Two-dimensional transition metal dichalcogenides: interface and defect engineering

2018 ◽  
Vol 47 (9) ◽  
pp. 3100-3128 ◽  
Author(s):  
Zehua Hu ◽  
Zhangting Wu ◽  
Cheng Han ◽  
Jun He ◽  
Zhenhua Ni ◽  
...  
Keyword(s):  
Optical Properties ◽  
Transition Metal ◽  
Electronic Devices ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Defect Engineering ◽  
Electronic And Optical Properties ◽  
Recent Advances ◽  
Metal Dichalcogenides

This review summarizes the recent advances in understanding the effects of interface and defect engineering on the electronic and optical properties of TMDCs, as well as their applications in advanced (opto)electronic devices.

Synergistic vacancy defects and mechanical strain for the modulation of the mechanical, electronic and optical properties of monolayer tungsten disulfide

2021 ◽  
Vol 23 (10) ◽  
pp. 6298-6308
Author(s):  
Chan Gao ◽  
Xiaoyong Yang ◽  
Ming Jiang ◽  
Lixin Chen ◽  
Zhiwen Chen ◽  
...  
Keyword(s):  
Optical Properties ◽  
Transition Metal ◽  
Mechanical Strain ◽  
Transition Metal Dichalcogenides ◽  
Strain Engineering ◽  
Tungsten Disulfide ◽  
Defect Engineering ◽  
Vacancy Defects ◽  
Electronic And Optical Properties ◽  
Metal Dichalcogenides

The combination of defect engineering and strain engineering for the modulation of the mechanical, electronic and optical properties of monolayer transition metal dichalcogenides (TMDs).

scholarly journals Towards the evaluation of defects in MoS2 using cryogenic photoluminescence spectroscopy

Nanoscale ◽  
2020 ◽  
Vol 12 (5) ◽  
pp. 3019-3028 ◽  
Author(s):  
Tim Verhagen ◽  
Valentino L. P. Guerra ◽  
Golam Haider ◽  
Martin Kalbac ◽  
Jana Vejpravova
Keyword(s):  
Optical Properties ◽  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Photoluminescence Spectroscopy ◽  
Two Dimensional ◽  
Electronic And Optical Properties ◽  
Metal Dichalcogenides

Electronic and optical properties of two-dimensional transition metal dichalcogenides are strongly influenced by defects. Cryogenic photoluminescence spectroscopy is a superb tool for characterization of the nature and density of these defects.

Interface engineering of two-dimensional transition metal dichalcogenides towards next-generation electronic devices: recent advances and challenges

2020 ◽  
Vol 5 (5) ◽  
pp. 787-807 ◽  
Author(s):  
Wugang Liao ◽  
Siwen Zhao ◽  
Feng Li ◽  
Cong Wang ◽  
Yanqi Ge ◽  
...  
Keyword(s):  
Transition Metal ◽  
Electronic Devices ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Next Generation ◽  
Interface Engineering ◽  
Recent Advances ◽  
Metal Dichalcogenides

This review presents recent advances and challenges in the interface engineering of 2D TMDCs and emerging electronics based on TMDCs.

Structural, Electronic and Optical Properties of Transition Metal Dichalcogenides Layer PtS2 (Se2) for Nano Devices Applications

2021 ◽  
Vol 886 ◽  
pp. 48-56
Author(s):  
Rusul A. Ghazi ◽  
Dhay Ali Sabur ◽  
Ruaa S. Al-Hasnawy ◽  
Haider O. Muhsen ◽  
Bahjat B. Kadhim ◽  
...  
Keyword(s):  
Optical Properties ◽  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Band Gaps ◽  
Two Dimensional ◽  
Electronic And Optical Properties ◽  
New Class ◽  
Metal Dichalcogenides ◽  
Direct Band ◽  
Indirect Band Gap

Monolayer materials are promising material in applications, such as possess some layers with sturdy in-plane bonds. These materials represents two-dimensional (2D) materials which are possess a vertical weak Van der Waals (VdW) interactions sandwiched among the neighboring sheets. These structures of layers offer the chance to be split to free atomic layers. So new class material with two dimensional transition metal dichalcogenides which includes PtS2 (Se2) have unique geometric structural, electronic and optical properties are studied. It has attracted the attention of many researchers for its extensive applications in (catalysis, sensing, electronics, and optoelectronics devices). It has been disclosed from the outcomes that these monolayers are dynamically stable according to the phonon calculations. Also, the direct band gaps located at K point for MoS2 and MoSe2 are 1.67 eV and 1.484 eV and for PtS2 and PtSe2 located between Γ-M points are 1.887 and 1.66, respectively. Also, the PtS2 have indirect band gap of about 1.775 eV situated at KΓ- ΓM and for PtSe2 is 1.401 eV at Γ- ΓM path. The results show that the maximum absorption coefficients are between 14×104 and 16.4×104 cm-1 for PtS2 and MoSe2, respectively. Besides, the maximum conductivities are between 2.09×101 and 3.65×1015 1/s for PtSe2 and MoS2, and the major values Likewise, the optical properties determined over rang energy 0.30 eV. The work function is equal 6.197eV for PtS2 and 5.628eV for PtSe2. It has been shown by studying photon dispersion of both monolayers that it is stable because it does not contain imaginary frequencies.

Intriguing electronic and optical properties of two-dimensional Janus transition metal dichalcogenides

2018 ◽  
Vol 20 (27) ◽  
pp. 18571-18578 ◽  
Author(s):  
Jun Wang ◽  
Haibo Shu ◽  
Tianfeng Zhao ◽  
Pei Liang ◽  
Ning Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Transition Metal ◽  
Electronic Transport ◽  
Transition Metal Dichalcogenides ◽  
Asymmetric Structure ◽  
Two Dimensional ◽  
Electronic And Optical Properties ◽  
Metal Dichalcogenides ◽  
Optoelectronic Applications

Two-dimensional Janus transition metal dichalcogenides with an asymmetric structure present intriguing electronic, transport, and optical properties, which make them ideally suitable for electronic and optoelectronic applications.

scholarly journals Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Lei Yin ◽  
Peng He ◽  
Ruiqing Cheng ◽  
Feng Wang ◽  
Fengmei Wang ◽  
...  
Keyword(s):  
Transition Metal ◽  
High Performance ◽  
Infrared Detector ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Electric Transport ◽  
Defect Engineering ◽  
Fast Switching ◽  
Metal Dichalcogenides ◽  
Poor Stability

Abstract Defects play a crucial role in determining electric transport properties of two-dimensional transition metal dichalcogenides. In particular, defect-induced deep traps have been demonstrated to possess the ability to capture carriers. However, due to their poor stability and controllability, most studies focus on eliminating this trap effect, and little consideration was devoted to the applications of their inherent capabilities on electronics. Here, we report the realization of robust trap effect, which can capture carriers and store them steadily, in two-dimensional MoS2xSe2(1-x) via synergistic effect of sulphur vacancies and isoelectronic selenium atoms. As a result, infrared detection with very high photoresponsivity (2.4 × 105 A W−1) and photoswitching ratio (~108), as well as nonvolatile infrared memory with high program/erase ratio (~108) and fast switching time, are achieved just based on an individual flake. This demonstration of defect engineering opens up an avenue for achieving high-performance infrared detector and memory.

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