scholarly journals Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions

Nanoscale ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 4719-4725 ◽  
Author(s):  
Botond Sánta ◽  
Zoltán Balogh ◽  
Agnes Gubicza ◽  
László Pósa ◽  
Dávid Krisztián ◽  
...  
Keyword(s):  
Internal Resistance ◽  
Current Noise ◽  
Resistive Switches ◽  
Resistance Fluctuations

We demonstrate the universal 1/f type current noise in Ag based, nanofilamentary resistive switches which arises from internal resistance fluctuations.

Low Frequency Noise and TCR Mechanisms in Polymer Thick Film Resistors

2010 ◽  
Vol 7 (2) ◽  
pp. 105-110
Author(s):  
B. Poornaiah ◽  
G. Srinivasa Rao ◽  
A.V. Prathap Kumar ◽  
Y. Srinivasa Rao
Keyword(s):  
Thick Film ◽  
Volume Fraction ◽  
Low Frequency ◽  
High Volume ◽  
Current Noise ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Film Resistor ◽  
Thick Film Resistor ◽  
Resistance Fluctuations

The paper aims to propose a more realistic low frequency noise and TCR mechanisms in polymer thick film resistors. The variation of low frequency noise (also called current noise) and TCR of polymer thick film resistor, namely, PVC-graphite thick film resistor, with parameters such as high volume fraction and grain size has been studied. A model is proposed to explain the observed variations, which assumes that the texture of the polymer thick film resistor consists of densely packed conducting particles with a cavity at the center of the structure. Further, the effect of the cavity diameter of polymer thick film resistor on current noise and TCR is explained using the same model. The current noise of these resistors is controlled mainly by the average relative resistance fluctuations between the conducting particles and the number of contacts each particle has with its neighbors. The TCR of these resistors is controlled mainly by the expansion properties of the insulating medium. The variation of TCR with high voltage is also due to the change in number of contacts and the contact area between the conducting particles.

Noise properties of thin-film Ni-P resistors embedded in printed circuit boards

2013 ◽  
Vol 61 (3) ◽  
pp. 731-735
Author(s):  
A.W. Stadler ◽  
Z. Zawiślak ◽  
W. Stęplewski ◽  
A. Dziedzic
Keyword(s):  
Thin Film ◽  
Printed Circuit Boards ◽  
Circuit Boards ◽  
Noise Component ◽  
Printed Circuit ◽  
Resistance Bridge ◽  
Different Types ◽  
Signal Path ◽  
Resistance Fluctuations ◽  
Made In

Abstract. Noise studies of planar thin-film Ni-P resistors made in/on Printed Circuit Boards, both covered with two different types of cladding or uncladded have been described. The resistors have been made of the resistive-conductive-material (Ohmega-Ply©) of 100 Ώ/sq. Noise of the selected pairs of samples has been measured in the DC resistance bridge with a transformer as the first stage in a signal path. 1/f noise caused by resistance fluctuations has been found to be the main noise component. Parameters describing noise properties of the resistors have been calculated and then compared with the parameters of other previously studied thin- and thick-film resistive materials.

scholarly journals Current Noise in Thick and Thin Film Resistors

1983 ◽  
Vol 10 (2-3) ◽  
pp. 81-85 ◽  
Author(s):  
S. Demolder ◽  
A. Van Calster ◽  
M. Vandendriessche
Keyword(s):  
Thin Film ◽  
Thick Film ◽  
Measured Data ◽  
Measuring Circuit ◽  
Current Noise ◽  
High Quality ◽  
Thin Film Resistors

In this paper a sensitive measuring circuit is described for the measurement of current noise on high quality thin and thick film resistors. Measured data on resistors are presented and analysed.

scholarly journals Towards explicit regulating-ion-transport: nanochannels with only function-elements at outer-surface

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Qun Ma ◽  
Yu Li ◽  
Rongsheng Wang ◽  
Hongquan Xu ◽  
Qiujiao Du ◽  
...  
Keyword(s):  
Ion Transport ◽  
Numerical Simulations ◽  
Power Density ◽  
Outer Surface ◽  
Internal Resistance ◽  
Porous Membranes ◽  
Two Dimensional ◽  
Ionic Selectivity ◽  
Key Features ◽  
Energy Conversion Devices

AbstractFunction elements (FE) are vital components of nanochannel-systems for artificially regulating ion transport. Conventionally, the FE at inner wall (FEIW) of nanochannel−systems are of concern owing to their recognized effect on the compression of ionic passageways. However, their properties are inexplicit or generally presumed from the properties of the FE at outer surface (FEOS), which will bring potential errors. Here, we show that the FEOS independently regulate ion transport in a nanochannel−system without FEIW. The numerical simulations, assigned the measured parameters of FEOS to the Poisson and Nernst-Planck (PNP) equations, are well fitted with the experiments, indicating the generally explicit regulating-ion-transport accomplished by FEOS without FEIW. Meanwhile, the FEOS fulfill the key features of the pervious nanochannel systems on regulating-ion-transport in osmotic energy conversion devices and biosensors, and show advantages to (1) promote power density through concentrating FE at outer surface, bringing increase of ionic selectivity but no obvious change in internal resistance; (2) accommodate probes or targets with size beyond the diameter of nanochannels. Nanochannel-systems with only FEOS of explicit properties provide a quantitative platform for studying substrate transport phenomena through nanoconfined space, including nanopores, nanochannels, nanopipettes, porous membranes and two-dimensional channels.

scholarly journals Tunable High Speed Atomic Rotor in Bi2Se3 Revealed by Current Noise

ACS Nano ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 1421-1425
Author(s):  
Léonard Desvignes ◽  
Vasily S. Stolyarov ◽  
Marco Aprili ◽  
Freek Massee
Keyword(s):  
High Speed ◽  
Current Noise

scholarly journals Internal resistance measurements of Li-ion batteries using AC methods

2021 ◽  
Vol 1719 (1) ◽  
pp. 012045
Author(s):  
S Kuntinugunetanon ◽  
W Meesiri ◽  
W Wongkokua
Keyword(s):  
Internal Resistance ◽  
Li Ion Batteries ◽  
Li Ion
Sign in / Sign up

Export Citation Format

Share Document