scholarly journals Analysis of the interfacial characteristics of BiVO4/metal oxide heterostructures and its implication on their junction properties

2019 ◽  
Vol 21 (9) ◽  
pp. 5086-5096 ◽  
Author(s):  
Yannick Hermans ◽  
Sebastián Murcia-López ◽  
Andreas Klein ◽  
Roel van de Krol ◽  
Teresa Andreu ◽  
...  

Throughin situphotoelectron spectroscopy, the interface properties of BiVO4/NiO, BiVO4/CoOxand BiVO4/ITO were investigated.

2015 ◽  
Vol 29 (04) ◽  
pp. 1530002 ◽  
Author(s):  
A. R. Chourasia ◽  
Jacob Stahl

The technique of X-ray photoelectron spectroscopy has been used to investigate the chemical reactivity at the metal/ CuO interfaces. Thin films of the metallic overlayer (0.5 nm, 1.0 nm and 2.0 nm thickness) were deposited on copper oxide substrates at room temperature. In situ characterization of the interfaces has been performed. The 2p core level regions of the metals have been investigated. The spectral features show considerable reactivity at the interfaces. The core level peaks of the metal are observed to be shifted to the high BE energy side with the appearance of satellites. The spectral data confirm the formation of the metallic oxide at the interface. The satellite structure in the copper region is observed to disappear and the spectral features are found to approach those of elemental copper. The room temperature deposition of the metal on copper oxide therefore results in the reduction of copper oxide to elemental copper followed by the oxidation of the metal. The interface is found to consist of a mixture of metal oxide and elemental copper. The 2.0 nm samples were annealed. These samples show the diffusion of copper oxide through the overlayer. The metal reacts with this diffusing oxide to form metallic oxide. The interface is found to consist of a mixture of unreacted metal, the metal oxide, and elemental copper. The amount of the unreacted metal varied between 0% and 40% and can be controlled by the processing conditions. The investigation shows room temperature chemical reactivity at the metal/ CuO interface and provides a new method of preparing sub-nano-oxide films.


2013 ◽  
Vol 125 (19) ◽  
pp. 5205-5209 ◽  
Author(s):  
Kumudu Mudiyanselage ◽  
Sanjaya D. Senanayake ◽  
Leticia Feria ◽  
Shankhamala Kundu ◽  
Ashleigh E. Baber ◽  
...  

2013 ◽  
Vol 52 (19) ◽  
pp. 5101-5105 ◽  
Author(s):  
Kumudu Mudiyanselage ◽  
Sanjaya D. Senanayake ◽  
Leticia Feria ◽  
Shankhamala Kundu ◽  
Ashleigh E. Baber ◽  
...  

2016 ◽  
Vol 24 (04) ◽  
pp. 1750042
Author(s):  
FEI WANG ◽  
FANG HU ◽  
XUE-AO ZHANG ◽  
HUI XU

Metal nanoparticles or nanoclusters have been widely used to functionalize semiconductor metal oxide nanostructures-based gas sensors or photodetectors to significantly enhance the device performance. It is crucial to reach a thorough understanding of the interfacial coupling between the metal nanoclusters and the metal oxide nanostructures. Here, in situ X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) have been used to investigate the interfacial interactions between metals (Au and Co) and molybdenum trioxide (MoO3) films. In spite of the high work function ([Formula: see text]6.8[Formula: see text]eV) of the thermally evaporated MoO3 films, only weak interaction is observed at the Au/MoO3 interface. Au clusters or films can remain their neutral and nonchemically reacted state on MoO3 film. In contrast, the interfacial chemical reaction between Co and MoO3 is significantly strong. A band-bending in MoO3 and two interface states have been observed at the Co/MoO3 interface.


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