scholarly journals Vinylene and benzo[c][1,2,5]thiadiazole: effect of the π-spacer unit on the properties of bis(2-oxoindolin-3-ylidene)-benzodifuran-dione containing polymers for n-channel organic field-effect transistors

RSC Advances ◽  
2018 ◽  
Vol 8 (68) ◽  
pp. 38919-38928
Author(s):  
Thu Trang Do ◽  
Basanagouda B. Patil ◽  
Samarendra P. Singh ◽  
Soniya D. Yambem ◽  
Krishna Feron ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Device Structure ◽  
Polymer Semiconductors ◽  
Top Contact ◽  
Bottom Gate

Bottom-gate-top-contact OFET device structure using PBIBDF-TVT and PBIBDF-TBT based polymer semiconductors.

High Performance Organic Field-Effect Transistors and Integrated Inverters

2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Metal Contacts ◽  
Gate Electrodes ◽  
Polymer Semiconductors ◽  
Set Up

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.

High-resolution organic field-effect transistors manufactured by electrohydrodynamic inkjet printing of doped electrodes

2020 ◽  
Vol 8 (43) ◽  
pp. 15219-15223
Author(s):  
Jing Zhang ◽  
Bowen Geng ◽  
Shuming Duan ◽  
Congcong Huang ◽  
Yue Xi ◽  
...  
Keyword(s):  
High Resolution ◽  
Inkjet Printing ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Top Contact

A top-contact, sub-5 μm resolution OFET is realized using inkjet printed electrodes with different F4-TCNQ doping concentrations.

scholarly journals Controlling charge injection by self-assembled monolayers in bottom-gate and top-gate organic field-effect transistors

2011 ◽  
Vol 161 (21-22) ◽  
pp. 2226-2229 ◽  
Author(s):  
Fatemeh Gholamrezaie ◽  
Kamal Asadi ◽  
Romero A.H.J. Kicken ◽  
Bea M.W. Langeveld-Voss ◽  
Dago M. de Leeuw ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Self Assembled Monolayers ◽  
Organic Field Effect Transistors ◽  
Assembled Monolayers ◽  
Self Assembled ◽  
Bottom Gate

A novel method for photolithographic polymer shadow masking: toward high-resolution high-performance top-contact organic field effect transistors

2014 ◽  
Vol 50 (61) ◽  
pp. 8328-8330 ◽  
Author(s):  
Deyang Ji ◽  
Longfeng Jiang ◽  
Lang Jiang ◽  
Xiaolong Fu ◽  
Huanli Dong ◽  
...  
Keyword(s):  
High Resolution ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Novel Method ◽  
Top Contact

The present work shows a novel method to prepare polymer-based masks called photolithographic polymer shadow masking and its application in the process of fabricating top-contact high-resolution OFETs.

scholarly journals High-Performance Flexible Bottom-Gate Organic Field-Effect Transistors with Gravure Printed Thin Organic Dielectric

2014 ◽  
Vol 1 (3) ◽  
pp. 1300123 ◽  
Author(s):  
Nikolay L. Vaklev ◽  
Robert Müller ◽  
Beinn V. O. Muir ◽  
David T. James ◽  
Roger Pretot ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Dielectric ◽  
Bottom Gate

Doping Polymer Semiconductors by Organic Salts: Toward High-Performance Solution-Processed Organic Field-Effect Transistors

ACS Nano ◽  
2018 ◽  
Vol 12 (4) ◽  
pp. 3938-3946 ◽  
Author(s):  
Yuanyuan Hu ◽  
Zachary D. Rengert ◽  
Caitlin McDowell ◽  
Michael J. Ford ◽  
Ming Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Salts ◽  
Solution Processed ◽  
Polymer Semiconductors

Simultaneous enhancement of charge density and molecular stacking order of polymer semiconductors by viologen dopants for high performance organic field-effect transistors

2018 ◽  
Vol 6 (20) ◽  
pp. 5497-5505 ◽  
Author(s):  
Dong-Hyeon Lee ◽  
Minji Kang ◽  
Dae-Hee Lim ◽  
Yunseul Kim ◽  
Jiyoul Lee ◽  
...  
Keyword(s):  
Charge Density ◽  
Conjugated Polymer ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Polymer Semiconductors ◽  
Stacking Order ◽  
Molecular Stacking

Simultaneous enhancement of both charge density and favourable molecular stacking order by the incorporation of a molecular dopant in π-conjugated polymer.

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