Novel tunneled phosphorus-doped WO3 films achieved using ignited red phosphorus for stable and fast switching electrochromic performances

Nanoscale ◽  
2019 ◽  
Vol 11 (7) ◽  
pp. 3318-3325 ◽  
Author(s):  
Koo Bon-Ryul ◽  
Kue-Ho Kim ◽  
Hyo-Jin Ahn
Keyword(s):  
Red Phosphorus ◽  
Fast Switching ◽  
Electrochromic Material ◽  
Phosphorus Doped

Novel tunneled phosphorus (P)-doped WO3 films developed using ignited red P are a valuable electrochromic material with stable fast-switching performances.

A new dissociation mode for dislocations in silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 346-347
Author(s):  
A. Ourmazd ◽  
G.R. Booker ◽  
C.J. Humphreys
Keyword(s):  
Detailed Examination ◽  
Experimental Results ◽  
Dislocation Network ◽  
Weak Beam ◽  
Phosphorus Doped

A (111) phosphorus-doped Si specimen, thinned to give a TEM foil of thickness ∼ 150nm, contained a dislocation network lying on the (111) plane. The dislocation lines were along the three <211> directions and their total Burgers vectors,ḇt, were of the type , each dislocation being of edge character. TEM examination under proper weak-beam conditions seemed initially to show the standard contrast behaviour for such dislocations, indicating some dislocation segments were undissociated (contrast A), while other segments were dissociated to give two Shockley partials separated by approximately 6nm (contrast B) . A more detailed examination, however, revealed that some segments exhibited a third and anomalous contrast behaviour (contrast C), interpreted here as being due to a new dissociation not previously reported. Experimental results obtained for a dislocation along [211] with for the six <220> type reflections using (g,5g) weak-beam conditions are summarised in the table below, together with the relevant values.

Iron Loss Characteristics of Motors Fed by Fast Switching GaN-FET Inverters

2020 ◽  
Vol 140 (6) ◽  
pp. 488-494
Author(s):  
Haruo Naitoh ◽  
Takaya Sugimoto ◽  
Keisuke Fujisaki
Keyword(s):  
Iron Loss ◽  
Fast Switching ◽  
Gan Fet

Methodology for Analysis of Schottky Diode Failures

2010 ◽  
Author(s):  
Bhanu P. Sood ◽  
Michael Pecht ◽  
John Miker ◽  
Tom Wanek
Keyword(s):  
Failure Mode ◽  
Schottky Diode ◽  
Failure Modes ◽  
Schottky Diodes ◽  
Failure Mechanisms ◽  
Forward Voltage ◽  
Fast Switching ◽  
Voltage Drops ◽  
The Common

Abstract Schottky diodes are semiconductor switching devices with low forward voltage drops and very fast switching speeds. This paper provides an overview of the common failure modes in Schottky diodes and corresponding failure mechanisms associated with each failure mode. Results of material level evaluation on diodes and packages as well as manufacturing and assembly processes are analyzed to identify a set of possible failure sites with associated failure modes, mechanisms, and causes. A case study is then presented to illustrate the application of a systematic FMMEA methodology to the analysis of a specific failure in a Schottky diode package.

High-Density Memristor-CMOS Ternary Logic Family

2020 ◽  
Author(s):  
Xiaoyuan Wang ◽  
Pengfei Zhou ◽  
Jason Eshraghian ◽  
Chih-Yang Lin ◽  
Herbert Ho-Ching Iu ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Practical Implementation ◽  
Switching Speed ◽  
High Data ◽  
Fast Switching ◽  
Data Density ◽  
Order Of Magnitude ◽  
High Transconductance ◽  
Logic Functions ◽  
Magnitude Improvement

<div>This paper presents the first experimental demonstration</div><div>of a ternary memristor-CMOS logic family. We systematically</div><div>design, simulate and experimentally verify the primitive</div><div>logic functions: the ternary AND, OR and NOT gates. These are then used to build combinational ternary NAND, NOR, XOR and XNOR gates, as well as data handling ternary MAX and MIN gates. Our simulations are performed using a 50-nm process which are verified with in-house fabricated indium-tin-oxide memristors, optimized for fast switching, high transconductance, and low current leakage. We obtain close to an order of magnitude improvement in data density over conventional CMOS logic, and a reduction of switching speed by a factor of 13 over prior state-of-the-art ternary memristor results. We anticipate extensions of this work can realize practical implementation where high data density is of critical importance.</div>

Review on Switches for Power Applications: Macro to Micro

2019 ◽  
Vol 12 (3) ◽  
pp. 200-209
Author(s):  
Femi Robert
Keyword(s):  
Leakage Current ◽  
Power Loss ◽  
Low Cost ◽  
Electrical System ◽  
High Isolation ◽  
Fast Switching ◽  
Environmental Friendly ◽  
State Resistance ◽  
Very High ◽  
Bulk Production

Background: Switches are important component in electrical system. The switches needs to have the advantages of low ON-state resistance, very high OFF-state resistance, high isolation, no leakage current, less power loss, fast switching, high linearity, small size, arcless and low cost in bulk production. Also these switches have to be reliable and environmental friendly. Methods: In this paper, macro and microswitches for power applications are extensively reviewed and summarized. Various types of switches such as mechanical, solid-state, hybrid and micromechanical switches have been used for power applications are reviewed. The importance and challenge in achieving arcless switching is presented. Results: The use of micromechanical switches for power applications, actuation techniques, switching modes, reliability and lifetime are also reviewed. The modeling and design challenges are also reviewed. Conclusion: The applications of micromechanical switches shows that the switches can reduce the leakage current in battery operated systems and reduce the size of the system considerably.

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