Narrow band gap and high mobility of lead-free perovskite single crystal Sn-doped MA3Sb2I9

2018 ◽  
Vol 6 (42) ◽  
pp. 20753-20759 ◽  
Author(s):  
Dianxing Ju ◽  
Xiaomei Jiang ◽  
Hang Xiao ◽  
Xi Chen ◽  
Xiaobo Hu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Band Gap ◽  
Single Crystals ◽  
Light Absorption ◽  
Carrier Mobility ◽  
Narrow Band ◽  
High Mobility ◽  
Absorption Peak ◽  
Lead Free

Lead free Sn-doped MA3Sb2I9 single crystals have been obtained with a significant red-shifted light absorption peak and two-fold enhancement of the carrier mobility than that of MA3Sb2I9.

Organic thin films with charge-carrier mobility exceeding that of single crystals

2017 ◽  
Vol 5 (39) ◽  
pp. 10313-10319 ◽  
Author(s):  
Zachary A. Lamport ◽  
Ruipeng Li ◽  
Chao Wang ◽  
William Mitchell ◽  
David Sparrowe ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Charge Carrier ◽  
Single Crystal ◽  
Single Crystals ◽  
Carrier Mobility ◽  
High Mobility ◽  
Organic Thin Films ◽  
Charge Carrier Mobility

Through processing, spin-cast OTFTs outperform single-crystal OFETs by making accessible the high-mobility direction in the same crystal structure.

The Characteristic of the La3Ga5SiO14 Single Crystal Grown by Vertical Bridgman Method in Ar Atmosphere

2006 ◽  
Vol 510-511 ◽  
pp. 842-845 ◽  
Author(s):  
Noriko Bamba ◽  
Kentaro Kato ◽  
Toshinori Taishi ◽  
Takayuki Hayashi ◽  
Keigo Hoshikawa ◽  
...  
Keyword(s):  
Melting Point ◽  
Single Crystal ◽  
Single Crystals ◽  
Room Temperature ◽  
Color Change ◽  
Piezoelectric Materials ◽  
Lead Free ◽  
Piezoelectric Constant ◽  
Interstitial Oxygen ◽  
Vertical Bridgman

Langasite (La3Ga5SiO14: denoted by LGS) single crystal is one of the lead free piezoelectric materials with high piezoelectricity that is maintained up to its melting point (1470°C). Although LGS single crystals have usually been grown by Czochralski (CZ) method in oxygen contained atmosphere to prevent evaporation of Ga, they were grown by the vertical Bridgman (VB) method in Ar atmosphere without oxygen, and their properties were evaluated in this work. Transparent and colorless LGS single crystals were successfully obtained without Ga evaporation by the VB method in Ar atmosphere, and their resistivity at room temperature was much higher than that grown by conventional CZ method. Piezoelectric constant d11 of the crystal grown by the VB method was 6 x 10-12 C/N, which was close to that of the crystal grown by CZ method. The colorless transparent LGS single crystal turned to orange and its resistivity decreased by annealing in air. Since an orange-colored transparent LGS single crystal has been grown by conventional CZ method, this indicates that color change and the resistivity decrease of LGS crystal is caused by extra interstitial oxygen atoms in the crystal.

scholarly journals CH3NH3PbI3 perovskite single crystals: surface photophysics and their interaction with the environment

2015 ◽  
Vol 6 (12) ◽  
pp. 7305-7310 ◽  
Author(s):  
G. Grancini ◽  
V. D'Innocenzo ◽  
E. R. Dohner ◽  
N. Martino ◽  
A. R. Srimath Kandada ◽  
...  
Keyword(s):  
Single Crystal ◽  
Band Gap ◽  
Single Crystals ◽  
Optical Band Gap ◽  
Structural Inhomogeneity ◽  
Highly Sensitive ◽  
Micrometer Scale ◽  
Local Modulation

Structural inhomogeneity on a micrometer-scale across a CH3NH3PbI3 single crystal is responsible for a local modulation of the optical band gap, which is also highly sensitive to humidity.

scholarly journals Adjustable Positive-Negative Signal in Self-Driven Photodetector based on Cubic CH3NH3PbI3 Large Single Crystal

2021 ◽  
Author(s):  
Xuewei Fu ◽  
Yunying Wang ◽  
Huawei Zhou ◽  
Yan Chen ◽  
Chen Wang ◽  
...  
Keyword(s):  
Response Time ◽  
Single Crystal ◽  
Band Gap ◽  
Single Crystals ◽  
Photocurrent Density ◽  
Large Single Crystal ◽  
Orientation Disorder ◽  
Octahedral Cavity ◽  
First Time ◽  
Negative Signal

<p><b>In this study, for the first time, self-driven photodetector based on cubic CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> large single crystal </b><b>(C-MAPbI<sub>3 </sub>LSC) </b><b>with adjustable positive-negative signal is fabricated. </b><b>The preparation of MAPbI<sub>3 </sub>large single crystal (MAPbI<sub>3 </sub>LSC) is realized by the method of growth-drop-growth (GDG). </b><b>The band gap of </b><b>MAPbI<sub>3 </sub></b><b>single crystals </b><b>with Pm-3m (221) space group (6.134×6.134×6.134 Å, 90.00 x 90.00 x 90.00) </b><b>is 1.58 eV.</b> <b>CH<sub>3</sub>NH<sub>3</sub><sup>+</sup> cation is orientation-disorder </b><b>within the perovskite cubo-octahedral cavity.</b><b> The photocurrent density at 803 nm of the</b><b> C-MAPbI<sub>3 </sub>LSC</b><b> photodetector under different bias voltages is the highest under different wavelength. The </b><b>responsivities (R), response time, external quantum efficiencies (EQE) and the detectivity (D) for </b><b>C-MAPbI<sub>3 </sub>LSC</b><b> photodetector at 803 nm wavelength with 1 W m<sup>-2</sup></b><b>, respectively, is </b><b>508.7 µA/mW, 0.1338 ms, 79.6% and 8.64*10<sup>11</sup> Jones. Notably, </b><b>the C-MAPbI<sub>3 </sub>LSC photodetector can be self-driven under 0 V bias voltage, in particular, the positive and negative values of the photocurrent can be adjusted. The proposed mechanism of poling inducing built-in potential is explained adjustable positive-negative signal in self-driven photodetector based on cubic CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> large single crystal.</b><b></b></p>

Synthesis of narrow band gap SnTe nanocrystals: nanoparticles and single crystal nanowires via oriented attachment

CrystEngComm ◽  
2010 ◽  
Vol 12 (12) ◽  
pp. 4275 ◽  
Author(s):  
Jiajia Ning ◽  
Kangkang Men ◽  
Guanjun Xiao ◽  
Bo Zou ◽  
Li Wang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Band Gap ◽  
Narrow Band ◽  
Oriented Attachment

Short-channel and high-mobility p- and n-type organic single-crystal transistors with air-gap structures

2012 ◽  
Vol 1402 ◽  
Author(s):  
M. Uno ◽  
T. Uemura ◽  
K. Miwa ◽  
A. Facchetti ◽  
J. Takeya
Keyword(s):  
Single Crystal ◽  
High Speed ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Channel Length ◽  
Air Gap ◽  
Short Channel ◽  
Glass Substrates ◽  
Channel Lengths

ABSTRACTIn an effort to realize high-speed organic logic components, p- and n-type single-crystal organic field-effect transistors (SC-OFETs) were fabricated using air-gap structures with channel lengths as short as several μm. High carrier mobility of about 10 cm2/Vs is demonstrated in rubrene SC-OFETs even with the short channel length of 6 μm, using Si-based microstructures. The contact resistance is estimated to be 450 Ohm cm, which is only 5% of the total channel resistance between source and drain electrodes. Performances of n-type air-gap devices based on PDIF-CN2 are also demonstrated exhibiting electron transport with the carrier mobility of about 2 cm2/Vs. Furthermore, micron-scale air-gap structures are fabricated using insulating materials on glass substrates to reduce parasitic gate capacitance. The cut-off frequency of this rubrene air-gap device is measured to be as high as 8 MHz with applied drain voltage VD of 15 V. These techniques are promising to be applicable to next-generation organic high-speed logic circuits.

Highly efficient heterojunction solar cells enabled by edge-modified tellurene nanoribbons

2020 ◽  
Vol 22 (48) ◽  
pp. 28414-28422
Author(s):  
Yunzhi Gao ◽  
Kai Wu ◽  
Wei Hu ◽  
Jinlong Yang
Keyword(s):  
Solar Cells ◽  
Visible Light ◽  
Band Gap ◽  
Light Absorption ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
Visible Light Absorption ◽  
Heterojunction Solar Cells ◽  
High Carrier Mobility ◽  
High Carrier

Tellurene, a two-dimensional (2D) semiconductor, meets the requirements for optoelectronic applications with desirable properties, such as a suitable band gap, high carrier mobility, strong visible light absorption and high air stability.

scholarly journals Optical applications of wide-band-gap gallium oxide

2014 ◽  
Vol 70 (a1) ◽  
pp. C1411-C1411
Author(s):  
Takayoshi Oshima
Keyword(s):  
Single Crystal ◽  
Band Gap ◽  
Single Crystals ◽  
Water Splitting ◽  
Wide Band ◽  
Crystal Plate ◽  
Wide Band Gap ◽  
Solar Blind ◽  
Single Crystal Plate ◽  
Optical Applications

Ga2O3 have been attracting much attention as a wide-band-gap semiconductor owing to a large band-gap of 4.8 eV and the availability of high-quality and large-sized single crystals, which are advantageous over conventional wide-band-gap semiconductors. This presentation focuses on optical applications using Ga2O3 single crystals: photodetectors and photoelectrodes, both of which show interesting and promising properties[1,2]. As for photodetectors, a PEDOT-PSS Schottky and In ohmic contacts were prepared on front and back surfaces of a n-type Ga2O3 single crystal plate, respectively, to fabricate a photovoltaic detector. The detector operated at zero bias (V = 0 V) exhibited high responsivities in the solar-blind region (< 280 nm). Incident photon to current conversion efficiency (IPCE) was as high as 21% at 240 nm and a 240-to-300 nm rejection ratio was as large as 10^4, indicating that the detector can be applicable for flame sensing. In fact, the detector successfully detected a flame by distinguishing several nW/cm2 weak solar-blind light from a flame under a strong fluorescent lamp illumination without using visible-cut filters. As for photoelectrodes, an n-type Ga2O3 single crystal plate with In ohmic contact on the back side was used for characterization. From impedance analysis, the conduction and valence band-edges in aqueous solutions were found to be 1.1 V higher and 2.5 V lower than the H+/H2 and O2/H2O redox potentials, respectively. These potential differences, or overpotentials for water splitting, are large enough for photolysis of water. When the photoelectrode was excited by photons, H2 and O2 gases evolved from a counter Pt electrode and the photoelectrode, respectively. The highest IPCE of 36% was obtained at 240 nm. Stoichiometric water splitting was demonstrated at V = 1V without using co-catalysts. These results encourage the notion of Ga2O3 optical applications and also contribute for developing Ga2O3 semiconductor studies.

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