New group V graphyne: two-dimensional direct semiconductors with remarkable carrier mobilities, thermoelectric performance, and thermal stability

2020 ◽  
Vol 12 ◽  
pp. 100164 ◽  
Author(s):  
Y. Wu ◽  
C. Ma ◽  
Y. Chen ◽  
B. Mortazavi ◽  
Z. Lu ◽  
...  
2021 ◽  
Vol 13 (38) ◽  
pp. 45736-45743
Author(s):  
Jian Zhang ◽  
Cheng Zhang ◽  
Ting Zhu ◽  
Yonggao Yan ◽  
Xianli Su ◽  
...  

2017 ◽  
Vol 3 ◽  
pp. 72-83 ◽  
Author(s):  
Jian Yang ◽  
Guiwu Liu ◽  
Zhongqi Shi ◽  
Jianping Lin ◽  
Xiang Ma ◽  
...  

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Jiao-Jing Shao ◽  
Kalyan Raidongia ◽  
Andrew R. Koltonow ◽  
Jiaxing Huang

ACS Omega ◽  
2019 ◽  
Vol 4 (18) ◽  
pp. 17773-17781 ◽  
Author(s):  
Xiaorui Chen ◽  
Yuhong Huang ◽  
Jing Liu ◽  
Hongkuan Yuan ◽  
Hong Chen

2020 ◽  
Vol 12 (41) ◽  
pp. 46212-46219
Author(s):  
Abhishek Patel ◽  
Deobrat Singh ◽  
Yogesh Sonvane ◽  
P. B. Thakor ◽  
Rajeev Ahuja

2017 ◽  
Vol 19 (27) ◽  
pp. 17560-17567 ◽  
Author(s):  
Tongzhou Wang ◽  
Congcong Liu ◽  
Fengxing Jiang ◽  
Zhaofen Xu ◽  
Xiaodong Wang ◽  
...  

The content of rGO could alter the carrier transport barrier, and the optimizing power factor was achieved at rGO–MS2 junctions.


2017 ◽  
Vol 121 (24) ◽  
pp. 13035-13042 ◽  
Author(s):  
Kai-Xuan Chen ◽  
Shu-Shen Lyu ◽  
Xiao-Ming Wang ◽  
Yuan-Xiang Fu ◽  
Yi Heng ◽  
...  

MRS Advances ◽  
2018 ◽  
Vol 3 (45-46) ◽  
pp. 2809-2814 ◽  
Author(s):  
Naoki Higashitarumizu ◽  
Hayami Kawamoto ◽  
Keiji Ueno ◽  
Kosuke Nagashio

ABSTRACTMechanical exfoliation is performed to fabricate ultrathin SnS layers, and chemical/thermal stability of SnS layers is discussed in comparison with GeS, toward piezoelectric nanogenerator application. Both SnS and GeS are difficult to be exfoliated under 10 nm using tape exfoliation due to strong interlayer ionic bonding by lone pair electrons in Sn or Ge atoms. Au-mediated exfoliation enables to fabricate larger-scale ultrathin SnS and GeS layers thinner than 10 nm owing to strong semi-covalent bonding between Au and S atoms, but GeS surface immediately degrades during Au etching in an oxidative KI/I2 solution. Although the surface of SnS after the Au-mediated exfoliation reveals several-nm oxide layer of SnOx, the surface morphology retains the flatness unlike the case of GeS. The SnS layers are more robust than GeS against the thermal annealing as well as the chemical treatment, suggesting that SnOx works as a passivation layer for SnS. Self-passivated SnS monolayer can be obtained by a controlled post-oxidation.


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