Trap state passivation and photoactivation in wide band gap inorganic perovskite semiconductors

2018 ◽  
Vol 20 (39) ◽  
pp. 25476-25481 ◽  
Author(s):  
Shenglong Chu ◽  
Shusheng Pan ◽  
Guanghai Li
Keyword(s):  
Band Gap ◽  
Short Wavelength ◽  
Optoelectronic Devices ◽  
Wide Band ◽  
Promising Material ◽  
Trap State ◽  
Wide Band Gap ◽  
Inorganic Perovskite

CsPbCl3 is a promising material to construct future short wavelength optoelectronic devices based on inorganic perovskite semiconductors.

ScGaN and ScAlN: emerging nitride materials

2014 ◽  
Vol 2 (17) ◽  
pp. 6042-6050 ◽  
Author(s):  
M. A. Moram ◽  
S. Zhang
Keyword(s):  
Band Gap ◽  
Optoelectronic Devices ◽  
Wide Band ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Wide Band Gap ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Wide Band Gap Semiconductors ◽  
Energy Harvesting Devices

ScAlN and ScGaN alloys are wide band-gap semiconductors which can greatly expand the options for band gap and polarisation engineering required for efficient III-nitride optoelectronic devices, high-electron mobility transistors and energy-harvesting devices.

Wide band gap II–VI selenides for short wavelength intersubband devices

2009 ◽  
Vol 311 (7) ◽  
pp. 2109-2112 ◽  
Author(s):  
A. Shen ◽  
W.O. Charles ◽  
B.S. Li ◽  
K.J. Franz ◽  
C. Gmachl ◽  
...  
Keyword(s):  
Band Gap ◽  
Short Wavelength ◽  
Wide Band ◽  
Wide Band Gap

First-Principles Study of Tuning the Band Gap with Cr Doped BN Sheets

2015 ◽  
Vol 799-800 ◽  
pp. 171-174 ◽  
Author(s):  
Sheng Qian Ma ◽  
Feng Li
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Heavy Metal Contamination ◽  
Function Theory ◽  
Wide Band ◽  
Promising Material ◽  
Planar Geometry ◽  
Wide Band Gap ◽  
Highly Efficient ◽  
Photocatalytic Material

It is all known that the BN sheet is a nonmagnetic wide-band-gap semiconductor. Using Density Function Theory (DFT), the lattice parameters of Cr doped BN sheets were optimized, which were still kept on 2D planar geometry, and the band gap was studied. The simulation results show that the band gap is very easy to be tuned by Cr doped BN sheet, which is more stable structure. So Cr doped BN sheet is a promising material in modulating the band gap and through tuning the band gap it can be a highly efficient photocatalytic material et al. Because Cr is poisonous and harmful substance, it does harm to people’s health and environmental pollution, particularly, heavy metal contamination in soil. So Cr doped BN sheet is a promising material in modulating the band gap, through tuning the band gap it can be a highly efficient photocatalytic material and benefit humanity and protect the environment et al.

Wide Band Gap ZnO and ZnMgO Heterostructures for Future Optoelectronic Devices

2005 ◽  
pp. 301-330 ◽  
Author(s):  
R.D. Vispute ◽  
S. S. Hullavarad ◽  
D.E. Pugel ◽  
V. N. Kulkarni ◽  
S. Dhar ◽  
...  
Keyword(s):  
Band Gap ◽  
Optoelectronic Devices ◽  
Wide Band ◽  
Wide Band Gap

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Wide Band-Gap Kesterite Thin Films for Photovoltaic Applications

2018 ◽  
Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Photovoltaic Applications

Preparation and Characterization of Polyvinylidene Fluoride/ZrO2-TiO2 Optical Film with Wide Band Gap and High Refractive Index

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  
Keyword(s):  
Refractive Index ◽  
Band Gap ◽  
Polyvinylidene Fluoride ◽  
Wide Band ◽  
High Refractive Index ◽  
Wide Band Gap ◽  
Optical Film
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