Achieving ultrahigh carrier mobilities and opening the band gap in two-dimensional Si2BN

2018 ◽  
Vol 20 (33) ◽  
pp. 21716-21723 ◽  
Author(s):  
Deobrat Singh ◽  
Sanjeev K. Gupta ◽  
Yogesh Sonvane ◽  
Tanveer Hussain ◽  
Rajeev Ahuja
Keyword(s):  
Band Gap ◽  
Scientific Community ◽  
Carrier Mobility ◽  
Two Dimensional

Two-dimensional Si2BN material has been theoretically predicted that the superior carrier mobility. That's why we believe that it is a promising candidates for 2D electronics applications and has attracted interest in the scientific community for further research.

Penta-MX2 (M = Ni, Pd and Pt; X = P and As) monolayers: direct band-gap semiconductors with high carrier mobility

2019 ◽  
Vol 7 (12) ◽  
pp. 3569-3575 ◽  
Author(s):  
Shifeng Qian ◽  
Xiaowei Sheng ◽  
Xian Xu ◽  
Yuxiang Wu ◽  
Ning Lu ◽  
...  
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Ring Network ◽  
Direct Band Gap ◽  
Direct Band ◽  
High Carrier Mobility ◽  
High Carrier

Two-dimensional binary MX2 (M = Ni, Pd and Pt; X = P and As) exhibiting a beautiful pentagonal ring network is discussed through first principles calculations.

Investigation of strain behavior and carrier mobility of organic–inorganic hybrid perovskites: (C4H9NH3)2GeI4 and (C4H9NH3)2SnI4

Nanoscale ◽  
2020 ◽  
Vol 12 (44) ◽  
pp. 22551-22563
Author(s):  
Ye Su ◽  
Shuo Cao ◽  
Li-Bin Shi ◽  
Ping Qian
Keyword(s):  
Band Gap ◽  
Structural Stability ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
Inorganic Hybrid ◽  
Strain Behavior ◽  
Tunable Band Gap

Two dimensional (2D) organic–inorganic hybrid perovskites have attracted great interest due to their tunable band gap and structural stability.

B2N Monolayer: a Direct Band-Gap Semiconductor with High and Highly Anisotropic Carrier Mobility

Nanoscale ◽  
2021 ◽  
Author(s):  
Shuyi Lin ◽  
Yu Guo ◽  
Meiling Xu ◽  
Jijun Zhao ◽  
Yiwei Liang ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Planar Lattice ◽  
Direct Band Gap ◽  
Two Dimensional Materials ◽  
Direct Band

Two-dimensional materials with a planar lattice, a suitable direct band-gap, high and highly anisotropic carrier mobility are desirable for the development of advanced field-effect transistors. Here we predict three thermodynamically...

Highly efficient heterojunction solar cells enabled by edge-modified tellurene nanoribbons

2020 ◽  
Vol 22 (48) ◽  
pp. 28414-28422
Author(s):  
Yunzhi Gao ◽  
Kai Wu ◽  
Wei Hu ◽  
Jinlong Yang
Keyword(s):  
Solar Cells ◽  
Visible Light ◽  
Band Gap ◽  
Light Absorption ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
Visible Light Absorption ◽  
Heterojunction Solar Cells ◽  
High Carrier Mobility ◽  
High Carrier

Tellurene, a two-dimensional (2D) semiconductor, meets the requirements for optoelectronic applications with desirable properties, such as a suitable band gap, high carrier mobility, strong visible light absorption and high air stability.

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