scholarly journals Thermal conductivity of poly(3,4-ethylenedioxythiophene) films engineered by oxidative chemical vapor deposition (oCVD)

RSC Advances ◽  
2018 ◽  
Vol 8 (35) ◽  
pp. 19348-19352 ◽  
Author(s):  
Phil M. Smith ◽  
Laisuo Su ◽  
Wei Gong ◽  
Nathan Nakamura ◽  
B. Reeja-Jayan ◽  
...  

Measuring the thermal conductivity of oxidative chemical vapor deposited poly(3,4-ethylenedioxythiophene) thin films.

MRS Bulletin ◽  
2001 ◽  
Vol 26 (6) ◽  
pp. 458-463 ◽  
Author(s):  
Jitendra S. Goela ◽  
Nathaniel E. Brese ◽  
Michael A. Pickering ◽  
John E. Graebner

Chemical vapor deposition (CVD) is an attractive method for producing bulk and thin-film materials for a variety of applications. In this method, gaseous reagents condense onto a substrate and then react to produce solid materials. The materials produced by CVD are theoretically dense, highly pure, and have other superior properties.


2021 ◽  
Author(s):  
Xiaowei Lu ◽  
Sien Wang ◽  
Ankit Negi ◽  
Hezhu Shao ◽  
Peng Jiang ◽  
...  

2019 ◽  
Vol 685 ◽  
pp. 180-185 ◽  
Author(s):  
Shrikant Saini ◽  
Paolo Mele ◽  
Takafumi Oyake ◽  
Junichiro Shiomi ◽  
Janne-Petteri Niemelä ◽  
...  

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.


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