Linking thermoelectric generation in polycrystalline semiconductors to grain boundary effects sets a platform for novel Seebeck effect-based sensors

2018 ◽  
Vol 6 (22) ◽  
pp. 10370-10378 ◽  
Author(s):  
Faramarz Hossein-Babaei ◽  
Saeed Masoumi ◽  
Amirreza Noori

Data available on the thermoelectric properties of polycrystalline semiconductors are inconsistent, riddled with gaps, and ascribe stronger Seebeck effects to polycrystalline samples rather than single crystals.

1995 ◽  
Vol 36 (4) ◽  
pp. 357-368 ◽  
Author(s):  
J. Dutta ◽  
D. Bhattacharyya ◽  
S. Chaudhuri ◽  
A.K. Pal

2006 ◽  
Vol 26 (14) ◽  
pp. 2855-2859 ◽  
Author(s):  
Jan Petzelt ◽  
Tetyana Ostapchuk ◽  
Ivan Gregora ◽  
Maxim Savinov ◽  
Dagmar Chvostova ◽  
...  

Ionics ◽  
2010 ◽  
Vol 17 (1) ◽  
pp. 69-74 ◽  
Author(s):  
Rajeev Joshi ◽  
Ratikant Mishra ◽  
C. A. Betty ◽  
Shilpa Sawant ◽  
S. H. Pawar

1990 ◽  
Vol 51 (C1) ◽  
pp. C1-1035-C1-1042 ◽  
Author(s):  
J. SABRAS ◽  
C. DOLIN ◽  
J. AYACHE ◽  
C. MONTY ◽  
R. MAURY ◽  
...  

2006 ◽  
Vol 978 ◽  
Author(s):  
Jibin Shi ◽  
Mohammed Zikry ◽  
Tarek Moustafa Hatem

AbstractDislocation-density based multiple-slip constitutive formulations and specialized computational schemes are introduced to account for grain-boundary (GB) effects in polycrystalline aggregates. New kinematically based interfacial grain-boundary regions and formulations are introduced to account for dislocation-density transmission, absorption, and pile-ups that may occur due to CSL grain-boundary misorientations.


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