Layer-by-layer manipulation of anisotropic nanoblocks: orientation-switched superlattices through orthogonal stacking of a and c directions

Nanoscale ◽  
2018 ◽  
Vol 10 (27) ◽  
pp. 12957-12962 ◽  
Author(s):  
Yoshitaka Nakagawa ◽  
Riho Matsumoto ◽  
Hiroyuki Kageyama ◽  
Yuya Oaki ◽  
Hiroaki Imai
Keyword(s):  
Layer By Layer ◽  
2D Arrays

Elaborate multilayered architectures are achieved through the orthogonal stacking of two types of 2D arrays of nanoblocks through layer-by-layer manipulation.

Flexible and Robust 2D Arrays of Silver Nanowires Encapsulated within Freestanding Layer-by-Layer Films

2006 ◽  
Vol 16 (15) ◽  
pp. 2024-2034 ◽  
Author(s):  
R. Gunawidjaja ◽  
C. Jiang ◽  
S. Peleshanko ◽  
M. Ornatska ◽  
S. Singamaneni ◽  
...  
Keyword(s):  
Silver Nanowires ◽  
Layer By Layer ◽  
2D Arrays

Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

1991 ◽  
Vol 49 ◽  
pp. 762-763
Author(s):  
M.A. Parker ◽  
K.E. Johnson ◽  
C. Hwang ◽  
A. Bermea
Keyword(s):  
Magnetic Recording ◽  
Electron Probe ◽  
Microstructural Characterization ◽  
Crystallographic Structure ◽  
Recording Media ◽  
Layer By Layer ◽  
Cross Sectional ◽  
New Techniques ◽  
Polished Side

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.

Epitaxial growth manner and structure of superconducting oxide films

1990 ◽  
Vol 48 (4) ◽  
pp. 2-3
Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Film Surface ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Initial Growth ◽  
In Situ Growth ◽  
High Quality ◽  
Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

Compact back-scattered electrons' energy analyzer for standard SEM

1994 ◽  
Vol 52 ◽  
pp. 488-489
Author(s):  
S. Likharev ◽  
A. Kramarenko ◽  
V. Vybornov
Keyword(s):  
Depth Resolution ◽  
High Energy ◽  
Primary Beam ◽  
Layer By Layer ◽  
Energy Analyzer ◽  
High Energy Part ◽  
Small Window ◽  
Energy Part ◽  
Wide Range ◽  
High Voltage Supply

At present time the interest is growing considerably for theoretical and experimental analysis of back-scattered electrons (BSE) energy spectra. It was discovered that a special angle and energy nitration of BSE flow could be used for increasing a spatial resolution of BSE mode, sample topography investigations and for layer-by layer visualizing of a depth structure. In the last case it was shown theoretically that in order to obtain suitable depth resolution it is necessary to select a part of BSE flow with the directions of velocities close to inverse to the primary beam and energies within a small window in the high-energy part of the whole spectrum.A wide range of such devices has been developed earlier, but all of them have considerable demerit: they can hardly be used with a standard SEM due to the necessity of sufficient SEM modifications like installation of large accessories in or out SEM chamber, mounting of specialized detector systems, input wires for high voltage supply, screening a primary beam from additional electromagnetic field, etc. In this report we present a new scheme of a compact BSE energy analyzer that is free of imperfections mentioned above.

Transmission Electron Microscopy characterization of epitaxial III-V semiconductor thin films grown on Si(100) by ion-assisted deposition

1990 ◽  
Vol 48 (4) ◽  
pp. 686-687
Author(s):  
L. Hultman ◽  
C.-H. Choi ◽  
R. Kaspi ◽  
R. Ai ◽  
S.A. Barnett
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Irradiation ◽  
High Energy ◽  
Nucleation Mechanism ◽  
Layer By Layer ◽  
Extended Defect ◽  
Island Formation ◽  
Si Substrates ◽  
Transmission Electron

III-V semiconductor films nucleate by the Stranski-Krastanov (SK) mechanism on Si substrates. Many of the extended defects present in the films are believed to result from the island formation and coalescence stage of SK growth. We have recently shown that low (-30 eV) energy, high flux (4 ions per deposited atom), Ar ion irradiation during nucleation of III-V semiconductors on Si substrates prolongs the 1ayer-by-layer stage of SK nucleation, leading to a decrease in extended defect densities. Furthermore, the epitaxial temperature was reduced by >100°C due to ion irradiation. The effect of ion bombardment on the nucleation mechanism was explained as being due to ion-induced dissociation of three-dimensional islands and ion-enhanced surface diffusion.For the case of InAs grown at 380°C on Si(100) (11% lattice mismatch), where island formation is expected after ≤ 1 monolayer (ML) during molecular beam epitaxy (MBE), in-situ reflection high-energy electron diffraction (RHEED) showed that 28 eV Ar ion irradiation prolonged the layer-by-layer stage of SK nucleation up to 10 ML. Otherion energies maintained layer-by-layer growth to lesser thicknesses. The ion-induced change in nucleation mechanism resulted in smoother surfaces and improved the crystalline perfection of thicker films as shown by transmission electron microscopy and X-ray rocking curve studies.

Complex formation of modified chitosan and carboxymethyl cellulose and its effect on paper properties

TAPPI Journal ◽  
2009 ◽  
Vol 8 (6) ◽  
pp. 29-35 ◽  
Author(s):  
PEDRAM FATEHI ◽  
LIYING QIAN ◽  
RATTANA KITITERAKUN ◽  
THIRASAK RIRKSOMBOON ◽  
HUINING XIAO
Keyword(s):  
Carboxymethyl Cellulose ◽  
Polymer System ◽  
Layer By Layer ◽  
Paper Strength ◽  
Anionic Polymer ◽  
Paper Properties ◽  
Modified Chitosan ◽  
Layer By Layer Assembly ◽  
Polyelectrolyte Titration ◽  
Layer Assembly

The application of an oppositely charged dual polymer system is a promising approach to enhance paper strength. In this work, modified chitosan (MCN), a cationic polymer, and carboxymethyl cellulose (CMC), an anionic polymer, were used sequentially to improve paper strength. The adsorption of MCN on cellulose fibers was analyzed via polyelectrolyte titration. The formation of MCN/CMC complex in water and the deposition of this complex on silicon wafers were investigated by means of atomic force microscope and quasi-elastic light scattering techniques. The results showed that paper strength was enhanced slightly with a layer-by-layer assembly of the polymers. However, if the washing stage, which was required for layer-by-layer assembly, was eliminated, the MCN/CMC complex was deposited on fibers more efficiently, and the paper strength was improved more significantly. The significant improvement was attributed to the extra development of fiber bonding, confirmed further by scanning electron microscope observation of the bonding area of fibers treated with or without washing. However, the brightness of papers was somewhat decreased by the deposition of the complex on fibers. Higher paper strength also was achieved using rapid drying rather than air drying.

Evaluation of geometrical benchmark artifacts containing multiple overhang lengths fabricated using material extrusion technique

2020 ◽  
Vol 14 (3) ◽  
pp. 7296-7308
Author(s):  
Siti Nur Humaira Mazlan ◽  
Aini Zuhra Abdul Kadir ◽  
N. H. A. Ngadiman ◽  
M.R. Alkahari
Keyword(s):  
3D Model ◽  
Laser Scanner ◽  
Dimensional Accuracy ◽  
Fused Deposition Modelling ◽  
Layer By Layer ◽  
Fused Deposition ◽  
Layer Technique ◽  
Subtractive Manufacturing ◽  
Manufacturing Features ◽  
Layer Problem

Fused deposition modelling (FDM) is a process of joining materials based on material entrusion technique to produce objects from 3D model using layer-by-layer technique as opposed to subtractive manufacturing. However, many challenges arise in the FDM-printed part such as warping, first layer problem and elephant food that was led to an error in dimensional accuracy of the printed parts especially for the overhanging parts. Hence, in order to investigate the manufacturability of the FDM printed part, various geometrical and manufacturing features were developed using the benchmarking artifacts. Therefore, in this study, new benchmarking artifacts containing multiple overhang lengths were proposed. After the benchmarking artifacts were developed, each of the features were inspected using 3D laser scanner to measure the dimensional accuracy and tolerances. Based on 3D scanned parts, 80% of the fabricated parts were fabricated within ±0.5 mm of dimensional accuracy as compared with the CAD data. In addition, the multiple overhang lengths were also successfully fabricated with a very significant of filament sagging observed.

High Temperature n- and p-type Doped Microcrystalline Silicon Layers Grown by VHF PECVD Layer-by-Layer Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Gordijn ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
High Temperatures ◽  
Continuous Wave ◽  
Hydrogen Plasma ◽  
Silicon Layer ◽  
Dark Conductivity ◽  
High Deposition Rate ◽  
Layer By Layer ◽  
Microcrystalline Silicon

AbstractDue to the high temperatures used for high deposition rate microcrystalline (μc-Si:H) and polycrystalline silicon, there is a need for compact and temperature-stable doped layers. In this study we report on films grown by the layer-by-layer method (LbL) using VHF PECVD. Growth of an amorphous silicon layer is alternated by a hydrogen plasma treatment. In LbL, the surface reactions are separated time-wise from the nucleation in the bulk. We observed that it is possible to incorporate dopant atoms in the layer, without disturbing the nucleation. Even at high substrate temperatures (up to 400°C) doped layers can be made microcrystalline. At these temperatures, in the continuous wave case, crystallinity is hindered, which is generally attributed to the out-diffusion of hydrogen from the surface and the presence of impurities (dopants).We observe that the parameter window for the treatment time for p-layers is smaller compared to n-layers. Moreover we observe that for high temperatures, the nucleation of p-layers is more adversely affected than for n-layers. Thin, doped layers have been structurally, optically and electrically characterized. The best n-layer made at 400°C, with a thickness of only 31 nm, had an activation energy of 0.056 eV and a dark conductivity of 2.7 S/cm, while the best p-layer made at 350°C, with a thickness of 29 nm, had an activation energy of 0.11 V and a dark conductivity of 0.1 S/cm. The suitability of these high temperature n-layers has been demonstrated in an n-i-p microcrystalline silicon solar cell with an unoptimized μc-Si:H i-layer deposited at 250°C and without buffer. The Voc of the cell is 0.48 V and the fill factor is 70 %.

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