scholarly journals Influence of metal work function on the position of the Dirac point of graphene field-effect transistors

2009 ◽  
Vol 95 (24) ◽  
pp. 243105 ◽  
Author(s):  
Noejung Park ◽  
Bum-Kyu Kim ◽  
Jeong-O Lee ◽  
Ju-Jin Kim
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Dirac Point ◽  
Field Effect Transistors ◽  
Metal Work Function ◽  
Metal Work

Modeling of Channel Formation in Organic Field Effect Transistors

2001 ◽  
Vol 708 ◽  
Author(s):  
T. Li ◽  
P. P. Ruden ◽  
I. H. Campbell ◽  
D. L. Smith
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Channel Formation ◽  
Metal Work Function ◽  
Induced Charge Density ◽  
P Type ◽  
Electrostatic Modeling ◽  
Contact Metal

ABSTRACTWe report results of two-dimensional electrostatic modeling for (top-contact) organic field effect transistors, focusing on the formation of the conductive channel. The effect on channel formation of the choice of the source and drain contact metal is investigated. High work function metal (e.g., gold) source and drain contacts produce a conducting p-type region near these contacts. In contrast, low work function metal source and drain contacts (e.g., magnesium) lead to depleted regions. In the center of the device, between the source and drain contacts, the channel carrier density at a fixed gate bias is determined by the work function of the gate contact material, and is essentially independent of the metal used to form the source and drain contacts. The dependence of the transistor threshold voltage on the gate contact metal work function and the device implications of the spatial variation of the induced charge density are discussed.

scholarly journals Impact of band to band Tunneling on Transient performance of Dual Gate Tunnel Field Effect Transistor (TFET)

2019 ◽  
Vol 8 (9) ◽  
pp. 284-288
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Digital Circuit ◽  
Voltage Range ◽  
Metal Work Function ◽  
Band To Band Tunneling ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Metal Work

Tunnel Field Effect Transistor (TFET) is gated reverse biased P-I-N diode structured semiconductor device and can be considered as a reliable low power device. TCAD (Sentaurus 2D) simulations for various Gate metal work function (4.1-4.3 eV) shows that its ON-current (ION) arises from quantum mechanical band-to-band tunneling (B2BT) and observed that threshold Voltage (VT) for TFET decreases with increase in Gate metal work function. The thermionic emission of electrons in MOSFET limits the sub-threshold swing (SS) by 60 mV/dec whereas TFET has potential for low SS ie. SS<60 mV/dec. TCAD Simulations confirmed that that the Gate – Drain capacitance (Cgd) strongly follows the Gate capacitance (Cgg) all over the voltage range (0-0.9V) which increases the miller capacitance for TFET. It is investigated that for TFET, the injection of carriers into the channel is through B2BT which effectively couples the Gate charge to the Drain. A look up table based Verilog-A model is generated for TFET and used to simulate the static and dynamic behavior of TFET based digital circuit in Cadence spectre. Miller effect causes the peak voltage overshoots are noticed at the drain side during transient responses and can be responsible for dynamic power loss and high turn ON/OFF delay

Analysis of Metal Work-Function Modulation Effect in Reconfigurable Field-Effect Transistor

2020 ◽  
Vol 67 (9) ◽  
pp. 3745-3752
Author(s):  
Xianglong Li ◽  
Yabin Sun ◽  
Ziyu Liu ◽  
Xiaojin Li ◽  
Yanling Shi ◽  
...  
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Modulation Effect ◽  
Metal Work Function ◽  
Effect Transistor ◽  
Metal Work

Two-terminal vertical thyristor using Schottky contact emitter to improve thermal instability

Nano Futures ◽  
2021 ◽  
Author(s):  
Min-Won Kim ◽  
Ji-Hun Kim ◽  
Jun-Seong Park ◽  
Byoung-Seok Lee ◽  
Sangdong Yoo ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Work Function ◽  
Thermal Instability ◽  
Schottky Contact ◽  
Memory Cell ◽  
Cross Point ◽  
Operation Temperature ◽  
Metal Work Function ◽  
Metal Work ◽  
Contact Metal

Abstract In a two-terminal-electrode vertical thyristor, the latch-up and latch-down voltages are decreased when the memory operation temperature of the memory cells increases, resulting in a severe reliability issue (i.e., thermal instability). This study fundamentally solves the thermal instability of a vertical-thyristor by achieving a cross-point memory-cell array using a vertical-thyristor with a structure of vertical n++-emitter, p+-base, n+-base, and p++-emitter. The vertical-thyristor using a Schottky contact metal emitter instead of an n++-Si emitter significantly improves the thermal stability between 293 and 373 K. Particularly, the improvement degree of the thermal stability is increased significantly with the use of the Schottky contact metal work function. Because the thermal instability (i.e., degree of latch-up voltage decrement vs. memory operation temperature) decreases with an increase in the Schottky contact metal work function, the dependency of the forward current density between the Schottky contact metal and p+-Si based on the memory operation temperature reduces with increase in the Schottky contact metal work function. Consequently, a higher Schottky contact metal work function produces a higher degree of improvement in the thermal stability, i.e., W (4.50 eV), Ti (4.33 eV), Ta (4.25 eV), and Al (4.12 eV). Further research on the fabrication process of a Schottky contact metal emitter vertical-thyristor is essential for the fabrication of a 3-D cross-point memory-cell.

Influence of work function variation of metal gates on fluctuation of sub-threshold drain current for fin field-effect transistors with undoped channels

2014 ◽  
Vol 53 (4S) ◽  
pp. 04EC11 ◽  
Author(s):  
Takashi Matsukawa ◽  
Yongxun Liu ◽  
Kazuhiko Endo ◽  
Junichi Tsukada ◽  
Hiromi Yamauchi ◽  
...  
Keyword(s):  
Work Function ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Metal Gates
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