Shear-induced parallel and transverse alignments of cylinders in thin films of diblock copolymers

Soft Matter ◽  
2018 ◽  
Vol 14 (32) ◽  
pp. 6635-6647 ◽  
Author(s):  
Yulong Chen ◽  
Qian Xu ◽  
Yangfu Jin ◽  
Xin Qian ◽  
Rui Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Diblock Copolymers ◽  
Underlying Mechanisms

Shear-induced parallel and transverse alignments of cylinders in thin films of diblock copolymers and their underlying mechanisms were studied by simulations.

Nanoporous Thin Films Formed from Photocleavable Diblock Copolymers on Gold Substrates Modified with Thiolate Self-Assembled Monolayers

Langmuir ◽  
2020 ◽  
Vol 36 (31) ◽  
pp. 9259-9268 ◽  
Author(s):  
Takashi Ito ◽  
Herman Coceancigh ◽  
Yi Yi ◽  
Jay N. Sharma ◽  
Fred C. Parks ◽  
...  
Keyword(s):  
Thin Films ◽  
Diblock Copolymers ◽  
Self Assembled Monolayers ◽  
Gold Substrates ◽  
Assembled Monolayers ◽  
Self Assembled

Array of Fe3O4 Nanoparticles in PS-b-P2VP thin Films

2013 ◽  
Vol 345 ◽  
pp. 193-196
Author(s):  
Xin Kang Gao ◽  
Jun Liu ◽  
Ting Hua Wang ◽  
Xue Li ◽  
Xiao Kai Zhang
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Composite Film ◽  
Self Assembly ◽  
Spin Coating ◽  
Diblock Copolymers ◽  
Carbon Substrate ◽  
Mixed Solution ◽  
Long Time ◽  
Oriented Parallel

In this study, a method to generate arrays of Fe3O4 nanoparticles (MNPs) via block copolymer (BC) self-assembly was developed. A composite film of polystyrene-block-poly (2-vinylpyridine) (PS-b-P2VP)/MNPs was first prepared by spin-coating the PS-b-P2VP/MNPs mixed solution on a carbon substrate. After the composite film was annealed at high temperature for 2 days, it was found that the modified MNPs could be selectively incorporated into P2VP cylinders in PS-b-P2VP diblock copolymers and the P2VP cylinders were oriented parallel to the substrate. For a long time annealing (10 days), the P2VP cylinders become normal to the substrate and MNPs are located at the interface of P2VP and PS phases.

Nanostructured organic radical cathodes from self-assembled nitroxide-containing block copolymer thin films

2015 ◽  
Vol 3 (38) ◽  
pp. 19575-19581 ◽  
Author(s):  
G. Hauffman ◽  
A. Vlad ◽  
T. Janoschka ◽  
U. S. Schubert ◽  
J.-F. Gohy
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Block Copolymer ◽  
Diblock Copolymers ◽  
Organic Radical ◽  
Nanostructured Thin Film ◽  
Self Assembled

Nanostructured thin film organic radical cathodes have been prepared from poly(styrene)-block-poly(2,2,6,6-tetramethylpiperidinyloxy-4-yl methacrylate) diblock copolymers.

Nanostructure- and Orientation-Controlled Digital Memory Behaviors of Linear-Brush Diblock Copolymers in Nanoscale Thin Films

2014 ◽  
Vol 47 (13) ◽  
pp. 4397-4407 ◽  
Author(s):  
Kyungtae Kim ◽  
Young Yong Kim ◽  
Samdae Park ◽  
Yong-Gi Ko ◽  
Yecheol Rho ◽  
...  
Keyword(s):  
Thin Films ◽  
Diblock Copolymers ◽  
Digital Memory

Functionalized Nanoporous Thin Films from Metallo-Supramolecular Diblock Copolymers

Langmuir ◽  
2012 ◽  
Vol 28 (5) ◽  
pp. 3018-3023 ◽  
Author(s):  
Clément Mugemana ◽  
Jean-François Gohy ◽  
Charles-André Fustin
Keyword(s):  
Thin Films ◽  
Diblock Copolymers

Surface Characteristics, Etching Behaviors and Chemicalmechanical Polishing of Aluminum Alloy thin Films

1997 ◽  
Vol 477 ◽  
Author(s):  
Wei-Tsu Tseng ◽  
Jun Wu ◽  
Yee-Shyi Chang
Keyword(s):  
Thin Films ◽  
Alloy Composition ◽  
Surface Characteristics ◽  
Corrosion Current ◽  
Native Oxide ◽  
Al Alloy ◽  
Abrasive Particles ◽  
Mechanical Abrasion ◽  
Underlying Mechanisms ◽  
Auxiliary Role

ABSTRACTEtching behaviors of various Al alloy thin films in H2O2-based acidic etchants are investigated in this study. The pH and H2O2 content in the etchant are varied in order to simulate the case where Al thin films are subject to chemical-mechanical polishing (CMP) using slurries of different compositions. Corrosion current and thickness of the native oxide on pure-Al, AI-1%Si, Al-0.5%Cu, AI-1%Si-0.5%Cu, and AI-1%Cu thin films are determined from Tafel and ESCA analyses respectively. Comparisons between etch rate and CMP polish rate data suggest that Al-CMP removal process depends strongly on the chemical reactions by the oxidizer (slurry). Mechanical abrasion by the abrasive particles plays only an auxiliary role during Al CMP. In addition, alloy composition (% Si and % Cu) influence both etching and polishing behaviors to a great extent. The underlying mechanisms for etching and polishing are discussed.

Nanoscale localization of poly(vinylidene fluoride) in the lamellae of thin films of symmetric polystyrene–poly(methyl methacrylate) diblock copolymers

Polymer ◽  
2005 ◽  
Vol 46 (11) ◽  
pp. 3776-3781 ◽  
Author(s):  
Seong Il Yoo ◽  
Sang-Hyun Yun ◽  
Jeong Min Choi ◽  
Byeong-Hyeok Sohn ◽  
Wang-Cheol Zin ◽  
...  
Keyword(s):  
Thin Films ◽  
Methyl Methacrylate ◽  
Diblock Copolymers ◽  
Vinylidene Fluoride ◽  
Poly Methyl Methacrylate ◽  
Poly Vinylidene Fluoride

The Intercorrelation Between Microstructure and Chemicalmechanical Polish of Metal Thin Films

1999 ◽  
Vol 564 ◽  
Author(s):  
Wei-Tsu Tseng ◽  
Ying-Lang Wang
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Removal Rate ◽  
Metal Films ◽  
The Other ◽  
Metal Thin Films ◽  
Other Hand ◽  
Underlying Mechanisms ◽  
Table Speed

AbstractThe correlation between microstructures of Al and W metal thin films and their respective CMP performance is investigated. It is found that CMP removal rate decreases with increasing grain size. In both cases, the textures of the metal films are altered and their resistivity increased after CMP. The phenomenon is more pronounced for polish under a greater down force. The table speed, on the other hand, has only minimum effects on microstructure and resistivity. The possible underlying mechanisms leading to this phenomenon are proposed and their potential impacts on metallization reliability is discussed.

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