The deposition of cadmium selenide and cadmium phosphide thin films from cadmium thioselenoimidodiphosphinate by AACVD and the formation of an aromatic species

2019 ◽  
Vol 48 (4) ◽  
pp. 1436-1442 ◽  
Author(s):  
Temidayo Oyetunde ◽  
Mohammad Afzaal ◽  
Mark A. Vincent ◽  
Paul O'Brien
Keyword(s):  
Thin Films ◽  
Cadmium Selenide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Flow Rates ◽  
Glass Substrates ◽  
Argon Flow ◽  
Aromatic Species

Aerosol-assisted chemical vapour deposition (AACVD) of Cd[(SPiPr2)(SePiPr2)N]2 yields hexagonal cadmium selenide and monoclinic cadmium phosphide films on glass substrates between 475 and 525 °C at different argon flow rates.

scholarly journals Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

2018 ◽  
Vol 6 (3) ◽  
pp. 588-597 ◽  
Author(s):  
Dominic B. Potter ◽  
Michael J. Powell ◽  
Ivan P. Parkin ◽  
Claire J. Carmalt
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Zno Thin Films ◽  
Glass Substrates ◽  
Doped Zno ◽  
Indium Gallium ◽  
Co Doped

Aluminium/gallium co-doped ZnO (AGZO), indium/gallium co-doped ZnO (IGZO), and aluminium/indium co-doped ZnO (AIZO) thin films were synthesised on glass substrates via aerosol assisted chemical vapour deposition (AACVD).

Aerosol assisted chemical vapour deposition of transparent conductive ZnO thin films with hexagonal microplate surfaces and ultrahigh haze values

2015 ◽  
Vol 3 (44) ◽  
pp. 22311-22315 ◽  
Author(s):  
Shuqun Chen ◽  
Martyn McLachlan ◽  
Andrei Sapelkin ◽  
Russell Binions
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Silica Glass ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Zno Thin Films ◽  
Textured Surfaces ◽  
Glass Substrates

Aerosol assisted chemical vapour deposition has been used to fabricate transparent conductive ZnO thin films with highly hexagonal, textured surfaces and ultra high haze on silica glass substrates.

New Approach Towards The Deposition of I-III-VI Thin Films

2001 ◽  
Vol 692 ◽  
Author(s):  
Mohammad Afzaal ◽  
David Crouch ◽  
Paul O'Brien ◽  
Jin-Ho Park
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
High Efficiency ◽  
Chemical Vapour ◽  
One Pot ◽  
Optimum Growth Temperature ◽  
Glass Substrates ◽  
Show Evidence ◽  
Organometallic Precursors

AbstractThe ternary chalcopyrite semiconductor Cu(In/Ga)(Se/S)2 is currently used as an absorber layer in high efficiency thin film solar cells. In this study, various types of I-III-VI (I = Cu, III = Ga or In, VI = S or Se) thin films (CuGaS2, CuInS2 and CuInSe2) were prepared from a series of organometallic precursors, M[(S/Se)2CNMeR]n (M = Cu, In, Ga; R = alkyl) by aerosol-assisted chemical vapour deposition (AACVD). In contrast to the metal alkyl compounds, MR3 (M = In and Ga; R = alkyl), which are pyrophoric, the precursors are easy to synthesize by one-pot reactions and are air stable. The optimum growth temperature for the preparation of these films on glass substrates using aerosol-assisted chemical vapour deposition (AACVD) was found to be above 400 °C in terms of crystallinity, although deposition does occur at lower temperatures. The films have been characterised using XRPD, SEM and EDS. SEM analyses show all films are microcrystalline. XRPD results show evidence of the crystalline nature of theses films. The results of this comprehensive study are presented and discussed.

scholarly journals Transparent conductive aluminium and fluorine co-doped zinc oxide films via aerosol assisted chemical vapour deposition

RSC Advances ◽  
2014 ◽  
Vol 4 (91) ◽  
pp. 49723-49728 ◽  
Author(s):  
Sapna D. Ponja ◽  
Sanjayan Sathasivam ◽  
Ivan P. Parkin ◽  
Claire J. Carmalt
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Zno Thin Films ◽  
Glass Substrates ◽  
Zinc Oxide Films ◽  
Doped Zno ◽  
Co Doped

Aerosol assisted chemical vapour deposition (AACVD) was employed to synthesise highly transparent and conductive ZnO, fluorine or aluminium doped and aluminium–fluorine co-doped ZnO thin films on glass substrates at 450 °C.

scholarly journals A solution based route to GaAs thin films from As(NMe2)3 and GaMe3 for solar cells

RSC Advances ◽  
2015 ◽  
Vol 5 (16) ◽  
pp. 11812-11817 ◽  
Author(s):  
Sanjayan Sathasivam ◽  
Ranga R. Arnepalli ◽  
Kaushal K. Singh ◽  
Robert J. Visser ◽  
Christopher S. Blackman ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
The Novel ◽  
Glass Substrates

The novel deposition of GaAs thin films on glass substrates from a solution based route involving the aerosol assisted chemical vapour deposition (AACVD) of As(NMe2)3 and GaMe3 dissolved in toluene is reported.

scholarly journals Synthesis and characterization of mixed phase anatase TiO2 and sodium-doped TiO2(B) thin films by low pressure chemical vapour deposition (LPCVD)

RSC Advances ◽  
2014 ◽  
Vol 4 (89) ◽  
pp. 48507-48515 ◽  
Author(s):  
Yothin Chimupala ◽  
Geoffrey Hyett ◽  
Robert Simpson ◽  
Robert Mitchell ◽  
Richard Douthwaite ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Anatase Tio2 ◽  
Mixed Phase ◽  
Glass Substrates ◽  
Pressure Chemical

Mixed phase anatase TiO2 and TiO2(B) thin films were synthesized using Low Pressure Chemical Vapour Deposition (LPCVD) onto glass substrates.

scholarly journals The aerosol assisted chemical vapour deposition of SnSe and Cu2SnSe3thin films from molecular precursors

2014 ◽  
Vol 50 (92) ◽  
pp. 14328-14330 ◽  
Author(s):  
Punarja Kevin ◽  
Sajid N. Malik ◽  
Mohammad A. Malik ◽  
Paul O'Brien
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Molecular Precursors ◽  
Glass Substrates

SnSe and Cu2SnSe3thin films have been deposited onto glass substrates by AACVD from molecular precursors.

Metal-Organic Chemical Vapour Deposition of II-VI Semiconductor Thin Films Using Single-Source Approach

2002 ◽  
Vol 730 ◽  
Author(s):  
Mohammad Afzaal ◽  
David Crouch ◽  
Paul O'Brien ◽  
Jin-Ho Park
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Metal Chalcogenides ◽  
Single Source ◽  
Glass Substrates ◽  
Semiconductor Thin Films ◽  
Metal Organic

AbstractThin films of CdS and CdSe have been deposited on glass substrates by low pressure metal-organic chemical vapour deposition (LP-MOCVD) using Cd[(EPiPr2)2N]2 (E = S, Se) as single-source precursors. These air-stable precursors are volatile, making them suitable for the deposition of thin films. As-deposited films were crystalline metal chalcogenides, as confirmed by X-ray powder diffraction (XRD), and their morphologies were studied by scanning electron microscopy (SEM).

scholarly journals Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′)2] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate)

RSC Advances ◽  
2021 ◽  
Vol 11 (36) ◽  
pp. 22199-22205
Author(s):  
Rachel L. Wilson ◽  
Thomas J. Macdonald ◽  
Chieh-Ting Lin ◽  
Shengda Xu ◽  
Alaric Taylor ◽  
...  
Keyword(s):  
Thin Films ◽  
Nickel Oxide ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hole Transport ◽  
Blocking Layer ◽  
The Novel ◽  
Electron Blocking Layer

We describe CVD of nickel oxide (NiO) thin films using a new precursor [Ni(dmamp′)2], synthesised using a readily commercially available dialkylaminoalkoxide ligand (dmamp′), which is applied to synthesis of a hole transport-electron blocking layer.

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