Ultra-sensitive gas phase detection of 2,4,6-trinitrotoluene by non-covalently functionalized graphene field effect transistors

The Analyst ◽  
2020 ◽  
Vol 145 (3) ◽  
pp. 917-928 ◽  
Author(s):  
Ashwini S. Gajarushi ◽  
Sandeep G. Surya ◽  
Mrinalini G. Walawalkar ◽  
M. Ravikanth ◽  
V. Ramgopal Rao ◽  
...  
Keyword(s):  
Gas Phase ◽  
Field Effect ◽  
Dirac Point ◽  
Field Effect Transistors ◽  
Phase Detection ◽  
Functionalized Graphene ◽  
Ambient Conditions ◽  
Reliable Parameter ◽  
Ppm Level

Dirac point of non-covalently functionalized graphene field effect transistors has been demonstrated as a reliable parameter for rapid (∼40 s), reliable and ultra-sensitive (ppm-level) detection of 2,4,6-trinitrotoluene under ambient conditions.

scholarly journals Doping free transfer of graphene using aqueous ammonia flow

RSC Advances ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 1127-1131 ◽  
Author(s):  
Morteza Hassanpour Amiri ◽  
Jonas Heidler ◽  
Ahmar Hasnain ◽  
Saleem Anwar ◽  
Hao Lu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect ◽  
Dirac Point ◽  
Aqueous Ammonia ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Technical Challenge ◽  
Catalytic Chemical Vapor Deposition ◽  
Graphene Layers

The paper addresses the technical challenge of producing doping-free transferred graphene layers produced by catalytic chemical vapor deposition (CVD), thereby preventing uncontrolled shift of the Dirac point in comprising field-effect transistors.

scholarly journals Influence of metal work function on the position of the Dirac point of graphene field-effect transistors

2009 ◽  
Vol 95 (24) ◽  
pp. 243105 ◽  
Author(s):  
Noejung Park ◽  
Bum-Kyu Kim ◽  
Jeong-O Lee ◽  
Ju-Jin Kim
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Dirac Point ◽  
Field Effect Transistors ◽  
Metal Work Function ◽  
Metal Work

Abnormal Dirac point shift in graphene field-effect transistors

2016 ◽  
Vol 3 (9) ◽  
pp. 095602 ◽  
Author(s):  
Shaoqing Wang ◽  
Zhi Jin ◽  
Xinnan Huang ◽  
Songang Peng ◽  
Dayong Zhang ◽  
...  
Keyword(s):  
Field Effect ◽  
Dirac Point ◽  
Field Effect Transistors

Detection of Bisphenol A Using DNA-Functionalized Graphene Field Effect Transistors Integrated in Microfluidic Systems

2018 ◽  
Vol 10 (28) ◽  
pp. 23522-23528 ◽  
Author(s):  
Shenghua Liu ◽  
Ying Fu ◽  
Can Xiong ◽  
Zhike Liu ◽  
Lei Zheng ◽  
...  
Keyword(s):  
Bisphenol A ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Functionalized Graphene ◽  
Microfluidic Systems

scholarly journals H2S and NH3 Detection with Langmuir-Schaefer Monolayer Organic Field-Effect Transistors

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 935
Author(s):  
Alexey Sizov ◽  
Askold Trul ◽  
Victoria Chekusova ◽  
Oleg Borshchev ◽  
Alexey Vasiliev ◽  
...  
Keyword(s):  
Field Effect ◽  
Gas Sensing ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Electrical Performance ◽  
Organic Field Effect Transistors ◽  
Ambient Conditions ◽  
Long Term Stability ◽  
Sensing Technology ◽  
Low Concentrations

In this work gas sensing properties of Langmuir-Schaefer monolayer organic field-effect transistors (LS OFETs) prepared from organosilicon derivative of [1]benzothieno[3,2-b][1]-benzothiophene (BTBT) have been investigated. The monolayer has been deposited using Langmuir-Schaefer method, which results in a uniform low-defect monolayer with excellent electrical performance, hole mobility up to 7 × 10−2 cm2 V−1 s−1, the threshold voltage around 0 V and on-off ratio of 104. Developed sensors demonstrate a long-term stability of a half-year storage under ambient conditions. Preliminary investigations demonstrated that the LS OFETs give instantaneous response on ammonia and hydrogen sulfide at low concentrations. The results reported open new perspectives for the OFET-based gas-sensing technology.

Isomeric indacenedibenzothiophenes: synthesis, photoelectric properties and ambipolar semiconductivity

2016 ◽  
Vol 4 (23) ◽  
pp. 5202-5206 ◽  
Author(s):  
Longbin Ren ◽  
Chunming Liu ◽  
Zhaohui Wang ◽  
Xiaozhang Zhu
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ambient Conditions ◽  
Crystal Field Effect ◽  
Photoelectric Properties ◽  
New Strategy

Isomeric indacenedibenzothiophenes featuring unique photoelectric properties were synthesized using a new strategy via double C–H activation cyclization. Single-crystal field-effect transistors based on IDBT-l-TIPSA delivered high and balanced ambipolar property under ambient conditions.

Gas Phase Electronic Sensing Using Single Wall Carbon Nanotube/Boipolymer Hybrids

2007 ◽  
Vol 1057 ◽  
Author(s):  
Samuel M Khamis ◽  
Michelle Chen ◽  
A.T. Charlie Johnson
Keyword(s):  
Carbon Nanotube ◽  
Gas Phase ◽  
Electronic Nose ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Adsorbed Species ◽  
Single Walled Carbon Nanotube ◽  
Volatile Organic ◽  
Hybrid Sensors ◽  
Electronic Sensing

ABSTRACTWe report on a class of hybrid sensors involving single-walled carbon nanotube field effect transistors (SWNT FET's) functionalized with various oligonucleotides. These oligonucleotides include ten sequences of single stranded DNA and two sequences of single stranded. We show that the sequence of the adsorbed oligonucleotide is the key component in determining the response that the hybrid will experience upon exposure to a panel of five volatile organic compounds (VOC's). Our sensors present a change in conductance, which is specific to the analyte being tested, and the adsorbed species. Our devices respond and recover quickly (seconds), and are reproducible over ∼100 cycles. These traits are highly desirable for the creation of a technology for use as an electronic nose. We present a database of responses involving hundreds of devices.

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