Intaglio-type random silver networks as the cathodes for efficient full-solution processed flexible quantum-dot light-emitting diodes

Nanoscale ◽  
2018 ◽  
Vol 10 (47) ◽  
pp. 22541-22548 ◽  
Author(s):  
Rongmei Yu ◽  
Ting Wang ◽  
Zhihui Kang ◽  
Han Zhang ◽  
Hanzhuang Zhang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Peak Power ◽  
Light Emitting Diodes ◽  
Solution Processed ◽  
Light Emitting ◽  
Full Solution

Efficient flexible QLEDs based on PRAN electrodes are obtained with the peak power efficiencies of 42.3, 101.9, and 6.4 lm W−1 for the red, green and blue devices, respectively.

Hexamethyldisilazane-mediated, full-solution-processed inverted quantum dot-light-emitting diodes

2017 ◽  
Vol 5 (3) ◽  
pp. 522-526 ◽  
Author(s):  
Yan Fu ◽  
Daekyoung Kim ◽  
Hyoungseok Moon ◽  
Heesun Yang ◽  
Heeyeop Chae
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Solution Processed ◽  
Solution Deposition ◽  
Light Emitting ◽  
Full Solution

Fabrication of a multilayered quantum dot-light-emitting diode (QLED) with an inverted architecture cannot be usually fully solution-processed mainly due to the significant destruction of the pre-existing quantum dot (QD) emitting layer (EML) occurring during the subsequent solution-deposition of the hole transport layer (HTL).

MoO3-induced oxidation doping of PEDOT:PSS for high performance full-solution-processed inverted quantum-dot light emitting diodes

2017 ◽  
Vol 5 (40) ◽  
pp. 10555-10561 ◽  
Author(s):  
Min-Hsuan Lee ◽  
Lixiang Chen ◽  
Ning Li ◽  
Furong Zhu
Keyword(s):  
Quantum Dot ◽  
Work Function ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Luminous Efficiency ◽  
Solution Processed ◽  
Light Emitting ◽  
Full Solution ◽  
Process Compatibility

MoO3-induced oxidation in PEDOT:PSS hole contact enables improving its conductivity, work function and process compatibility for application in solution-processed transparent QD-LEDs, attaining a maximum luminous efficiency of 1.39 cd A−1and a transparency of >70%.

High performance, top-emitting, quantum dot light-emitting diodes with all solution-processed functional layers

2017 ◽  
Vol 5 (35) ◽  
pp. 9138-9145 ◽  
Author(s):  
Zhaobing Tang ◽  
Jie Lin ◽  
Lishuang Wang ◽  
Ying Lv ◽  
Yongsheng Hu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Solution Process ◽  
Solution Processed ◽  
Light Emitting

High performance top-emitting green quantum dot light-emitting diodes have been developed based on an all-solution process and with a bottom Al anode.

Improved Brightness and Color Tunability of Solution-Processed Silicon Quantum Dot Light-Emitting Diodes

2020 ◽  
Vol 124 (42) ◽  
pp. 23333-23342
Author(s):  
Hiroyuki Yamada ◽  
Noriyuki Saitoh ◽  
Batu Ghosh ◽  
Yoshitake Masuda ◽  
Noriko Yoshizawa ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Solution Processed ◽  
Light Emitting ◽  
Silicon Quantum Dot ◽  
Color Tunability

scholarly journals Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27464-27472 ◽  
Author(s):  
Jingling Li ◽  
Qiling Guo ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehua Xu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Temperature Solution

In this work, quantum dot light-emitting diodes (QD-LEDs) based on a low-temperature solution-processed MoOx hole injection layer were fabricated.

scholarly journals Solution-processed double-layered hole transport layers for highly-efficient cadmium-free quantum-dot light-emitting diodes

2020 ◽  
Vol 28 (5) ◽  
pp. 6134 ◽  
Author(s):  
Fei Chen ◽  
Li-Jin Wang ◽  
Xu Li ◽  
Zhen-Bo Deng ◽  
Feng Teng ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Solution Processed ◽  
Light Emitting ◽  
Highly Efficient ◽  
Hole Transport Layers
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