dots was used to image the near field intensity of the propagating plasmons on the waveguide. We observed that the photoluminescence is quenched when the QD to metal surface distance is less than 10 nm. The optimised spacer layer thickness for the stripe waveguides was found to be around 20 nm. Authors believe that the findings of this paper prove beneficial for the development of plasmonic devices utilising stripe waveguides.


Author(s):  
Meng Sun ◽  
Paul J. Simmonds ◽  
Ramesh Babu Laghumavarapu ◽  
Andrew Lin ◽  
Charles J. Reyner ◽  
...  

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