Sn vacancy engineering for enhancing the thermoelectric performance of two-dimensional SnS

2019 ◽  
Vol 7 (11) ◽  
pp. 3351-3359 ◽  
Author(s):  
Heng Quan Yang ◽  
Xiao Yang Wang ◽  
Hong Wu ◽  
Bin Zhang ◽  
Dan Dan Xie ◽  
...  

A significant enhancement in the thermoelectric performance of polycrystalline SnS resulting from increasing the hole concentration through Sn vacancy engineering.

Nano Energy ◽  
2019 ◽  
Vol 62 ◽  
pp. 212-219 ◽  
Author(s):  
Shan Huang ◽  
Ziyu Wang ◽  
Rui Xiong ◽  
Hongyu Yu ◽  
Jing Shi

ACS Omega ◽  
2019 ◽  
Vol 4 (18) ◽  
pp. 17773-17781 ◽  
Author(s):  
Xiaorui Chen ◽  
Yuhong Huang ◽  
Jing Liu ◽  
Hongkuan Yuan ◽  
Hong Chen

2020 ◽  
Vol 12 (41) ◽  
pp. 46212-46219
Author(s):  
Abhishek Patel ◽  
Deobrat Singh ◽  
Yogesh Sonvane ◽  
P. B. Thakor ◽  
Rajeev Ahuja

2017 ◽  
Vol 19 (27) ◽  
pp. 17560-17567 ◽  
Author(s):  
Tongzhou Wang ◽  
Congcong Liu ◽  
Fengxing Jiang ◽  
Zhaofen Xu ◽  
Xiaodong Wang ◽  
...  

The content of rGO could alter the carrier transport barrier, and the optimizing power factor was achieved at rGO–MS2 junctions.


2017 ◽  
Vol 121 (24) ◽  
pp. 13035-13042 ◽  
Author(s):  
Kai-Xuan Chen ◽  
Shu-Shen Lyu ◽  
Xiao-Ming Wang ◽  
Yuan-Xiang Fu ◽  
Yi Heng ◽  
...  

Nanoscale ◽  
2018 ◽  
Vol 10 (4) ◽  
pp. 1970-1977 ◽  
Author(s):  
Saravanan Muthiah ◽  
R. C. Singh ◽  
B. D. Pathak ◽  
Piyush Kumar Avasthi ◽  
Rishikesh Kumar ◽  
...  

An unprecedented ZT ∼ 0.82 realized in spark plasma sintered Al-doped MnSi1.73 HMS, melt spun at high cooling rates.


2015 ◽  
Vol 17 (35) ◽  
pp. 22872-22881 ◽  
Author(s):  
Xiaojian Tan ◽  
Hezhu Shao ◽  
Tianqi Hu ◽  
Guoqiang Liu ◽  
Jun Jiang ◽  
...  

The thermoelectric properties of two-dimensional graphyne sheets are investigated by using first-principles calculations and the Boltzmann transport equation method.


1998 ◽  
Vol 12 (29n31) ◽  
pp. 3306-3312 ◽  
Author(s):  
Laurent Manifacier ◽  
Gaston Collin ◽  
Nicole Blanchard

Systematic studies of the lead and yttrium substituted Bi-2212 phase were performed on various compositions ranging between 0 and 0.8 for Pb and between 0 and 0.9 for Y. Crystallographic measurements reveal that the two modulations observed in unleaded and highly Pb-substituted samples are closely linked, the main differences being that the commensurate component disappears in type II (lead type) modulation, along with the modulation of the Bi 3+ ion. We argue that this is due to a covalent bonding between Bi-O planes. The study of internal parameters, including modulation amplitudes, of the Bi2Sr2 ( Ca 1-x, Y x) Cu2O 8+x/2+δ system reveals three distinct regimes with very different behaviors, corresponding to the overdoped, underdoped and insulating regimes. By comparing these results to the variation of the diamagnetic shielding with Y and Pb contents, we conclude that yttrium and lead affect more the mobility of the holes than the hole concentration itself. Y seems to induce, rather than a metal/insulator transition, a switch from a three-dimensional to a two-dimensional regime with a hole localization in the CuO 2 planes.


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