Ultra-high precision silicon isotope micro-analysis using a Cameca IMS-1280 SIMS instrument by eliminating the topography effect

2019 ◽  
Vol 34 (5) ◽  
pp. 906-914 ◽  
Author(s):  
Yu Liu ◽  
Xian-Hua Li ◽  
Guo-Qiang Tang ◽  
Qiu-Li Li ◽  
Xiao-Chi Liu ◽  
...  
Keyword(s):  
High Precision ◽  
Ion Beam ◽  
Sample Surface ◽  
Silicon Isotope ◽  
Surface Flatness ◽  
Additional Correction ◽  
Major Factors ◽  
Micro Analysis ◽  
Secondary Ion ◽  
Very High

During very high precision analyses using SIMS, sample surface flatness is one of the major factors in degradation of external analytical repeatability. An additional correction using a secondary ion beam centering parameter (DTCA-X) was used to minimize this. External precision and accuracy were improved.

The Basic Physical Principles of Ion, Electron, and X-Ray Detectors and Their Application to Microanalysis

1985 ◽  
Vol 43 ◽  
pp. 154-157
Author(s):  
A.J. Tousimis
Keyword(s):  
Ion Beam ◽  
Depth Resolution ◽  
Sample Surface ◽  
High Energy ◽  
X Rays ◽  
X Ray ◽  
Electrons And Ions ◽  
Spatial Depth ◽  
Minimum Surface Area ◽  
Physical Principles

An integral and of prime importance of any microtopography and microanalysis instrument system is its electron, x-ray and ion detector(s). The resolution and sensitivity of the electron microscope (TEM, SEM, STEM) and microanalyzers (SIMS and electron probe x-ray microanalyzers) are closely related to those of the sensing and recording devices incorporated with them.Table I lists characteristic sensitivities, minimum surface area and depth analyzed by various methods. Smaller ion, electron and x-ray beam diameters than those listed, are possible with currently available electromagnetic or electrostatic columns. Therefore, improvements in sensitivity and spatial/depth resolution of microanalysis will follow that of the detectors. In most of these methods, the sample surface is subjected to a stationary, line or raster scanning photon, electron or ion beam. The resultant radiation: photons (low energy) or high energy (x-rays), electrons and ions are detected and analyzed.

Analysis of Voltage Contrast in Secondary Electron Images Using a High-Energy Electron Spectrometer

2019 ◽  
Author(s):  
Natsuko Asano ◽  
Shunsuke Asahina ◽  
Natasha Erdman
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Sample Surface ◽  
High Energy ◽  
Secondary Electrons ◽  
Analysis Technique ◽  
Quantitative Understanding ◽  
Voltage Contrast ◽  
Acceleration Voltage ◽  
Failure Localization

Abstract Voltage contrast (VC) observation using a scanning electron microscope (SEM) or a focused ion beam (FIB) is a common failure analysis technique for semiconductor devices.[1] The VC information allows understanding of failure localization issues. In general, VC images are acquired using secondary electrons (SEs) from a sample surface at an acceleration voltage of 0.8–2.0 kV in SEM. In this study, we aimed to find an optimized electron energy range for VC acquisition using Auger electron spectroscopy (AES) for quantitative understanding.

An Effective SIMS Methodology for GOI Contamination Analysis

2013 ◽  
Author(s):  
Yanhua Huang ◽  
Lei Zhu ◽  
Kenny Ong ◽  
Hanwei Teo ◽  
Younan Hua
Keyword(s):  
Oxide Layer ◽  
Secondary Ion Mass Spectrometry ◽  
Gate Oxide ◽  
Sample Surface ◽  
Low Energy ◽  
Cross Contamination ◽  
Common Effect ◽  
Sims Analysis ◽  
Secondary Ion ◽  
Lower Background

Abstract Contamination in the gate oxide layer is the most common effect which cause the gate oxide integrate (GOI) issue. Dynamic Secondary Ion Mass Spectrometry (SIMS) is a mature tool for GOI contamination analysis. During the sample preparation, all metal and IDL layers above poly should be removed because the presence of these layers added complexity for the subsequent SIMS analysis. The normal delayering process is simply carried out by soaking the sample in the HF solution. However, the poly surface is inevitably contaminated by surroundings even though it is already a practice to clean with DI rinse and tape. In this article, TOFSIMS with low energy sputter gun is used to clean the sample surface after the normal delayering process. The residue signals also can be monitored by TOF SIMS during sputtering to confirm the cross contamination is cleared. After that, a much lower background desirable by dynamic SIMS. Thus an accurate depth profile in gate oxide layer can be achieved without the interference from surface.

FIB Micromachining and Nano-Structure Fabrication

1999 ◽  
Author(s):  
Raymond A. Lee ◽  
Patrick J. Wolpert
Keyword(s):  
High Precision ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Biological Applications ◽  
Optical Lens ◽  
Nano Structure ◽  
Beam System ◽  
Afm Tips ◽  
Established Technique ◽  
Made In

Abstract FIB Micromachining has long been an established technique, but until recently it has been overshadowed by the more mainstream semiconductor application of the Focused Ion Beam system. Nano- Structure fabrication using the FIB system has become more popular recently due to several factors. The need for sub-micron structures have grown significantly due to a need for enhanced optical and biological applications. Another reason for the growth in micromachining is the improvement made in the ability of FIB systems to produce geometric shapes with high precision. With the latest high-end FIB systems, it is possible to produce microstructures with tens of nano-meters of precision. Optical lens, AFM tips, and nano-apertures are all part of the growing application for FIB Micromachining. This paper will discuss the ability and limitations of the FIB system and some possible application for FIB Micromachining.

scholarly journals Separate Universe calibration of the dependence of halo bias on cosmic web anisotropy

2020 ◽  
Vol 499 (3) ◽  
pp. 4418-4431 ◽  
Author(s):  
Sujatha Ramakrishnan ◽  
Aseem Paranjape
Keyword(s):  
Dark Matter ◽  
High Precision ◽  
Gaussian Distribution ◽  
Initial Perturbation ◽  
Analytical Framework ◽  
Web Environment ◽  
Wide Range ◽  
Galaxy Assembly ◽  
Very High ◽  
Good Agreement

ABSTRACT We use the Separate Universe technique to calibrate the dependence of linear and quadratic halo bias b1 and b2 on the local cosmic web environment of dark matter haloes. We do this by measuring the response of halo abundances at fixed mass and cosmic web tidal anisotropy α to an infinite wavelength initial perturbation. We augment our measurements with an analytical framework developed in earlier work that exploits the near-lognormal shape of the distribution of α and results in very high precision calibrations. We present convenient fitting functions for the dependence of b1 and b2 on α over a wide range of halo mass for redshifts 0 ≤ z ≤ 1. Our calibration of b2(α) is the first demonstration to date of the dependence of non-linear bias on the local web environment. Motivated by previous results that showed that α is the primary indicator of halo assembly bias for a number of halo properties beyond halo mass, we then extend our analytical framework to accommodate the dependence of b1 and b2 on any such secondary property that has, or can be monotonically transformed to have, a Gaussian distribution. We demonstrate this technique for the specific case of halo concentration, finding good agreement with previous results. Our calibrations will be useful for a variety of halo model analyses focusing on galaxy assembly bias, as well as analytical forecasts of the potential for using α as a segregating variable in multitracer analyses.

scholarly journals Equipartition principle for Wigner matrices

2021 ◽  
Vol 9 ◽  
Author(s):  
Zhigang Bao ◽  
László Erdős ◽  
Kevin Schnelli
Keyword(s):  
High Precision ◽  
Quantum Systems ◽  
Wigner Matrices ◽  
Very High

Abstract We prove that the energy of any eigenvector of a sum of several independent large Wigner matrices is equally distributed among these matrices with very high precision. This shows a particularly strong microcanonical form of the equipartition principle for quantum systems whose components are modelled by Wigner matrices.

MeV Self Ion Beam Induced Amorphisation of Silicon Carbide Surfaces and Its Effect on Their Trdbomechanical Propertdzs

1991 ◽  
Vol 235 ◽  
Author(s):  
D. K. Sood ◽  
V. C. Nath ◽  
Yang Xi
Keyword(s):  
Silicon Carbide ◽  
Raman Scattering ◽  
High Precision ◽  
Friction And Wear ◽  
Ion Beam ◽  
Steel Ball ◽  
Carbon Ions ◽  
Ion Energy ◽  
Number Of Cycles ◽  
Tribomechanical Properties

ABSTRACTAmorphisation of sintered SiC by bombardment with self (C, Si) ions has been studied. Ion doses ranged from 1×1015 to 1×1017 ions/cm2; and ion energy was varied from 0.09 to 5 MeV. Amorphisation was detected by micro-focus Raman scattering. Tribomechanical properties-friction and wear were studied with a high precision pin (steel ball) and disc (implanted) machine. Results show substantial improvements in friction and wear, which persist to a large number of cycles. Tribomechanical properties are shown to correlate with surface amorphisation and carburisation. Carbon ions are found to be much more effective than Si ions (with similar damage distributions) in reducing friction and wear.

Investigation of Ge, As, and Au Diffusion in Non-Alloyed Epitaxial Au-Ge Ohmic Contacts to n-GaAs Using Secondary Ion Mass Spectroscopy Backside Sputter Depth-Profiling

1991 ◽  
Vol 240 ◽  
Author(s):  
H. S. LEE ◽  
R. T. Lareau ◽  
S. N. Schauer ◽  
R. P. Moerkirk ◽  
K. A. Jones ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
High Concentration ◽  
Ohmic Behavior ◽  
Preferential Sputtering ◽  
Specific Contact ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTA SIMS backside sputter depth-profile technique using marker layers is employed to characterize the diffusion profiles of the Ge, As, and Au in the Au-Ge contacts after annealing at 320 C for various times. This technique overcomes difficulties such as ion beam mixing and preferential sputtering and results in high depth resolution measurements since diffusion profiles are measured from low to high concentration. Localized reactions in the form of islands were observed across the surface of the contact after annealing and were composed of Au, Ge, and As, as determined by SIMS imaging and Auger depth profiling. Backside SIMS profiles indicate both Ge and Au diffusion into the GaAs substrate in the isalnd regions. Ohmic behavior was obtained after a 3 hour anneal with a the lowest average specific contact resistivity found to be ∼ 7 × 100−6 Ω- cm2.

Formation flying for very high precision astrometry: NEAT and micro-NEAT mission concepts

2014 ◽  
Vol 2 (1) ◽  
pp. 3 ◽  
Author(s):  
Fabien Malbet ◽  
Alexis Brandeker ◽  
Alain Léger ◽  
Bjorn Jakobsson ◽  
Renaud Goullioud ◽  
...  
Keyword(s):  
High Precision ◽  
Formation Flying ◽  
Very High ◽  
Precision Astrometry

Planar structures of nano-voids in volume of a crystal

2021 ◽  
Author(s):  
E.A. Stepantsov
Keyword(s):  
Plastic Deformation ◽  
High Precision ◽  
Solid Phase ◽  
Crystal Surface ◽  
Ion Beam ◽  
Photonic Devices ◽  
Planar Structure ◽  
Compression Pressure ◽  
Planar Structures ◽  
Developed Surface

It was studied the possibility of solid phase intergrowth of optical Y-ZrO2 crystals with preliminarily developed one of their two contacting surfaces. The developing included creation of determined relief by argon ion beam milling through a mask with determined layout. The process of solid phase intergrowth of crystals with such developed surfaces was fulfilled in the same conditions, which were used at the similar procedure for crystals with undeveloped surfaces. During the process crystal samples were put together in contact in parallel crystallographic orientation along preliminary polished and etched surfaces. Then they were heated in vacuum up to temperature 1600°С. After that they were pressed to each other up to pressure 1.4 kN/mm2 for 4 hours with further cooling with rate 10°С/min down to room temperature. Decreasing of effective square of contacting surfaces on a value of total square of etched relief picture was taken into account at calculating of compression pressure. It was found out that solid phase intergrowth on undeveloped parts of the surfaces was realized with the same result, as it was in case of solid phase intergrowth of Y-ZrO2 crystals, the contacting surfaces of which had not been developed by Ar beam milling. It was shown that nano-voids is formed at the rest parts of the contacting surfaces of crystalline specimens during their solid phase intergrowth. As a result a planar structure of nano-voids is created in a volume of a crystal, fabricated by solid phase intergrowth of two crystalline samples with preliminarily developed surface of one of them by argon beam milling through special mask. It was demonstrated that a configuration of nano-voids planar structure corresponds to a picture of the relief of the developed crystal surface with precision not worse than +/- 1 µ. By chemical etching for dislocation holes of the crystal side surfaces, which are perpendicular to a plane of a planar structure of nano-voids, it was demonstrated that during of solid phase intergrowth process plastic deformation of the material did not have place even on micro-level, corresponding to thickness of etched relief. Full absence of even weak traces of plastic deformation in the zone of crystal specimen intergrowth is an explanation of so high precision correspondance of etched relief to configuration of planar structure of nono-voids. The shown results demonstrate the possibility of creation a planar structure of nano-voids inside of a crystal, corresponding to in advance determined picture with so high precision, that it gives new possibilities in designing of photonic devices.

Sign in / Sign up

Export Citation Format

Share Document