scholarly journals Near-infrared organic photodetectors based on bay-annulated indigo showing broadband absorption and high detectivities up to 1.1 μm

2018 ◽  
Vol 6 (43) ◽  
pp. 11645-11650 ◽  
Author(s):  
Frederik Verstraeten ◽  
Sam Gielen ◽  
Pieter Verstappen ◽  
Jurgen Kesters ◽  
Epimitheas Georgitzikis ◽  
...  

Organic photodetectors made from a BAI-based near-infrared copolymer reach high detectivities of 1012 Jones and low dark currents of 10−7 A cm−2.

2020 ◽  
Vol 59 (11) ◽  
pp. 110906
Author(s):  
Juan Shen ◽  
Yong Ren ◽  
Xinxin Zhu ◽  
Min Mao ◽  
Quan Zhou ◽  
...  

Photonics ◽  
2021 ◽  
Vol 8 (4) ◽  
pp. 114
Author(s):  
Steve Kamau ◽  
Safaa Hassan ◽  
Khadijah Alnasser ◽  
Hualiang Zhang ◽  
Jingbiao Cui ◽  
...  

It is challenging to realize the complete broadband absorption of near-infrared in thin optical devices. In this paper, we studied high light absorption in two devices: a stack of Au-pattern/insulator/Au-film and a stack of Au-pattern/weakly-absorbing-material/Au-film where the Au-pattern was structured in graded photonic super-crystal. We observed multiple-band absorption, including one near 1500 nm, in a stack of Au-pattern/spacer/Au-film. The multiple-band absorption is due to the gap surface plasmon polariton when the spacer thickness is less than 30 nm. Broadband absorption appears in the near-infrared when the insulator spacer is replaced by a weakly absorbing material. E-field intensity was simulated and confirmed the formation of gap surface plasmon polaritons and their coupling with Fabry–Pérot resonance.


2020 ◽  
pp. 2001784
Author(s):  
Yazhong Wang ◽  
Bernhard Siegmund ◽  
Zheng Tang ◽  
Zaifei Ma ◽  
Jonas Kublitski ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Jonas Kublitski ◽  
Axel Fischer ◽  
Shen Xing ◽  
Lukasz Baisinger ◽  
Eva Bittrich ◽  
...  

AbstractDetection of electromagnetic signals for applications such as health, product quality monitoring or astronomy requires highly responsive and wavelength selective devices. Photomultiplication-type organic photodetectors have been shown to achieve high quantum efficiencies mainly in the visible range. Much less research has been focused on realizing near-infrared narrowband devices. Here, we demonstrate fully vacuum-processed narrow- and broadband photomultiplication-type organic photodetectors. Devices are based on enhanced hole injection leading to a maximum external quantum efficiency of almost 2000% at −10 V for the broadband device. The photomultiplicative effect is also observed in the charge-transfer state absorption region. By making use of an optical cavity device architecture, we enhance the charge-transfer response and demonstrate a wavelength tunable narrowband photomultiplication-type organic photodetector with external quantum efficiencies superior to those of pin-devices. The presented concept can further improve the performance of photodetectors based on the absorption of charge-transfer states, which were so far limited by the low external quantum efficiency provided by these devices.


2018 ◽  
Vol 30 (34) ◽  
pp. 1802359 ◽  
Author(s):  
Sungjun Park ◽  
Kenjiro Fukuda ◽  
Ming Wang ◽  
Chulhyo Lee ◽  
Tomoyuki Yokota ◽  
...  

2020 ◽  
Vol 83 ◽  
pp. 105739 ◽  
Author(s):  
Kaixuan Yang ◽  
Jian Wang ◽  
Zijin Zhao ◽  
Fenggui Zhao ◽  
Kai Wang ◽  
...  

2019 ◽  
Vol 9 (18) ◽  
pp. 3677 ◽  
Author(s):  
Maurizio Casalino

In recent years, graphene has attracted much interest due to its unique properties of flexibility, strong light-matter interaction, high carrier mobility and broadband absorption. In addition, graphene can be deposited on many substrates including silicon with which is able to form Schottky junctions, opening the path to the realization of near-infrared photodetectors based on the internal photoemission effect where graphene plays the role of the metal. In this work, we review the very recent progress of the near-infrared photodetectors based on Schottky junctions involving graphene. This new family of device promises to overcome the limitations of the Schottky photodetectors based on metals showing the potentialities to compare favorably with germanium photodetectors currently employed in silicon photonics.


2020 ◽  
Vol 12 (15) ◽  
pp. 17769-17775 ◽  
Author(s):  
Guanghong Liu ◽  
Tengfei Li ◽  
Xiaowei Zhan ◽  
Hongbin Wu ◽  
Yong Cao

2018 ◽  
Vol 6 (14) ◽  
pp. 3499-3513 ◽  
Author(s):  
Xiaodong Liu ◽  
Yiwei Lin ◽  
Yingjie Liao ◽  
Jiazun Wu ◽  
Yonghao Zheng

Both broadband and narrowband organic photodetectors can be realized due to the easily tunable optical/electronic properties of organic semiconductors.


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