Polymeric iodobismuthates {[Bi3I10]} and {[BiI4]} with N-heterocyclic cations: promising perovskite-like photoactive materials for electronic devices

2019 ◽  
Vol 7 (11) ◽  
pp. 5957-5966 ◽  
Author(s):  
Andrey N. Usoltsev ◽  
Moneim Elshobaki ◽  
Sergey A. Adonin ◽  
Lyubov A. Frolova ◽  
Tatiyana Derzhavskaya ◽  
...  
Keyword(s):  
Electronic Devices ◽  
Semiconductor Materials ◽  
Photovoltaic Devices ◽  
Photoactive Materials ◽  
Heterocyclic Cations

Structurally different complex bismuth iodides with 1D anionic frameworks were designed and explored as semiconductor materials for photovoltaic devices.

scholarly journals Determination of Technological Features of a Solar Photovoltaic Cell Made of Monocrystalline Silicon P+PNN+

2019 ◽  
Vol 2019 ◽  
pp. 1-14 ◽  
Author(s):  
Cristian-Petre Fluieraru ◽  
Gabriel Predușcă ◽  
Horia Andrei ◽  
Emil Diaconu ◽  
Petru Adrian Cotfas ◽  
...  
Keyword(s):  
Solar Cell ◽  
Renewable Energy Sources ◽  
Electronic Devices ◽  
Photovoltaic Cell ◽  
Monocrystalline Silicon ◽  
Semiconductor Materials ◽  
Solar Photovoltaic ◽  
Photovoltaic Solar Cell ◽  
Photovoltaic Solar Cells

The development in the field of semiconductor materials and electronic devices has a great impact on systems with renewable energy sources. Determination of the functional parameters of photovoltaic solar cells is essential for the subsequent usage of these semiconductor devices. Research was made on type P+PNN+ monocrystalline silicon wafers. Crystallographic measurements of the photovoltaic solar cell were made by means of FESEM-FIB Auriga Workstation. Initial data were selected from the study of models found in the specialized literature. The experimental results were compared to classical mathematical models. Measurements made on the photovoltaic solar cell were realised in laboratory conditions on the NI-ELVIS platform produced by National Instruments.

MOCVD challenge for III-V semiconductor materials for photonic and electronic devices on alternative substrates

1988 ◽  
Vol 93 (1-4) ◽  
pp. 776-781 ◽  
Author(s):  
M. Razeghi ◽  
M. Defour ◽  
F. Omnes ◽  
P. Maurel ◽  
E. Bigan ◽  
...  
Keyword(s):  
Electronic Devices ◽  
Semiconductor Materials ◽  
Alternative Substrates

Ion Implantation For High Performance Ill-V Jfets And Hfets

1996 ◽  
Vol 421 ◽  
Author(s):  
J. C. Zolper ◽  
A. G. Baca ◽  
M. E. Sherwin ◽  
J. F. Klem
Keyword(s):  
Ion Implantation ◽  
Conduction Band ◽  
Density Of States ◽  
High Performance ◽  
Electronic Devices ◽  
Semiconductor Materials ◽  
Comprehensive Treatment ◽  
Enabling Technology ◽  
Deep Donor ◽  
P Type

AbstractIon implantation has been an enabling technology for the realization of many high performance electronic devices in III-V semiconductor materials. We report on advances in ion implantation processing technology for application to GaAs JFETs, AlGaAs/GaAs HFETs, and InGaP or InA1P-barrier HFETs. In particular, the GaAs JFET has required the development of shallow p-type implants using Zn or Cd with junction depths down to 35 nm after the activation anneal. Implant activation and ionization issues for AlGaAs will be reported along with those for InGaP and InAlP. A comprehensive treatment of Si-implant doping of AlGaAs is given based on the donor ionization energies and conduction band density-of-states dependence on Al-composition. Si and Si+P implants in InGaP are shown to achieve higher electron concentrations than for similar implants in AlGaAs due to the absence of the deep donor (DX) level. An optimized P co-implantation scheme in InGaP is shown to increase the implanted donor saturation level by 65%.

Nanorods and Nanotubes for Solar Cells

2008 ◽  
Vol 8 (1) ◽  
pp. 131-148 ◽  
Author(s):  
V. V. Kislyuk ◽  
O. P. Dimitriev
Keyword(s):  
Carbon Nanotubes ◽  
Solar Cells ◽  
Charge Transport ◽  
Effective Charge ◽  
Photovoltaic Performance ◽  
Photovoltaic Cells ◽  
Photovoltaic Devices ◽  
Top Down ◽  
Advantages And Disadvantages ◽  
Photoactive Materials

Nanorods and nanotubes as photoactive materials as well as electrodes in photovoltaic cells have been launched a few years ago, and the literature in this field started to appear only recently. The first steps have shown both advantages and disadvantages of their application, and the main expectation associated with their effective charge transport has not been realized completely. This article aims to review both the first and the recent tendencies in the development and application of nanorod and nanotube materials in photovoltaic cells. Two basic techniques of synthesis of crystalline nanorod structures are described, the top-down and bottom-up approaches, respectively. Design and photovoltaic performance of solar cells based on various semiconductor nanorod materials, such as TiO2, ZnO, CdS, CdSe, CdTe, CuO, Si are presented and compared with respective solar cells based on semiconductor nanoparticles. Specific of synthesis and application of carbon nanotubes in photovoltaic devices is also reviewed.

scholarly journals Automation Of An I-V Characterization System

2010 ◽  
Vol 8 (02) ◽  
Author(s):  
J. R. Noriega ◽  
A. Vera-Marquina ◽  
C. Acosta Enríquez
Keyword(s):  
Virtual Instrument ◽  
Electronic Devices ◽  
Research Work ◽  
Vlsi Design ◽  
Semiconductor Materials ◽  
Labview Software ◽  
Research And Teaching ◽  
Discrete Device ◽  
Programming Device

In this paper, an accurate I-V virtual instrument (VI) that has been developed to characterize electronic devices for research and teaching purposes is demonstrated. The virtual instrument can be used to highlight principles of measurement, instrumentation, fundamental principles of electronics, VI programming, device testing and characterization in wafer or discrete device level. It consists of a Keithley electrometer, model 6514, a programmable power supply BK Precision, model 1770, a Keithley source meter, model 2400-LV, an Agilent digital multimeter, model 34401, a PC computer and LabVIEW software. The instruments are interconnected using an IEEE 488 protocol. The characteristic VI devices graphs are generated from measured data previous computational processing. The instrument is used in basic courses of physical electronics as well as in advance curses of VLSI design and in research work for characterization of semiconductor materials and devices. This paper describes the VI instrument design, implementation and characterization experiments.

scholarly journals Improving the Photovoltaic Parameters of a-Si/CZTS Solar Cells

2021 ◽  
Author(s):  
H. Bitam ◽  
B. Zaidi ◽  
B. Hadjoudja ◽  
C. Shekhar ◽  
S. Gagui ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Natural Disasters ◽  
Electronic Devices ◽  
Research Work ◽  
Energy Generation ◽  
Photovoltaic Device ◽  
Photovoltaic Devices ◽  
Photovoltaic Parameters ◽  
Radical Solution

Abstract Due to the high need for energy generation for today’s electronic devices as well as with the natural disasters occurring at the increased frequency, intensity and duration, it becomes essential to explore this scientific area for the sustainability of the society. The benefit of a composite a-Si/CZTS photovoltaic devices for energy generation has not yet been investigated. Addressing the problem and providing a radical solution has been attempted in this research. This research reports the calculated parameters for the solar cell based on the new arrey of the layers, employing a-Si/CZTS. Adapted a-Si/CZTS configuration-based solar cell, debutant analysis of the parameters, and address the challenges that impeded the efficiency of the photovoltaic device are the chief novelty of this research work.

Thermal Design, Analysis and Verification of Chip-Level MCM with Properties of Semiconductor Materials

2012 ◽  
Vol 625 ◽  
pp. 280-286
Author(s):  
Jun Hui Wu ◽  
Quan Zhou ◽  
Qiang Zhou ◽  
Jie Chen ◽  
Hui Ping Si ◽  
...  
Keyword(s):  
Computer Simulation ◽  
Failure Rate ◽  
Integrated Circuit ◽  
Electronic Devices ◽  
Thermal Design ◽  
Circuit Board ◽  
Junction Temperature ◽  
Semiconductor Materials ◽  
Finite Element Analyses ◽  
Reliability Indicators

A lot of practice had proved that the failure rate can be used as the reliability indicators of MCM (Multi-Chip Module). The lower the junction temperature of the semiconductor integrated circuit device in MCM, the lower the failure rate of components was, thus the higher the reliability of MCM. Therefore, in order to measure the junction temperature of the semiconductor components of MCM, computer simulation is needed in the stage of design，which was essential for improving the reliability of MCM’s encapsulation and even the whole electronic machine system. In this paper, we tried to thermal design the high-power heating devices-MCM of the multi-functional electronic devices. First, the cooling principles of MCM encapsulation were introduced. And then based on the design principles and precautions of MCM, we designed an MCM encapsulation for cooling analyses of ANSYS. The results of finite element analyses showed the reasonableness of the design of MCM, and combined with the different substrate materials and circuit board materials, further discusses about improved cooling capability of MCM were expressed in this paper. At last, we got the desired effect.

scholarly journals A Computer Simulation of Lithium Doped in nanosheet zinc oxide.

2021 ◽  
pp. 110-116
Author(s):  
Abdalla Abdelrahman Mohamed ◽  
Bedor Mohammed Khairalla
Keyword(s):  
Zinc Oxide ◽  
Band Gap ◽  
Low Cost ◽  
Electronic Devices ◽  
Wide Band ◽  
Semiconductor Materials ◽  
High Resistivity ◽  
Oxide Surface ◽  
Half Metal ◽  
Good Agreement

The capabilities of computer through the methodologies of scientific computing used to solve many manufacturing difficulties of semiconductor materials, across all disciplines, because it is low cost and the availability of resources. In this paper, investigation of unique electronic property of zinc oxide sheet, which can be an attractive semiconductor material for many electronic devices applications, is carried out. The electronic structure of zinc oxide surface and the effect of substituting lithium atoms using CRYSTAL06 code showed that the bulk ZnO band gap ≈ 3.3eV which is in good agreement with experimental results≈3.4eV. After generating slab structure, the band gap has been increased to 5.5eV, exhibiting high resistivity surface. Substituting of lithium to slab has decreased band gap to 4.4eV. The results shows that there is reduction in band-gap and decreases in resistivity, predicting that Small amount of Lithium could change the zinc oxide from wide band semiconductor to half-metal compound.

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