Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In2Se3 thin layers
A switchable diode based on room-temperature two-dimensional ferroelectric α-In2Se3 thin layers.
1972 ◽
Vol 37
(9)
◽
pp. 3034-3038
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2016 ◽
Vol 72
(6)
◽
pp. 480-484
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