scholarly journals Charge-governed phase manipulation of few-layer tellurium

Nanoscale ◽  
2018 ◽  
Vol 10 (47) ◽  
pp. 22263-22269 ◽  
Author(s):  
Cong Wang ◽  
Xieyu Zhou ◽  
Jingsi Qiao ◽  
Linwei Zhou ◽  
Xianghua Kong ◽  
...  
Keyword(s):  
Metallic Phase ◽  
Electron Doping ◽  
Charge Doping ◽  
Phase Manipulation

Te few-layer allotropes could be selectively stabilized and be reversibly transformed using charge doping. Among them, a novel chiral metallic phase emerges in a Te trilayer under electron doping.

Dynamic studies of silicide-mediated crystallization of amorphous silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1352-1353
Author(s):  
C. Hayzelden ◽  
J. L. Batstone
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Metallic Phase ◽  
Single Crystal Substrate ◽  
Free Electrons ◽  
Melt Temperature ◽  
Transmission Electron ◽  
Crystal Substrate ◽  
High Resolution Tem

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.

Metallic phase stabilization and phase diagram of (ET)3(HSO4)2

1991 ◽  
Vol 1 (10) ◽  
pp. 1365-1370 ◽  
Author(s):  
N. D. Kush ◽  
V. N. Laukhin ◽  
A. I. Schegolev ◽  
E. B. Yagubskii ◽  
E. Yu. Alikberova ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Metallic Phase ◽  
Phase Stabilization

DEGREE OF VALENCE MIXING IN THE METALLIC PHASE OF SmS AND IN TmSe

1976 ◽  
Vol 37 (C4) ◽  
pp. C4-267-C4-270 ◽  
Author(s):  
B. BATLOGG ◽  
A. SCHLEGEL ◽  
P. WACHTER
Keyword(s):  
Metallic Phase ◽  
Valence Mixing

Spatial Control of Charge Doping in n-Type Topological Insulators

Nano Letters ◽  
2021 ◽  
Author(s):  
Kazuyuki Sakamoto ◽  
Hirotaka Ishikawa ◽  
Takashi Wake ◽  
Chie Ishimoto ◽  
Jun Fujii ◽  
...  
Keyword(s):  
Topological Insulators ◽  
Spatial Control ◽  
Charge Doping

Electron n-doping of a highly electron-deficient chlorinated benzodifurandione-based oligophenylene vinylene polymer using benzyl viologen radical cations

2021 ◽  
Author(s):  
Teck Lip Dexter Tam ◽  
Albertus Denny Handoko ◽  
Ting Ting Lin ◽  
Jianwei Xu
Keyword(s):  
Radical Cation ◽  
Radical Cations ◽  
Benzyl Viologen ◽  
Electron Doping ◽  
N Doping ◽  
Polyphenylene Vinylene

Successful electron-doping of highly electron-deficient chlorinated benzodifurandione-based polyphenylene vinylene using viologen radical cation.

Interface coupling and charge doping in graphene on ferroelectric BiAlO3(0001) polar surfaces

2021 ◽  
Vol 23 (5) ◽  
pp. 3407-3416
Author(s):  
Jin Yuan ◽  
Jian-Qing Dai ◽  
Cheng Ke ◽  
Zi-Cheng Wei
Keyword(s):  
Dft Calculations ◽  
Hybrid System ◽  
First Principles ◽  
Doping Effect ◽  
Coupling Mechanism ◽  
Polarization Reversal ◽  
Interface Coupling ◽  
Polar Surfaces ◽  
Charge Doping

The interface coupling mechanism, charge doping effect, and effect of polarization reversal in the graphene/BiAlO3(0001) hybrid system are explored by first-principles DFT calculations.

Sign in / Sign up

Export Citation Format

Share Document