MoS2-capped CuxS nanocrystals: a new heterostructured geometry of transition metal dichalcogenides for broadband optoelectronics

2019 ◽  
Vol 6 (3) ◽  
pp. 587-594 ◽  
Author(s):  
Yuan Li ◽  
Akshay A. Murthy ◽  
Jennifer G. DiStefano ◽  
Hee Joon Jung ◽  
Shiqiang Hao ◽  
...  
Keyword(s):  
Transition Metal ◽  
Performance Improvement ◽  
Transition Metal Dichalcogenides ◽  
Band Alignment ◽  
Next Generation ◽  
Semiconductor Electronics ◽  
Metal Dichalcogenides ◽  
And Performance

Heterostructuring of different transition metal dichalcogenides (TMDs) leads to interesting band alignment and performance improvement, and thus enables new routes for the development of materials for next-generation semiconductor electronics.

Tailorable multifunctionalities in ultrathin 2D Bi-based layered supercell structures

Nanoscale ◽  
2021 ◽  
Author(s):  
Zihao He ◽  
Xingyao Gao ◽  
Di Zhang ◽  
Ping Lu ◽  
Xuejing Wang ◽  
...  
Keyword(s):  
Transition Metal ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Ferromagnetic Behavior ◽  
Two Dimensional ◽  
Next Generation ◽  
Layered Oxide ◽  
Nanoelectronic Devices ◽  
Potential Applications ◽  
Metal Dichalcogenides

Two-dimensional (2D) materials with robust ferromagnetic behavior have attracted great interest because of their potential applications in next-generation nanoelectronic devices. Aside from graphene and transition metal dichalcogenides, Bi-based layered oxide...

Highly-efficient heterojunction solar cells based on two-dimensional tellurene and transition metal dichalcogenides

2019 ◽  
Vol 7 (13) ◽  
pp. 7430-7436 ◽  
Author(s):  
Kai Wu ◽  
Huanhuan Ma ◽  
Yunzhi Gao ◽  
Wei Hu ◽  
Jinlong Yang
Keyword(s):  
Solar Cells ◽  
Transition Metal ◽  
Charge Separation ◽  
Transition Metal Dichalcogenides ◽  
Band Alignment ◽  
Type Ii ◽  
Two Dimensional ◽  
Heterojunction Solar Cells ◽  
Highly Efficient ◽  
Metal Dichalcogenides

Tellurene and TMDs show desirable type II band alignment for constructing highly-efficient heterojunction solar cells with strong charge separation and enhanced sunlight absorption.

scholarly journals Giant optical anisotropy in transition metal dichalcogenides for next-generation photonics

2020 ◽  
Author(s):  
Georgy Ermolaev ◽  
D. Grudinin ◽  
Y. Stebunov ◽  
K. Voronin ◽  
Vasyl Kravets ◽  
...  
Keyword(s):  
Transition Metal ◽  
Optical Anisotropy ◽  
Near Infrared ◽  
Near Field ◽  
Transition Metal Dichalcogenides ◽  
Next Generation ◽  
Infrared Wavelength ◽  
Infrared Spectral ◽  
Metal Dichalcogenides ◽  
On Chip

Abstract Large optical anisotropy observed in a broad spectral range is of paramount importance for efficient light manipulation in countless devices. Although a giant anisotropy was recently observed in the mid-infrared wavelength range, for visible and near-infrared spectral intervals, the problem remains acute with the highest reported birefringence values of 0.8 in BaTiS3 and h-BN crystals. This inspired an intensive search for giant optical anisotropy among natural and artificial materials. Here, we demonstrate that layered transition metal dichalcogenides (TMDCs) provide an answer to this quest owing to their fundamental differences between intralayer strong covalent bonding and weak interlayer van der Walls interaction. To do this, we carried out a correlative far- and near-field characterization validated by first-principle calculations that reveals an unprecedented birefringence of 1.5 in the infrared and 3 in the visible light for MoS2. Our findings demonstrate that this outstanding anisotropy allows for tackling the diffraction limit enabling an avenue for on-chip next-generation photonics.

scholarly journals Atomic–layer–confined multiple quantum wells enabled by monolithic bandgap engineering of transition metal dichalcogenides

2021 ◽  
Vol 7 (13) ◽  
pp. eabd7921
Author(s):  
Yoon Seok Kim ◽  
Sojung Kang ◽  
Jae-Pil So ◽  
Jong Chan Kim ◽  
Kangwon Kim ◽  
...  
Keyword(s):  
Transition Metal ◽  
Quantum Wells ◽  
Building Block ◽  
Transition Metal Dichalcogenides ◽  
Atomic Layer ◽  
Band Alignment ◽  
Type I ◽  
Bandgap Engineering ◽  
Strong Light ◽  
Metal Dichalcogenides

Quantum wells (QWs), enabling effective exciton confinement and strong light-matter interaction, form an essential building block for quantum optoelectronics. For two-dimensional (2D) semiconductors, however, constructing the QWs is still challenging because suitable materials and fabrication techniques are lacking for bandgap engineering and indirect bandgap transitions occur at the multilayer. Here, we demonstrate an unexplored approach to fabricate atomic–layer–confined multiple QWs (MQWs) via monolithic bandgap engineering of transition metal dichalcogenides and van der Waals stacking. The WOX/WSe2 hetero-bilayer formed by monolithic oxidation of the WSe2 bilayer exhibited the type I band alignment, facilitating as a building block for MQWs. A superlinear enhancement of photoluminescence with increasing the number of QWs was achieved. Furthermore, quantum-confined radiative recombination in MQWs was verified by a large exciton binding energy of 193 meV and a short exciton lifetime of 170 ps. This work paves the way toward monolithic integration of band-engineered heterostructures for 2D quantum optoelectronics.

scholarly journals Giant optical anisotropy in transition metal dichalcogenides for next-generation photonics

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
G. A. Ermolaev ◽  
D. V. Grudinin ◽  
Y. V. Stebunov ◽  
K. V. Voronin ◽  
V. G. Kravets ◽  
...  
Keyword(s):  
Transition Metal ◽  
Optical Anisotropy ◽  
Near Infrared ◽  
Near Field ◽  
Transition Metal Dichalcogenides ◽  
Next Generation ◽  
Infrared Wavelength ◽  
Infrared Spectral ◽  
Metal Dichalcogenides ◽  
On Chip

AbstractLarge optical anisotropy observed in a broad spectral range is of paramount importance for efficient light manipulation in countless devices. Although a giant anisotropy has been recently observed in the mid-infrared wavelength range, for visible and near-infrared spectral intervals, the problem remains acute with the highest reported birefringence values of 0.8 in BaTiS3 and h-BN crystals. This issue inspired an intensive search for giant optical anisotropy among natural and artificial materials. Here, we demonstrate that layered transition metal dichalcogenides (TMDCs) provide an answer to this quest owing to their fundamental differences between intralayer strong covalent bonding and weak interlayer van der Waals interaction. To do this, we made correlative far- and near-field characterizations validated by first-principle calculations that reveal a huge birefringence of 1.5 in the infrared and 3 in the visible light for MoS2. Our findings demonstrate that this remarkable anisotropy allows for tackling the diffraction limit enabling an avenue for on-chip next-generation photonics.

scholarly journals Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

2013 ◽  
Vol 103 (5) ◽  
pp. 053513 ◽  
Author(s):  
Cheng Gong ◽  
Hengji Zhang ◽  
Weihua Wang ◽  
Luigi Colombo ◽  
Robert M. Wallace ◽  
...  
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenides ◽  
Band Alignment ◽  
Two Dimensional ◽  
Metal Dichalcogenides
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