Multimodal characterization of solution-processed Cu3SbS4 absorbers for thin film solar cells

2018 ◽  
Vol 6 (18) ◽  
pp. 8682-8692 ◽  
Author(s):  
Gustavo H. Albuquerque ◽  
Ki-Joong Kim ◽  
Jonathon I. Lopez ◽  
Arun Devaraj ◽  
Sandeep Manandhar ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Absorption Coefficient ◽  
Thin Film Solar Cells ◽  
Solution Processed ◽  
Sulfurization Process

Optimized sulfurization process and final spectrum of the absorption coefficient of the Cu3SbS4 thin films.

Solution-processed Cu2ZnSnS4 absorbers prepared by appropriate inclusion and removal of thiourea for thin film solar cells

RSC Advances ◽  
2014 ◽  
Vol 4 (18) ◽  
pp. 9118-9125 ◽  
Author(s):  
Si-Nae Park ◽  
Shi-Joon Sung ◽  
Dae-Ho Son ◽  
Dae-Hwan Kim ◽  
Mungunshagai Gansukh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Organic Chemicals ◽  
Photovoltaic Properties ◽  
Solution Processed ◽  
Czts Thin Films

Effective adding/removal of organic chemicals to/from CZTS precursor thin films for preparing uniform CZTS thin films with optimal photovoltaic properties was achieved by pre-annealing of CZTS precursors containing thiourea.

Synthesis and Characterization of the Thin Films NiSe2/Si Heterojunction for Solar Cells

2021 ◽  
Vol 886 ◽  
pp. 57-65
Author(s):  
Shaymaa Qasim Abdul Hasan ◽  
Ahmed Z. Obaid ◽  
Hanan K. Hassun ◽  
Auday H. Shaban
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Annealing Temperatures ◽  
Material Usage ◽  
Evaporation Technique ◽  
Chalcogenide Materials ◽  
Vacuum Evaporation Technique

Thin film solar cells are preferable to the researchers and in applications due to the minimum material usage and to the rising of their efficiencies. In particular, thin film solar cells, which are designed based one transition metal chalcogenide materials, paly an essential role in solar energy conversion market. In this paper, transition metals with chalcogenide Nickel selenide termed as (NiSe2/Si) are synthesized. To this end, polycrystalline NiSe2 thin films are deposited through the use of vacuum evaporation technique under vacuum of 2.1x10-5 mbar, which are supplied to different annealing temperatures. The results show that under an annealed temperature of 525 K, the nickel sulfoselenide thin films are polycrystalline with an efficient regularity and best crystalline quality. In addition, the results demonstrate that the intersection argument for the optical properties under investigation provid the direct bandgap, over which the films have inferred on variety (1.55 and 1.75 eV). Overall, the results illustrate that an efficiency of 2.89% can be achieved with 525 K temperature.

Effect of sulfurization process on the properties of solution-processed Cu2SnS3 thin film solar cells

2019 ◽  
Vol 30 (19) ◽  
pp. 17947-17955 ◽  
Author(s):  
Yun Zhao ◽  
Xiuxun Han ◽  
Bin Xu ◽  
Chen Dong ◽  
Junshuai Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Solution Processed ◽  
Sulfurization Process

scholarly journals Impurity Phases and Optoelectronic Properties of CuSbSe2 Thin Films Prepared by Cosputtering Process for Absorber Layer in Solar Cells

Coatings ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1209 ◽  
Author(s):  
Sara Kim ◽  
Nam-Hoon Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Absorption Coefficient ◽  
Low Cost ◽  
Thin Film Solar Cells ◽  
Volatile Components ◽  
Impurity Phases ◽  
Sputtering Power ◽  
Earth Abundant

When there is a choice of materials for an application, particular emphasis should be given to the development of those that are low-cost, nontoxic, and Earth-abundant. Chalcostibite CuSbSe2 has gained attention as a potential absorber material for thin-film solar cells, since it exhibits a high absorption coefficient. In this study, CuSbSe2 thin films were deposited by radio frequency magnetron cosputtering with CuSe2 and Sb targets. A series of CuSbxSe2 thin films were prepared with different Sb contents adjusted by sputtering power, followed by rapid thermal annealing. Impurity phases and surface morphology of Cu–Sb–Se systems were directly affected by the Sb sputtering power, with the formation of volatile components. The crystallinity of the CuSbSe2 thin films was also enhanced in the near-stoichiometric system at an Sb sputtering power of 15 W, and considerable degradation in crystallinity occurred with a slight increase over 19 W. Resistivity, carrier mobility, and carrier concentration of the near-stoichiometric thin film were 14.4 Ω-cm, 3.27 cm2/V∙s, and 1.33 × 1017 cm−3, respectively. The optical band gap and absorption coefficient under the same conditions were 1.7 eV and 1.75 × 105 cm−1, which are acceptable for highly efficient thin-film solar cells.

Characterization of CdTe thin films with different compositions obtained by CMBD for thin film solar cells

Solar Energy ◽  
2017 ◽  
Vol 144 ◽  
pp. 411-416 ◽  
Author(s):  
T.M. Razykov ◽  
K.M. Kuchkarov ◽  
C.S. Ferekides ◽  
B.A. Ergashev ◽  
R.T. Yuldoshov ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Cdte Thin Films
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