scholarly journals Hexagonal Ti2B2 monolayer: a promising anode material offering high rate capability for Li-ion and Na-ion batteries

2018 ◽  
Vol 20 (34) ◽  
pp. 22168-22178 ◽  
Author(s):  
Tao Bo ◽  
Peng-Fei Liu ◽  
Juping Xu ◽  
Junrong Zhang ◽  
Yuanbo Chen ◽  
...  

Combining the first-principles density functional method and crystal structure prediction techniques, we report a series of hexagonal two-dimensional transition metal borides including Sc2B2, Ti2B2, V2B2, Cr2B2, Y2B2, Zr2B2, and Mo2B2.

RSC Advances ◽  
2021 ◽  
Vol 11 (24) ◽  
pp. 14495-14503
Author(s):  
Christopher N. Chervin ◽  
Ryan H. DeBlock ◽  
Joseph F. Parker ◽  
Bethany M. Hudak ◽  
Nathaniel L. Skeele ◽  
...  

Substituting electroinactive Al3+ into vanadium ferrite aerogels boosts capacity to battery-relevant levels but in a material that expresses pseudocapacitive character and high-rate performance.


2021 ◽  
Vol 9 (11) ◽  
pp. 7018-7024
Author(s):  
Takahiro Yoshinari ◽  
Datong Zhang ◽  
Kentaro Yamamoto ◽  
Yuya Kitaguchi ◽  
Aika Ochi ◽  
...  

A Cu–Au cathode material for all-solid-state fluoride-ion batteries with high rate-capability was designed as new concepts for electrochemical energy storage to handle the physicochemical energy density limit that Li-ion batteries are approaching.


2010 ◽  
Vol 146-147 ◽  
pp. 966-971
Author(s):  
Qi Hua Jiang ◽  
Hai Dong Zhang ◽  
Bin Xiang ◽  
Hai Yun He ◽  
Ping Deng

This work studies the aggregation of an synthetic ultraviolet absorbent, named 2-hydroxy-4-perfluoroheptanoate-benzophenone (HPFHBP), in the interface between two solvents which can not completely dissolve each other. The aggregation is studied by computer simulations based on a dynamic density functional method and mean-field interactions, which are implemented in the MesoDyn module and Blend module of Material Studios. The simulation results show that the synthetic ultraviolet absorbent diffuse to the interface phase and the concentration in the interface phase is greater than it in the solvents phase.


2015 ◽  
Vol 242 ◽  
pp. 434-439 ◽  
Author(s):  
Vasilii E. Gusakov

Within the framework of the density functional theory, the method was developed to calculate the band gap of semiconductors. We have evaluated the band gap for a number of monoatomic and diatomic semiconductors (Sn, Ge, Si, SiC, GaN, C, BN, AlN). The method gives the band gap of almost experimental accuracy. An important point is the fact that the developed method can be used to calculate both localized states (energy deep levels of defects in crystal), and electronic properties of nanostructures.


Sign in / Sign up

Export Citation Format

Share Document