scholarly journals CH3NH3PbI3 perovskite single crystals: surface photophysics and their interaction with the environment

2015 ◽  
Vol 6 (12) ◽  
pp. 7305-7310 ◽  
Author(s):  
G. Grancini ◽  
V. D'Innocenzo ◽  
E. R. Dohner ◽  
N. Martino ◽  
A. R. Srimath Kandada ◽  
...  
Keyword(s):  
Single Crystal ◽  
Band Gap ◽  
Single Crystals ◽  
Optical Band Gap ◽  
Structural Inhomogeneity ◽  
Highly Sensitive ◽  
Micrometer Scale ◽  
Local Modulation

Structural inhomogeneity on a micrometer-scale across a CH3NH3PbI3 single crystal is responsible for a local modulation of the optical band gap, which is also highly sensitive to humidity.

scholarly journals Temperature-Dependent Optical Band Gap in CsPbBr3, MAPbBr3, and FAPbBr3 Single Crystals

2020 ◽  
Vol 11 (7) ◽  
pp. 2490-2496 ◽  
Author(s):  
Giovanni Mannino ◽  
Ioannis Deretzis ◽  
Emanuele Smecca ◽  
Antonino La Magna ◽  
Alessandra Alberti ◽  
...  
Keyword(s):  
Band Gap ◽  
Single Crystals ◽  
Optical Band Gap ◽  
Temperature Dependent

Growth, Optical Adsorption and Resistivity of (Ga0.6In0.4)2Se3 and (Ga0.594In0.396Er0.01)2Se3 Single Crystals

2013 ◽  
Vol 200 ◽  
pp. 50-53
Author(s):  
Inna A. Ivashchenko ◽  
Volodumur V. Halyan ◽  
Irina V. Danylyuk ◽  
Volodumur Z. Pankevuch ◽  
Georgij Y. Davydyuk ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
Phase Diagram ◽  
Differential Thermal Analysis ◽  
Band Gap ◽  
Single Crystals ◽  
Optical Band Gap ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vertical Bridgman ◽  
Xrd Method

The phase diagram of the Ga2Se3–In2Se3 system was investigated by differential-thermal analysis (DTA) and X-ray diffraction (XRD) method. The single crystals from the area of existence of the γ2 phase with the compositions (Ga0.6In0.4)2Se3 and (Ga0.594In0.396Er0.01)2Se3 were grown by a vertical Bridgman method. Absorption spectra of the grown crystals were studied. The estimated optical band gap is 1.95±0. 01 eV. The resistance of the single crystals of (Ga0.6In0.4)2Se3 (R=500 MΩ) and (Ga0.594In0.396Er0.01)2Se3 (R=210 MΩ) was measured.

scholarly journals Adjustable Positive-Negative Signal in Self-Driven Photodetector based on Cubic CH3NH3PbI3 Large Single Crystal

2021 ◽  
Author(s):  
Xuewei Fu ◽  
Yunying Wang ◽  
Huawei Zhou ◽  
Yan Chen ◽  
Chen Wang ◽  
...  
Keyword(s):  
Response Time ◽  
Single Crystal ◽  
Band Gap ◽  
Single Crystals ◽  
Photocurrent Density ◽  
Large Single Crystal ◽  
Orientation Disorder ◽  
Octahedral Cavity ◽  
First Time ◽  
Negative Signal

<p><b>In this study, for the first time, self-driven photodetector based on cubic CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> large single crystal </b><b>(C-MAPbI<sub>3 </sub>LSC) </b><b>with adjustable positive-negative signal is fabricated. </b><b>The preparation of MAPbI<sub>3 </sub>large single crystal (MAPbI<sub>3 </sub>LSC) is realized by the method of growth-drop-growth (GDG). </b><b>The band gap of </b><b>MAPbI<sub>3 </sub></b><b>single crystals </b><b>with Pm-3m (221) space group (6.134×6.134×6.134 Å, 90.00 x 90.00 x 90.00) </b><b>is 1.58 eV.</b> <b>CH<sub>3</sub>NH<sub>3</sub><sup>+</sup> cation is orientation-disorder </b><b>within the perovskite cubo-octahedral cavity.</b><b> The photocurrent density at 803 nm of the</b><b> C-MAPbI<sub>3 </sub>LSC</b><b> photodetector under different bias voltages is the highest under different wavelength. The </b><b>responsivities (R), response time, external quantum efficiencies (EQE) and the detectivity (D) for </b><b>C-MAPbI<sub>3 </sub>LSC</b><b> photodetector at 803 nm wavelength with 1 W m<sup>-2</sup></b><b>, respectively, is </b><b>508.7 µA/mW, 0.1338 ms, 79.6% and 8.64*10<sup>11</sup> Jones. Notably, </b><b>the C-MAPbI<sub>3 </sub>LSC photodetector can be self-driven under 0 V bias voltage, in particular, the positive and negative values of the photocurrent can be adjusted. The proposed mechanism of poling inducing built-in potential is explained adjustable positive-negative signal in self-driven photodetector based on cubic CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> large single crystal.</b><b></b></p>

Effect of 2,4-dinitrophenol dye doping on tristhioureazinc(II) sulfate single crystals: a potential nonlinear optical material

2020 ◽  
Vol 53 (4) ◽  
pp. 972-981 ◽  
Author(s):  
G. Durgababu ◽  
G. J. Nagaraju ◽  
G. Bhagavannarayana
Keyword(s):  
Crystal Structure ◽  
Band Gap ◽  
Single Crystals ◽  
Nonlinear Optical ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Optical Range ◽  
Gap Energy ◽  
Uv Visible ◽  
Crystalline Matrix

Good quality single crystals of 2,4-dinitrophenol (DNP)-doped tristhioureazinc(II) sulfate (ZTS) were successfully grown by employing the simple and cost effective slow-evaporation solution technique. To study the effect of doping on various device properties, the grown single crystals were subjected to powder X-ray diffraction (PXRD), high-resolution XRD, thermogravimetric analysis (TGA), Vickers hardness testing, and UV–visible, photoluminescence (PL) and Fourier transform IR (FTIR) spectroscopy techniques. The crystal structure of DNP-doped ZTS bulk single crystals remained the same as the crystal structure of ZTS. However, the changes in intensities of the diffraction peaks in the PXRD spectra indicated the incorporation of dopants into the crystalline matrix. FTIR studies confirm the incorporation of dopants into the crystalline matrix, shown by the shifting of certain prominent absorption bands towards higher energy. This also indicated the induced useful strain due to doping, leading to charge transfer and the enhancement of nonlinear optical properties. The cut-off wavelength and optical band gap energy of pure ZTS and DNP-doped ZTS crystals were studied by UV–visible absorption spectroscopy, revealing a slight reduction in the optical band gap energy due to doping, which in turn revealed the enhancement of the optical range. PL studies revealed an enhanced optical range of photoluminescence in ZTS crystals. Second harmonic generation (SGH) studies carried out by the Kurtz powder technique revealed the enhancement of SHG value due to DNP doping. To ensure the thermal stability and mechanical strength of the grown crystals with doping (required from the point of view of device applications), TGA and Vicker's hardness studies were performed.

Photoluminescence Investigation of Defects and Optical Band Gap in Multiferroic BiFeO$_{3}$ Single Crystals

2012 ◽  
Vol 5 (3) ◽  
pp. 035802 ◽  
Author(s):  
Reda Moubah ◽  
Guy Schmerber ◽  
Olivier Rousseau ◽  
Dorothée Colson ◽  
Michel Viret
Keyword(s):  
Band Gap ◽  
Single Crystals ◽  
Optical Band Gap ◽  
Multiferroic Bifeo
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