Metal-Organic Chemical Vapour Deposition of II-VI Semiconductor Thin Films Using Single-Source Approach
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AbstractThin films of CdS and CdSe have been deposited on glass substrates by low pressure metal-organic chemical vapour deposition (LP-MOCVD) using Cd[(EPiPr2)2N]2 (E = S, Se) as single-source precursors. These air-stable precursors are volatile, making them suitable for the deposition of thin films. As-deposited films were crystalline metal chalcogenides, as confirmed by X-ray powder diffraction (XRD), and their morphologies were studied by scanning electron microscopy (SEM).
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2006 ◽
Vol 16
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pp. 966-969
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1999 ◽
Vol 204
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pp. 91-96
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2002 ◽
Vol 27
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pp. 61-68
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2000 ◽
Vol 62
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pp. 179-182
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2002 ◽
Vol 151-152
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pp. 36-41
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