Low temperature and rapid formation of high quality metal oxide thin film via a hydroxide-assisted energy conservation strategy

2018 ◽  
Vol 6 (37) ◽  
pp. 9941-9949 ◽  
Author(s):  
Meng-Huan Jao ◽  
Chien-Chen Cheng ◽  
Chun-Fu Lu ◽  
Kai-Chi Hsiao ◽  
Wei-Fang Su
Keyword(s):  
Metal Oxide ◽  
Conservation Strategy ◽  
Oxide Thin Film ◽  
High Quality ◽  
Metal Oxide Thin Films ◽  
Thermal Budget ◽  
Rapid Formation ◽  
Metal Oxide Thin Film ◽  
Low Thermal Budget ◽  
Quality Metal

We develop a universal hydroxide-assisted strategy for the low thermal budget efficient fabrication of high quality metal oxide thin films.

scholarly journals High-Throughput Open-Air Plasma Activation of Metal-Oxide Thin Films with Low Thermal Budget

2018 ◽  
Vol 10 (43) ◽  
pp. 37223-37232 ◽  
Author(s):  
Young Jun Tak ◽  
Florian Hilt ◽  
Scott Keene ◽  
Won-Gi Kim ◽  
Reinhold H. Dauskardt ◽  
...  
Keyword(s):  
Thin Films ◽  
Metal Oxide ◽  
High Throughput ◽  
Air Plasma ◽  
Oxide Thin Films ◽  
Metal Oxide Thin Films ◽  
Thermal Budget ◽  
Plasma Activation ◽  
Low Thermal Budget

scholarly journals Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film Transistors

2022 ◽  
Vol 2 ◽  
Author(s):  
Sami Bolat ◽  
Evangelos Agiannis ◽  
Shih-Chi Yang ◽  
Moritz H. Futscher ◽  
Abdesselam Aribia ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Aluminum Oxide ◽  
Thin Film Transistors ◽  
Low Cost ◽  
Charge Trapping ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Thermal Budget ◽  
Metal Oxide Thin Film

Solution processing and low-temperature annealing (T < 300°C) of the precursor compounds promise low-cost manufacturing for future applications of flexible oxide electronics. However, thermal budget reduction comes at the expense of increased charge trapping residuals in the dielectric layers, which result in hysteretic switching of transistors. This work reports on a novel bilayer dielectric scheme combining aluminum oxide (AlOx) as a positive charge trapping insulator and yttrium aluminum oxide (YAlOx) as a negative charge trapping dielectric to obtain hysteresis free switching in the solution-processed metal-oxide thin-film transistors. Devices were processed at a thermal budget of 250°C, without an encapsulation layer. The presence of H+ and OH− in the AlOx were found responsible for the hysteresis in the switching, which was suppressed successfully with the thickness optimization of the YAlOx in the dielectric stack. Fabricated devices yield ON/OFF ratios of 106, sub-pA level gate leakage currents, a subthreshold swing of 150 mV/decade, and field-effect mobility of 1.5 cm2/V-sec.

Thermal Budget Reduction in Metal Oxide Thin-Film Transistors via Planarization Process

2020 ◽  
pp. 1-1
Author(s):  
Sunbin Deng ◽  
Wei Zhong ◽  
Shoucheng Dong ◽  
Rongsheng Chen ◽  
Guijun Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Thermal Budget ◽  
Budget Reduction ◽  
Metal Oxide Thin Film ◽  
Planarization Process

Laser annealing of metal oxide thin film transistor

2020 ◽  
Vol 35 (12) ◽  
pp. 1211-1221
Author(s):  
Hong-long NING ◽  
◽  
Yu-xi DENG ◽  
Jian-lang HUANG ◽  
Zi-long LUO ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film
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